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Contents
FEATURES
GENERAL DESCRIPTION
PIN CONFIGURATIONS
PIN DESCRIPTION
BLOCK DIAGRAM
DATA PROTECTION
HOLD FEATURE
DEVICE OPERATION
COMMAND DESCRIPTION
POWER-ON STATE
ELECTRICAL SPECIFICATIONS
RECOMMENDED OPERATING CONDITIONS
ERASE AND PROGRAMMING PERFORMANCE
LATCH-UP CHARACTERISTICS
ORDERING INFORMATION
PART NAME DESCRIPTION
PACKAGE INFORMATION
MX25L3205 Macronix NBitTM Memory Family 32M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY FEATURES GENERAL • Serial Peripheral Interface (SPI) compatible -- Mode 0 and Mode 3 33,554,432 x 1 bit structure 64 Equal Sectors with 64K byte each - Any sector can be erased Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations Latch-up protected to 100mA from -1V to Vcc +1V Low Vcc write inhibit is from 1.5V to 2.5V PERFORMANCE High Performance - Fast access time: 50MHz serial clock (30pF + 1TTL Load) - Fast program time: 3ms/page (typical, 256-byte per page) - Fast erase time: 1s/sector (typical, 64K-byte per sector) and 64s/chip (typical) - Acceleration mode: - Program time: 2.4ms/page (typical) - Erase time: 0.8s/sector (typical) and 51s/chip (typical) Low Power Consumption - Low active read current: 30mA (max.) at 50MHz - Low active programming current: 30mA (max.) - Low active erase current: 38mA (max.) - Low standby current: 50uA (max.) - Deep power-down mode 1uA (typical) Minimum 10K erase/program cycle for array Minimum 100K erase/program cycle for additional 4Kb SOFTWARE FEATURES Input Data Format - 1-byte Command code Auto Erase and Auto Program Algorithm - Automatically erases and verifies data at selected sector - Automatically programs and verifies data at selected page by an internal algorithm that automatically times the program pulse widths (Any page to be programed should have page in the erased state first) • Status Register Feature Electronic Identification - JEDEC 2-byte Device ID - RES command, 1-byte Device ID - REMS command, ADD=00H will output the manufacturer's ID first and ADD=01H will output device ID first Additional 4Kb sector independent from main memory for parameter storage to eliminate EEPROM from system HARDWARE FEATURES SCLK Input - Serial clock input SI Input - Serial Data Input SO/PO7 - Serial Data Output or Parallel mode Data output/input WP#/ACC Pin - Hardware write protection and Program/erase accel- eration HOLD# pin - pause the chip without diselecting the chip (not for paralled mode, please connect HOLD# pin to VCC dur- ing parallel mode) PO0~PO6 - for parallel mode data output/input PACKAGE - 16-pin SOP (300mil) P/N: PM1169 1 REV. 1.0, JUL. 15, 2005
MX25L3205 GENERAL DESCRIPTION The MX25L3205 is a CMOS 33,554,432 bit serial eLiteFlashTM Memory, which is configured as 4,194,304 x 8 internally. The MX25L3205 features a serial peripheral interface and software protocol allowing operation on a simple 3- wire bus. The three bus signals are a clock input (SCLK), a serial data input (SI), and a serial data output (SO). SPI access to the device is enabled by CS# input. The MX25L3205 provide sequential read operation on whole chip. User may start to read from any byte of the array. While the end of the array is reached, the device will wrap around to the beginning of the array and continuously outputs data until CS# goes high. After program/erase command is issued, auto program/ erase algorithms which program/erase and verify the specified page locations will be executed. Program com- mand is executed on a page (256 bytes) basis, and erase command is executed on both chip and sector (64K bytes) basis. To provide user with ease of interface, a status register is included to indicate the status of the chip. The status read command can be issued to detect completion and error flag status of a program or erase operation. To increase user's factory throughputs, a parallel mode is provided. The performance of read/program is dramatically improved than serial mode on programmer machine. When the device is not in operation and CS# is high, it is put in standby mode and draws less than 50uA DC current. The additional 4Kb sector with 100K erase/program endur- ance cycles is suitable for parameter storage and replaces the EEPROM on system. The MX25L3205 utilizes MXIC's proprietary memory cell which reliably stores memory contents even after 10K program and erase cycles. PIN CONFIGURATIONS PIN DESCRIPTION 16-PIN SOP (300 mil) HOLD# VCC NC PO2 PO1 PO0 CS# SO/PO7 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 SCLK SI PO6 PO5 PO4 PO3 GND WP#/ACC SYMBOL CS# SI SO/PO7(1) Serial Data Output or Parallel Data DESCRIPTION Chip Select Serial Data Input output/input Clock Input SCLK HOLD#(2) Hold, to pause the serial communication (HOLD# is not for parallel mode) WP#/ACC Write Protection: connect to GND; 12V for program/erase acceleration: connect to 12V + 3.3V Power Supply Ground VCC GND PO0~PO6 Parallel data output/input (PO0~PO6 can NC be connected to NC in serial mode) No Internal Connection Note: 1. PO0~PO7 are not provided on 8-LAND SON package. 