Small Outline, 5 Lead, High
Speed Optocouplers
Technical Data
HCPL-M452
HCPL-M453
Features
• Surface Mountable
• Very Small, Low Profile
JEDEC Registered
Package Outline
• Compatible with Infrared
Vapor Phase Reflow and
Wave Soldering Processes
• Very High Common Mode
Transient Immunity:
15000 V/µs at VCM = 1500 V
Guaranteed (HCPL-M453)
• High Speed: 1 Mb/s
• TTL Compatible
• Guaranteed AC and DC
Performance over
Temperature: 0°C to 70°C
• Open Collector Output
• Recognized Under the
Component Program of
U.L. (File No. E55361) for
Dielectric Withstand Proof
Test Voltage of 3750 Vac, 1
Minute
• Lead Free Option
Description
These small outline high CMR,
high speed, diode-transistor opto-
couplers are single channel
devices in a five lead miniature
footprint. They are electrically
equivalent to the following Agilent
optocouplers:
SO-5 Package
Standard DIP
SO-8 Package
HCPL-M452
HCPL-M453
HCPL-4502
HCPL-4503
HCPL-0452
HCPL-0453
(Note: These devices equivalent to 6N135/6N136 devices but without the base lead.)
The SO-5 JEDEC registered
(MO-155) package outline does
not require “through holes” in a
PCB. This package occupies
approximately one-fourth the
footprint area of the standard
dual-in-line package. The lead
profile is designed to be
compatible with standard
surface mount processes.
These diode-transistor
optocouplers use an insulating
layer between the light emitting
diode and an integrated photon
detector to provide electrical
insulation between input and
output. Separate connections for
the photodiode bias and output
transistor collector increase the
speed up to a hundred times
CAUTION: The small device geometries inherent to the design of this bipolar component increase the component's
susceptibility to damage from electrostatic discharge (ESD). It is advised that normal static precautions be taken
in handling and assembly of this component to prevent damage and/or degradation which may be induced by
ESD.
2
over that of a conventional
photo-transistor coupler by
reducing the base-collector
capacitance.
The HCPL-M452 is designed for
high speed TTL/TTL applica-
tions. A standard 16 mA TTL
sink current through the input
LED will provide enough output
current for 1 TTL load and a
5.6 kΩ pull-up resistor. CTR of
the HCPL-M452 is 19%
minimum at IF = 16 mA.
The HCPL-M453 is an HCPL-
M452 with increased common
mode transient immunity of
15,000 V/µs minimum at
VCM = 1500 V guaranteed.
Outline Drawing (JEDEC MO-155)
Schematic
4.4 ± 0.1
(0.173 ± 0.004)
MXXX
XXX
7.0 ± 0.2
(0.276 ± 0.008)
ANODE
1
CATHODE
3
0.4 ± 0.05
(0.016 ± 0.002)
3.6 ± 0.1*
(0.142 ± 0.004)
2.5 ± 0.1
(0.098 ± 0.004)
0.102 ± 0.102
(0.004 ± 0.004)
1.27
(0.050)
BSC
0.71
(0.028)
MIN.
DIMENSIONS IN MILLIMETERS (INCHES)
* MAXIMUM MOLD FLASH ON EACH SIDE IS 0.15 mm (0.006)
NOTE: FLOATING LEAD PROTRUSION IS 0.15 mm (6 mils) MAX.
6
5
VCC
VOUT
4
GND
ANODE
CATHODE
IF
+
1
VF
–
3
SHIELD
ICC
6
VCC
IO
5
4
VO
GND
0.15 ± 0.025
(0.006 ± 0.001)
7° MAX.
MAX. LEAD COPLANARITY
= 0.102 (0.004)
Applications
• Line Receivers -
High common mode transient
immunity (>1000 V/µs) and
low input-output capacitance
(0.6 pF).
• High Speed Logic Ground
Isolation - TTL/TTL, TTL/
LTTL, TTL/CMOS, TTL/
LSTTL.
• Replace Slow Phototran-
sistor Optocouplers
• Replace Pulse
Transformers - Save board
space and weight
• Analog Signal Ground
Isolation -
Integrated photon detector
provides improved linearity
over phototransistor type.
