TB6612FNG-EN(TB6612FNG_datasheet

Toshiba Bi-CD Integrated Circuit Silicon Monolithic TB6612FNG TB6612FNG Driver IC for Dual DC motor TB6612FNG is a driver IC for DC motor with output transistor in LD MOS structure with low ON-resistor. Two input signals, IN1 and IN2, can choose one of four modes such as CW, CCW, short brake, and stop mode. Features • Power supply voltage: VM = 15 V(Max) • Output current: IOUT = 1.2 A(ave)/3.2 A (peak) • Output low ON resistor: 0.5Ω (upper+lower Typ. @ VM ≥ 5 V) • Standby (Power save) system • CW/CCW/short brake/stop function modes • Built-in thermal shutdown circuit and low voltage detecting circuit • Small faced package(SSOP24: 0.65 mm Lead pitch) * This product has a MOS structure and is sensitive to electrostatic discharge. When handling this product, Weight: 0.14 g (typ.) ensure that the environment is protected against electrostatic discharge by using an earth strap, a conductive mat and an ionizer. Ensure also that the ambient temperature and relative humidity are maintained at reasonable levels. © 2014 TOSHIBA Corporation 1 2014-10-01

Block Diagram TB6612FNG Pin Functions Pin Name No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 AO1 AO1 PGND1 PGND1 AO2 AO2 BO2 BO2 PGND2 PGND2 BO1 BO1 VM2 VM3 PWMB BIN2 BIN1 GND STBY Vcc AIN1 AIN2 PWMA VM1 Function I/O O ch A output 1 ― Power GND 1 O O ch A output 2 ch B output 2 ― Power GND 2 O ch B output 1 ― I I I ― I ― I I I ― Motor supply ch B PWM input/200 kΩ pull-down at internal ch B input 2/200 kΩ pull-down at internal ch B input 1/200 kΩ pull-down at internal Small signal GND “L” = standby/200 kΩ pull-down at internal Small signal supply ch A input 1/200 kΩ pull-down at internal ch A input 2/200 kΩ pull-down at internal ch A PWM input/200 kΩ pull-down at internal Motor supply 2 2014-10-01

Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Remarks TB6612FNG Supply voltage Input voltage Output voltage Output current VM VCC VIN VOUT IOUT IOUT (peak) Power dissipation Operating temperature Storage temperature PD Topr Tstg Operating Range (Ta = -20 to 85°C) 15 6 -0.2 to 6 15 1.2 2 3.2 0.78 0.89 1.36 -20 to 85 -55 to 150 V V V A W °C °C IN1,IN2,STBY,PWM pins O1,O2 pins Per 1 ch tw = 20 ms Continuous pulse, Duty ≤ 20% tw = 10 ms Single pulse IC only 50 mm × 50 mm t = 1.6 mm Cu ≥ 40% in PCB mounting 76.2 mm × 114.3 mm t = 1.6 mm Cu ≥ 30% in PCB mounting Characteristics Symbol Min Typ. Supply voltage Output current (H-SW) VCC VM IOUT Switching frequency fPWM 2.7 2.5 ― ― ― 3 5 ― ― ― Max 5.5 13.5 1.0 0.4 100 Unit Remarks V V A kHz VM ≥ 4.5 V 4.5 V > VM ≥ 2.5 V Without PWM Operation Input pin: 入力端子; IN1,IN2,PWM,STBY Output pin: O1, O2 出力端子; O1,O2 Input Vcc 200kΩ GND Internal circuit VM VM O1 O2 O1 O2 PGND 3 2014-10-01

TB6612FNG H-SW Control Function Input IN1 IN2 PWM STBY OUT1 OUT2 H L H L H H L L H/L H L H L H H/L H/L H/L H H H H H H L L L L H L L H L L L OFF (High impedance) OFF (High impedance) Output Mode Short brake CCW Short brake CW Short brake Stop Standby VM VM M OUT2 GND t3 GND GND VM OUT2 OUT1 M OUT1 M OUT2 OUT1 t2 t1 H-SW Operating Description ・To prevent penetrating current, dead time t2 and t4 is provided in switching to each mode in the IC. Voltage wave t4 t5 t2 t4 OUT2 OUT1 M OUT2 OUT1 M t1 t5 GND VM OUT1 VM VM GND GND t3 4 2014-10-01