2. HOLD# is recommended to connect to VCC during parallel mode. P/N: PM1169 2 REV. 1.0, JUL. 15, 2005
BLOCK DIAGRAM MX25L3205 Address Generator Memory Array - X D e c o d e r a d d i t i o n a l 4 K b SI Data Register Y-Decoder SRAM Buffer CS#, ACC, WP#,HOLD# Mode Logic State Machine HV Generator SCLK Clock Generator Sense Amplifier Output Buffer SO P/N: PM1169 3 REV. 1.0, JUL. 15, 2005
MX25L3205 To avoid unexpected changes by system power supply transition, the Power-On Reset and an internal timer (tPUW) can protect the device. Before the Program, Erase, and Write Status Register execution, instruction length will be checked on follow- ing the clock pulse number to be multiple of eight base. Write Enable (WREN) instruction must set to Write Enable Latch (WEL) bit before writing other instructions to modify data. The WEL bit will return to reset state by following situations: - Power-up - Write Disable (WRDI) instruction completion - Write Status Register (WRSR) instruction completion - Page Program (PP) instruction completion - Sector Erase (SE) instruction completion - Chip Erase (CE) instruction completion The Software Protected Mode (SPM) use (BP2, BP1, BP0) bits to allow part of memory to be protected as read only. The Hardware Protected Mode (HPM) use WP# to protect the (BP2, BP1, BP0) bits and SRWD bit. Deep-Power Down Mode also protects the device by ignoring all instructions except Release from Deep- Power Down (RDP) instruction and RES instruction. DATA PROTECTION The MX25L3205 are designed to offer protection against accidental erasure or programming caused by spurious system level signals that may exist during power transition. During power up the device automatically resets the state machine in the Read mode. In addition, with its control register architecture, alteration of the memory contents only occurs after successful completion of specific command sequences. The device also incorporates several features to prevent inadvertent write cycles resulting from VCC power-up and power-down transition or system noise. Power-On Reset and an internal timer (tPUW) can provide protection against inadvertant changes while the power supply is outside the operating specification. Program, Erase and Write Status Register instructions are checked that they consist of a number of clock pulses that is a multiple of eight, before they are accepted for execution. All instructions that modify data must be preceded by a Write Enable (WREN) instruction to set the Write Enable Latch (WEL) bit . This bit is returned to its reset state by the following events: - Power-up - Write Disable (WRDI) instruction completion - Write Status Register (WRSR) instruction completion - Page Program (PP) instruction completion - Sector Erase (SE) instruction completion - Chip Erase (CE) instruction completion The Block Protect (BP2, BP1, BP0) bits allow part of the memory to be configured as readonly. This is the Software Protected Mode (SPM). The Write Protect (WP#) signal allows the Block Protect (BP2, BP1, BP0) bits and Status Register Write Disable (SRWD) bit to be protected. This is the Hardware Protected Mode (HPM). In addition to the low power consumption feature, the Deep Power-down mode offers extra software protec- tion from inadvertent Write, Program and Erase in- structions, as all instructions are ignored except one particular instruction (the Release from Deep Powerdown instruction). P/N: PM1169 4 REV. 1.0, JUL. 15, 2005
MX25L3205 Table 1. Protected Area Sizes Status bit BP2 BP1 BP0 0 0 0 0 1 1 1 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 Protection Area 32Mb None Upper 64th (Sector 63) Upper 32nd (two sectors: 62 and 63) Upper sixteenth (four sectors: 60 to 63) Upper eighth (eight sectors: 56 to 63) Upper quarter (sixteen sectors: 48 to 63) Upper half (thirty-two sectors: 32 to 63) All Note: 1. The device is ready to accept a Chip Erase instruction if, and only if, all Block Protect (BP2, BP1, BP0) are 0. P/N: PM1169 5 REV. 1.0, JUL. 15, 2005