Land Pattern Recommendation
4.4
(0.17)
8.27
(0.325)
2.5
(0.10)
2.0
(0.080)
1.3
(0.05)
0.64
(0.025)
DIMENSIONS IN MILLIMETERS AND (INCHES)
3
Absolute Maximum Ratings
(No Derating Required up to 85°C)
Storage Temperature ................................................. -55°C to +125°C
Operating Temperature ............................................. -55°C to +100°C
Average Input Current - IF ..................................................... 25 mA[1]
Peak Input Current - IF ........................................................... 50 mA[2]
(50% duty cycle, 1 ms pulse width)
Peak Transient Input Current - IF .............................................. 1.0 A
(≤1 µs pulse width, 300 pps)
Reverse Input Voltage - VR (Pin3-1) ............................................... 5 V
Input Power Dissipation ........................................................ 45 mW[3]
Average Output Current - IO (Pin 5) ........................................... 8 mA
Peak Output Current ................................................................. 16 mA
Output Voltage - VO (Pin 5-4) ........................................ -0.5 V to 20 V
Supply Voltage - VCC (Pin 6-4) ....................................... -0.5 V to 30 V
Output Power Dissipation .................................................... 100 mW[4]
Infrared and Vapor Phase Reflow Temperature .................. see below
Solder Reflow Thermal Profile
300
) 200
C
°
(
E
R
U
T
A
R
E
P
M
E
T
100
ROOM
TEMPERATURE
0
0
PREHEATING RATE 3°C + 1°C/–0.5°C/SEC.
REFLOW HEATING RATE 2.5°C ± 0.5°C/SEC.
PEAK
TEMP.
245°C
PEAK
TEMP.
240°C
PEAK
TEMP.
230°C
160°C
150°C
140°C
2.5°C ± 0.5°C/SEC.
3°C + 1°C/–0.5°C
PREHEATING TIME
150°C, 90 + 30 SEC.
SOLDERING
TIME
200°C
30
SEC.
30
SEC.
50 SEC.
50
100
150
200
250
TIME (SECONDS)
TIGHT
TYPICAL
LOOSE
Recommended Pb-Free IR Profile
tp
260 +0/-5 °C
TIME WITHIN 5 °C of ACTUAL
PEAK TEMPERATURE
20-40 SEC.
Tp
TL
217 °C
RAMP-UP
3 °C/SEC. MAX.
E
R
U
T
A
R
E
P
M
E
T
150 - 200 °C
Tsmax
Tsmin
ts
PREHEAT
60 to 180 SEC.
RAMP-DOWN
6 °C/SEC. MAX.
tL
60 to 150 SEC.
25
t 25 °C to PEAK
TIME
NOTES:
THE TIME FROM 25 °C to PEAK TEMPERATURE = 8 MINUTES MAX.
Tsmax = 200 °C, Tsmin = 150 °C
4
Conditions
Insulation Related Specifications
Parameter
Min External Air Gap
(Clearance)
Min. External Tracking Path
(Creepage)
Min. Internal Plastic Gap
(Clearance)
Tracking Resistance
Isolation Group (per DIN VDE 0109)
Value Units
≥ 5
Symbol
L(IO1)
L(IO2)
≥ 5
mm Measured from input terminals
to output terminals
mm Measured from input terminals
to output terminals
Through insulation distance
conductor to conductor
DIN IEC 112/VDE 0303 Part 1
Material Group DIN VDE 0109
CTI
0.08
mm
175
IIIa
V
Electrical Specifications
Over recommended temperature (TA = 0°C to 70°C) unless otherwise specified. (See note 11.)
Symbol Min. Typ.* Max. Units
Test Conditions
Fig. Note
CTR
VOL
IOH
ICCL
ICCH
VF
20
15
24
25
0.1
%
V
50
0.4
0.5
TA = 25°C VO = 0.4 V VCC = 4.5 V 1, 2,
4
IF = 16 mA
VO = 0.5 V
TA = 25°C IO = 3.0 mA
IO = 2.4 mA
0.003 0.5
0.01
1
50
200
50
0.02
1.5
1
2
1.7
1.8
µA TA = 25°C VO = VCC = 5.5 V
TA = 25°C VO = VCC = 15.0 V
IF = 0 mA
IF = 16 mA, VO = Open,
VCC = 15 V
TA = 25°C IF = 0 mA, VO = Open,
VCC = 15.0 V
V
TA = 25°C
IF = 16 mA
IR = 10 µA
7
3
BVR
5
∆VF/∆TA
-1.6
mV/°C IF = 16 mA
CIN
60
pF
f = 1 MHz, VF = 0
VISO
3750
VRMS RH ≤ 50%, t = 1 min., TA = 25°C
RI-O
CI-O
1012
0.6
Ω
VI-O = 500 VDC
pF
f = 1 MHz
5
11
11
6, 7
6
6
Parameter
Current
Transfer Ratio
Logic Low
Output
Voltage
Logic High
Output
Current
Logic Low
Supply
Current
Logic High
Supply
Current
Input Forward
Voltage
Input Reverse
Breakdown
Voltage
Temperature
Coefficient of
Forward
Voltage
Input
Capacitance
Input-Output
Insulation
Resistance
(Input-Output)
Capacitance
(Input-Output)
*All typicals at TA = 25°C.