Electrical Characteristics (unless otherwise specified, Ta = 25°C, Vcc = 3 V, VM = 5 V) TB6612FNG Characteristics Supply current Control input voltage Control input current Standby input voltage Standby input current Output saturating voltage Output leakage current Regenerative diode VF Low voltage detecting voltage Recovering voltage Response speed Symbol ICC(3 V) ICC(5.5 V) ICC(STB) IM(STB) VIH VIL IIH IIL VIH(STB) VIL(STB) IIH(STB) IIL(STB) Vsat(U+L)1 Vsat(U+L)2 IL(U) IL(L) VF(U) VF(L) UVLD UVLC tr tf Test Condition STBY = Vcc = 3 V, VM = 5 V STBY = Vcc = 5.5 V, VM = 5 V STBY = 0 V ― VIN = 3 V VIN = 0 V ― VIN = 3 V VIN = 0 V IO = 1 A, Vcc = VM = 5 V IO = 0.3 A, Vcc = VM = 5 V VM = VOUT = 15 V VM = 15 V, VOUT = 0 V IF = 1A (Design target only) (Design target only) Dead time H to L Penetration protect time L to H (Design target only) Thermal shutdown circuit operating temperature Thermal shutdown hysteresis TSD ∆TSD (Design target only) Min ― ― ― ― Vcc×0.7 -0.2 5 ― Vcc×0.7 -0.2 5 ― ― ― ― -1 ― ― ― ― ― ― ― ― ― ― Typ. 1.1 1.5 ― ― ― ― 15 ― ― ― 15 ― 0.5 0.15 ― ― 1 1 1.9 2.2 24 41 50 230 175 20 Max Unit 1.8 2.2 1 1 Vcc+0.2 Vcc×0.3 25 1 Vcc+0.2 Vcc×0.3 25 1 0.7 0.21 1 ― 1.1 1.1 ― ― ― ― ― ― ― ― mA μA V μA V μA V μA V V ns °C 5 2014-10-01

D P n o i t a p s s d r e w o P i i ③ ② (w) 1.50 1.00 Target characteristics 0.00 0.50 ① 50 TB6612FNG Iout - Duty IOUT - Duty Dual-channel operation 2ch動作時 2 ch driving Single-channel operation 1 ch driving 1ch動作時 Ta = 25°C, IC only Ta = 25°C, IC only Ta=25℃,IC単体 100% PD - Ta PD - Ta ①IC only θj – a = 160°C/W ①IC単体θj-a=160℃/W ②基板実装時 ②In boarding PCB面積 50×50×1.6mm PCB area 50 mm×50 mm×1.6 mm Cu箔面積≧40% Cu area ≥ 40% ③基板実装時 ③In boarding PCB面積 76.2×114.3×1.6mm PCB area 76.2 mm×114.3 mm×1.6 mm Cu箔面積≧30% Cu area ≥ 30% (A) 2.5 T U O I t n e r r u c t u p t u O 2.0 1.5 1.0 0.5 0.0 0 100 Ta (℃) 150 0% 20% 40% 60% 80% Duty 6 2014-10-01

10uF M C U TB6612FNG C2 + C1 0.1uF 10uF +4.5 V +4.5V to 13.5 V ～13.5V UVLO STBY Control Logic A H-SW Driver A TSD Control Logic B H-SW Driver B VM1 AO1 AO1 AO2 AO2 PGND1 PGND1 VM2 VM3 BO1 BO1 BO2 BO2 PGND2 PGND2 24 1 2 5 6 3 4 13 14 11 12 7 8 9 10 M M BIN2 PWMB GND AIN2 Vcc STBY PWMA 23 17 16 15 18 BIN1 AIN1 21 22 20 19 + C3 C4 0.1uF Typical Application Diagram +2.7 V +2.7V to 5.5 V ～5.5V Note: Condensers for noise absorption (C1, C2, C3, and C4) should be connected as close as possible to the IC. 7 2014-10-01

Package Dimennsions TB6612FNG Weght: 0.14 g (typ) Detail of a terminal 8 2014-10-01

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