September 2002 B S S 1 3 8 BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features • 0.22 A, 50 V. RDS(ON) = 3.5Ω @ VGS = 10 V RDS(ON) = 6.0Ω @ VGS = 4.5 V • High density cell design for extremely low RDS(ON) • Rugged and Reliable • Compact industry standard SOT-23 surface mount package D D SOT-23 G S – Pulsed Parameter Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous Maximum Power Dissipation Derate Above 25°C Operating and Storage Junction Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16” from Case for 10 Seconds TJ, TSTG TL Thermal Characteristics RθJA Package Marking and Ordering Information Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1) (Note 1) Device Marking SS Device BSS138 Reel Size 7’’ G S Ratings Units 50 ±20 0.22 0.88 0.36 2.8 −55 to +150 300 350 V V A W mW/°C °C °C °C/W Tape width 8mm Quantity 3000 units 2002 Fairchild Semiconductor Corporation BSS138 Rev B(W) 

TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units B S S 1 3 8 Parameter Electrical Characteristics Symbol Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance (Note 2) ID = 250 µA Drain–Source Breakdown Voltage VGS = 0 V, Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage. ID = 250 µA,Referenced to 25°C VDS = 50 V, VDS = 50 V, VGS = 0 V TJ = 125°C VDS = 30 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VGS = 0 V ID = 1 mA VDS = VGS, ID = 1 mA,Referenced to 25°C VGS = 10 V, VGS = 4.5 V, VGS = 10 V, ID = 0.22 A, TJ = 125°C VGS = 10 V, VDS = 10V, VDS = 5 V ID = 0.22 A ID = 0.22 A ID = 0.22 A 50 0.8 0.2 0.12 72 1.3 –2 0.7 1.0 1.1 0.5 27 13 6 9 2.5 9 20 7 1.7 0.1 0.4 0.8 0.5 5 100 ±100 1.6 3.5 6.0 5.8 5 18 36 14 2.4 0.22 1.4 V mV/°C µA µA nA nA V mV/°C Ω A S pF pF pF Ω ns ns ns ns nC nC nC A V V GS = 0 V, VGS = 15 mV, VDS = 25 V, f = 1.0 MHz On–State Drain Current Forward Transconductance ID(on) gFS Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics (Note 2) td(on) tr td(off) tf Qg Qgs Qgd Drain–Source Diode Characteristics and Maximum Ratings IS VSD Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage VDS = 25 V, VGS = 10 V ID = 0.29 A, RGEN = 6 Ω VDD = 30 V, VGS = 10 V, ID = 0.22 A, f = 1.0 MHz VGS = 0 V, IS = 0.44 A(Note 2) Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 350°C/W when mounted on a minimum pad.. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% BSS138 Rev B(W) 

Typical Characteristics VGS = 10V 6.0V 4.5V 3.5V 3.0V 2.5V 2.0V ) A ( T N E R R U C N A R D I , D I 1 0.8 0.6 0.4 0.2 0 0 B S S 1 3 8 3.4 3 2.6 2.2 1.8 1.4 1 0.6 VGS = 2.5V 3.0V 3.5V 4.0V 4.5V 6.0V 10V I D E Z L A M R O N , ) N O S D R ( I - E C N A T S S E R N O E C R U O S N A R D - I 0.5 1 1.5 2 2.5 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 125 150 0 2 1.8 1.6 1.4 1.2 1 0.8 0.6 ID = 220mA VGS = 10V -50 -25 25 0 100 TJ, JUNCTION TEMPERATURE (oC) 50 75 Figure 3. On-Resistance Variation with Temperature. 0.6 0.5 0.4 0.3 0.2 0.1 0 0.5 VDS = 10V TA = -55oC 25oC 125oC 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. I D E Z L A M R O N , ) N O S D R ( I - E C N A T S S E R N O E C R U O S N A R D - I ) A ( T N E R R U C N A R D I , D I ) M H O ( E C N A T S S E R N O - I , ) ( N O S D R ID = 110mA TA = 125oC 4.1 3.5 2.9 2.3 1.7 1.1 0.5 TA = 25oC 2 8 VGS, GATE TO SOURCE VOLTAGE (V) 4 6 10 1.2 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. VGS = 0V TA = 125oC 1 0.1 0.01 0.001 25oC -55oC ) A I ( T N E R R U C N A R D E S R E V E R , S I 0.0001 0 0.4 0.2 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 0.6 0.8 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. BSS138 Rev B(W) 

Typical Characteristics ID = 220mA VDS = 8V 25V 30V ) V ( E G A T L O V E C R U O S E T A G - , S G V 10 8 6 4 2 0 0 0.2 0.4 0.8 0.6 1.2 Qg, GATE CHARGE (nC) 1 CRSS 0 0 1.4 1.6 1.8 10 20 30 40 50 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. B S S 1 3 8 f = 1 MHz VGS = 0 V 100 80 60 40 20 CISS COSS ) F p ( I E C N A T C A P A C ) W ( I R E W O P T N E S N A R T K A E P , ) k p ( P 5 4 3 2 1 0 0.001 SINGLE PULSE RθJA = 350°C/W TA = 25°C 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 10. Single Pulse Maximum Power Dissipation. RθJA(t) = r(t) * RθJA RθJA = 350oC/W P(pk) t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 ) A ( T N E R R U C N A R D I , D I 10 1 0.1 0.01 0.001 0.1 RDS(ON) LIMIT 100µs 1ms 10ms 100ms 1s DC VGS = 10V SINGLE PULSE RθJA = 350oC/W TA = 25oC 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 Figure 9. Maximum Safe Operating Area. SINGLE PULSE I I T N E S N A R T E V T C E F F E D E Z L A M R O N I , ) t ( r I E C N A T S S E R L A M R E H T 1 0.1 0.01 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1a. Transient thermal response will change depending on the circuit board design. BSS138 Rev B(W) 

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