MX25L3205 HOLD FEATURE HOLD# pin signal goes low to hold any serial communications with the device. The HOLD feature will not stop the operation of write status register, programming, or erasing in progress. The operation of HOLD requires Chip Select(CS#) keeping low and starts on falling edge of HOLD# pin signal while Serial Clock (SCLK) signal is being low (if Serial Clock signal is not being low, HOLD operation will not start until Serial Clock signal being low). The HOLD condition ends on the rising edge of HOLD# pin signal while Serial Clock(SCLK) signal is being low( if Serial Clock signal is not being low, HOLD operation will not end until Serial Clock being low), see Figure 1. Figure 1. Hold Condition Operation SCLK HOLD# Hold Condition (standard use) Hold Condition (non-standard use) The Serial Data Output (SO) is high impedance, both Serial Data Input (SI) and Serial Clock (SCLK) are don't care during the HOLD operation. If Chip Select (CS#) signal goes high during HOLD operation, it has the effect on resetting the internal logic of the device. It is necessary to drive HOLD# signal to high, and then to drive CS# to low for restarting communication with the device. The HOLD operation is not recommended to use during parallel mode. PROGRAM/ERASE ACCELERATION To activate the program/erase acceleration function requires ACC pin connecting to 12V voltage (see Figure 2), and then to be followed by the normal program/erase process. By utilizing the program/erase acceleration operation, the performances are improved as shown on table of "ERASE AND PROGRAM PERFORMACE". Figure 2. ACCELERATED PROGRAM TIMING DIAGRAM VHH 12V VIL or VIH ACC tVHH Note: tVHH (VHH Rise and Fall Time) min. 250ns VIL or VIH tVHH P/N: PM1169 6 REV. 1.0, JUL. 15, 2005
Table 2. COMMAND DEFINITION MX25L3205 COMMAND WREN (write (byte) Enable) 06 Hex WRDI (write disable) 04 Hex RDID (read ident- ification) 9F Hex READ WRSR RDSR (read status (write status (read data) (fast read Mode register) 05 Hex register) 01 Hex Fast Read Parallel 55 Hex 03 Hex AD1 AD2 AD3 data) 0B Hex AD1 AD2 AD3 x 1st 2nd 3rd 4th 5th Action sets the (WEL) write enable latch bit to read out the status reset the output the (WEL) write enable latch bit manufacturer ID and 2-byte register device ID to write new n bytes values to the read out status register until CS# goes high Enter and stay in Parallel Mode until power off COMMAND SE (byte) CE (Chip PP (Page DP (Deep EN4K (Enter (Sector Erase) Erase) Program) Power 4Kb RDP (Release from Deep EX4K (Exit 4Kb sector) Power-down) RES(Read REMS (Read Electronic Electronic ID) Manufacturer & Device ID) 90 Hex Down) sector) B9 Hex A5 Hex B5 Hex AB Hex 60 or 20 or D8 Hex C7 Hex AD1 AD2 AD3 02 Hex AD1 AD2 AD3 1st 2nd 3rd 4th 5th Action AB Hex x x x x x ADD (1) Output the manufacturer ID and device ID Exit the Enter the additional additional 4Kb sector 4Kb sector (1) ADD=00H will output the manufacturer's ID first and ADD=01H will output device ID first P/N: PM1169 7 REV. 1.0, JUL. 15, 2005
Table 3. Memory Organization MX25L3205 Sector Address Range 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 3F0000h 3E0000h 3D0000h 3C0000h 3B0000h 3A0000h 390000h 380000h 370000h 360000h 350000h 340000h 330000h 320000h 310000h 300000h 2F0000h 2E0000h 2D0000h 2C0000h 2B0000h 2A0000h 290000h 280000h 270000h 260000h 250000h 240000h 230000h 220000h 210000h 200000h 3FFFFFh 3EFFFFh 3DFFFFh 3CFFFFh 3BFFFFh 3AFFFFh 39FFFFh 38FFFFh 37FFFFh 36FFFFh 35FFFFh 34FFFFh 33FFFFh 32FFFFh 31FFFFh 30FFFFh 2FFFFFh 2EFFFFh 2DFFFFh 2CFFFFh 2BFFFFh 2AFFFFh 29FFFFh 28FFFFh 27FFFFh 26FFFFh 25FFFFh 24FFFFh 23FFFFh 22FFFFh 21FFFFh 20FFFFh Sector Address Range 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 1F0000h 1E0000h 1D0000h 1C0000h 1B0000h 1A0000h 190000h 180000h 170000h 160000h 150000h 140000h 130000h 120000h 110000h 100000h 0F0000h 0E0000h 0D0000h 0C0000h 0B0000h 0A0000h 090000h 080000h 070000h 060000h 050000h 040000h 030000h 020000h 010000h 000000h 1FFFFFh 1EFFFFh 1DFFFFh 1CFFFFh 1BFFFFh 1AFFFFh 19FFFFh 18FFFFh 17FFFFh 16FFFFh 15FFFFh 14FFFFh 13FFFFh 12FFFFh 11FFFFh 10FFFFh 0FFFFFh 0EFFFFh 0DFFFFh 0CFFFFh 0BFFFFh 0AFFFFh 09FFFFh 08FFFFh 07FFFFh 06FFFFh 05FFFFh 04FFFFh 03FFFFh 02FFFFh 01FFFFh 00FFFFh P/N: PM1169 8 REV. 1.0, JUL. 15, 2005
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