5
Switching Specifications
Over recommended temperature (TA = 0°C to 70°C) VCC = 5 V, IF = 16 mA unless otherwise specified.
tPHL
tPLH
0.2
0.6
TA = 25°C
0.8
1.0
0.8
1.0
µs
TA = 25°C
Parameter Symbol Device Min. Typ.* Max. Units Test Conditions
Propagation
Delay Time
to Logic Low
at Output
Propagation
Delay Time
to Logic High
at Output
Common
Mode
Transient
Immunity at
Logic High
Level Output
Common
Mode
Transient
Immunity at
Logic Low
Level Output
Bandwidth
|CMH| HCPL-
M452
|CML| HCPL-
M452
kV/µs VCM = 10 Vp-p
VCM = 1500 Vp-p
VCM = 1500 Vp-p
VCM = 10 Vp-p
HCPL-
M453
HCPL-
M453
1
1
3
15
30
15
30
Fig. Note
5, 6,
RL = 1.9 kΩ 10
9
5, 6,
RL = 1.9 kΩ 10
9
11
8, 9
11
8, 9
IF = 0 mA
TA = 25°C
RL = 1.9 kΩ
IF = 16 mA
TA = 25°C
RL = 1.9 kΩ
MHz RL = 100 Ω, See Test Circuit 8, 9
10
BW
All typicals at TA = 25°C.
Notes:
1. Derate linearly above 85°C free-air temperature at a rate of 0.5 mA/°C.
2. Derate linearly above 85°C free-air temperature at a rate of 1.0 mA/°C.
3. Derate linearly above 85°C free-air temperature at a rate of 1.1 mW/°C.
4. Derate linearly above 85°C free-air temperature at a rate of 2.3 mW/°C.
5. CURRENT TRANSFER RATIO in percent is defined as the ratio of output collector current, IO, to the forward LED input
current, IF, times 100.
6. Device considered a two terminal device: pins 1 and 3 shorted together, and pins 4, 5 and 6 shorted together.
7. In accordance with UL 1577, each optocoupler is proof tested by applying an insulation test voltage ≥ 4500 VRMS for 1 second
(leakage detection current limit, II-O ≤ 5 µA).
8. Common transient immunity in a Logic High level is the maximum tolerable (positive) dVCM/dt on the rising edge of the
common mode pulse, VCM, to assure that the output will remain in a Logic High state (i.e., VO > 2.0 V). Common mode
transient immunity in a Logic Low level is the maximum tolerable (negative) dVCM/dt on the falling edge of the common mode
pulse signal, VCM to assure that the output will remain in a Logic Low state (i.e., VO < 0.8 V).
9. The 1.9 kΩ load represents 1 TTL unit load of 1.6 mA and the 5.6 kΩ pull-up resistor.
10. The frequency at which the ac output voltage is 3 dB below its mid-frequency value.
11. Use of a 0.1 µF bypass capacitor connected between pins 4 and 6 is recommended.
6
A
m
–
T
N
E
R
R
U
C
D
R
A
W
R
O
F
–
F
TA = 25°C
IF
+
VF
–
1000
100
10
1.0
0.1
0.01
I
0.001
1.10
100
1.20
1.30
1.40
1.50
1.60
1.5
1.0
0.5
0.1
0
1
NORMALIZED
I = 16 mA
F
V = 0.4 V
O
V = 5 V
CC
T = 25°C
A
10
I
O
T
A
R
R
E
F
S
N
A
R
T
T
N
E
R
R
U
C
D
E
Z
L
A
M
R
O
N
I
A
m
–
T
N
E
R
R
U
C
T
U
P
T
U
O
–
O
I
10
T = 25°C
A
V = 5.0 V
CC
5
0
0
40 mA
35 mA
30 mA
25 mA
20 mA
15 mA
10 mA
I = 5 mA
F
10
20
VO – OUTPUT VOLTAGE – V
IF – INPUT CURRENT – mA
VF – FORWARD VOLTAGE – VOLTS
Figure 1. dc and Pulsed Transfer
Characteristics.
Figure 2. Current Transfer Ratio vs.
Input Current.
Figure 3. Input Current vs. Forward
Voltage.
I
O
T
A
R
R
E
F
S
N
A
R
T
T
N
E
R
R
U
C
D
E
Z
L
A
M
R
O
N
I
1.1
1.0
0.9
0.8
0.7
NORMALIZED
I = 16 mA
F
V = 0.4 V
O
V = 5 V
CC
T = 25°C
A
2000
1500
1000
500
IF = 16 mA, VCC = 5.0 V
RL = 1.9 kΩ
tPLH
tPHL
I
s
n
–
Y
A
L
E
D
N
O
T
A
G
A
P
O
R
P
–
P
t
0.6
-60
-20
20
60
100
140
0
-60
-20
20
60
100
TA – TEMPERATURE – °C
TA – TEMPERATURE – °C
I
s
µ
–
Y
A
L
E
D
N
O
T
A
G
A
P
O
R
P
–
P
t
3.0
2.0
1.0
0.8
0.6
0.4
0.2
0.1
1
IF = 10 mA
IF = 16 mA
VCC = 5.0 V
T = 25 °C
A
tPLH
tPHL
2
3
8765
RL – LOAD RESISTANCE – kΩ
4
9 10
Figure 4. Current Transfer Ratio vs.
Temperature.
Figure 5. Propagation Delay vs.
Temperature.
Figure 6. Propagation Delay Time
vs. Load Resistance.
A
n
–
T
N
E
R
R
U
C
T
U
P
T
U
O
H
G
H
C
G
O
L
–
H
O
I
I
I
10+4
10+3
10+2
10+1
10 0
10 -1
10-2
IF = 0
VO = VCC = 5.0 V
-50
-25
0
+25
+50
+75 +100
TA – TEMPERATURE – °C
I
O
T
A
R
R
E
F
S
N
A
R
T
T
N
E
R
R
U
C
L
A
N
G
S
L
L
A
M
S
–
I
TA = 25°C, RL = 100 Ω, VCC = 5 V
0.30
0.20
0.10
0
0
4
8
12
16
25
IF – QUIESCENT INPUT CURRENT – mA
O
F
I
I
∆
∆
Figure 7. Logic High Output
Current vs. Temperature.
Figure 8. Small-Signal Current
Transfer Ratio vs. Quiescent Input
Current.
7
TA = 25°C
IF = 16 mA
RL = 100 Ω
RL = 220 Ω
RL = 470 Ω
RL = 1 kΩ
0
-5
-10
-15
-20
-25
-30
0.01
0.1
1.0
10
f – FREQUENCY – MHz
B
d
–
E
S
N
O
P
S
E
R
D
E
Z
L
A
M
R
O
N
I
6
5
4
RL
+5 V
VO
0.1 µF
+5 V
SET IF
20 kΩ
AC INPUT
2N3063
0.1 µF
500 Ω
100 Ω
1
3
1.5 V dc
0.25 Vp-p ac
Figure 9. Frequency Response.
IF
0
VO
tPHL
IF
PULSE
GEN.
ZO = 50 Ω
tr = 5 ns
5 V
10% DUTY CYCLE
1/f 100 µs
1.5 V
1.5 V
VOL
tPLH
IF MONITOR
100 Ω
Figure 10. Switching Test Circuit.
VCM
0 V
10 V
10%
tr
tr, tf = 16 ns
90% 90%
10%
tf
VO
VO
SWITCH AT A: I = 0 mA
F
SWITCH AT B: I = 1.6 mA
F
5 V
VOL
IF
VFF
1
3
B
A
1
3
+5 V
VO
RL
0.1µF
CL = 15 pF
RCC (SEE NOTE 10)
220 Ω
RL
0.1µF
VCC
VO
6
5
4
6
5
4
VCM
+
–
PULSE GEN.
Figure 11. Test Circuit for Transient Immunity and Typical Waveforms.
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Data subject to change.
Copyright © 2004 Agilent Technologies, Inc.
Obsoletes 5989-0792EN
December 28, 2004
5989-2117EN