NTAG213_215_216数据手册(NTAG213_215_216).pdf

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1. General description

1.1 Contactless energy and data transfer

1.2 Simple deployment and user convenience

1.3 Security

1.4 NFC Forum Tag 2 Type compliance

1.5 Anticollision

2. Features and benefits

2.1 EEPROM

3. Applications

4. Quick reference data

5. Ordering information

6. Block diagram

7. Pinning information

7.1 Pinning

8. Functional description

8.1 Block description

8.2 RF interface

8.3 Data integrity

8.4 Communication principle

8.4.1 IDLE state

8.4.2 READY1 state

8.4.3 READY2 state

8.4.4 ACTIVE state

8.4.5 AUTHENTICATED state

8.4.6 HALT state

8.5 Memory organization

8.5.1 UID/serial number

8.5.2 Static lock bytes (NTAG21x)

8.5.3 Dynamic Lock Bytes

8.5.4 Capability Container (CC bytes)

8.5.5 Data pages

8.5.6 Memory content at delivery

8.5.7 Configuration pages

8.6 NFC counter function

8.7 ASCII mirror function

8.7.1 UID ASCII mirror function

8.7.1.1 UID ASCII Mirror example

8.7.2 NFC counter mirror function

8.7.2.1 NFC counter mirror example

8.7.3 UID and NFC counter mirror function

8.7.3.1 UID and NFC counter mirror example

8.8 Password verification protection

8.8.1 Programming of PWD and PACK

8.8.2 Limiting negative verification attempts

8.8.3 Protection of special memory segments

8.9 Originality signature

9. Command overview

9.1 NTAG21x command overview

9.2 Timings

9.3 NTAG ACK and NAK

9.4 ATQA and SAK responses

10. NTAG commands

10.1 GET_VERSION

10.2 READ

10.3 FAST_READ

10.4 WRITE

10.5 COMPATIBILITY_WRITE

10.6 READ_CNT

10.7 PWD_AUTH

10.8 READ_SIG

11. Limiting values

12. Characteristics

13. Wafer specification

13.1 Fail die identification

14. Package outline

15. Bare die outline

16. Abbreviations

17. References

18. Revision history

19. Legal information

19.1 Data sheet status

19.2 Definitions

19.3 Disclaimers

19.4 Licenses

19.5 Trademarks

20. Contact information

21. Tables

22. Figures

23. Contents

NTAG213/215/216 NFC Forum Type 2 Tag compliant IC with 144/504/888 bytes user memory Rev. 3.2 — 2 June 2015 265332 Product data sheet COMPANY PUBLIC 1. General description NTAG213, NTAG215 and NTAG216 have been developed by NXP Semiconductors as standard NFC tag ICs to be used in mass market applications such as retail, gaming and consumer electronics, in combination with NFC devices or NFC compliant Proximity Coupling Devices. NTAG213, NTAG215 and NTAG216 (from now on, generally called NTAG21x) are designed to fully comply to NFC Forum Type 2 Tag (Ref. 2) and ISO/IEC14443 Type A (Ref. 1) specifications. Target applications include Out-of-Home and print media smart advertisement, SoLoMo applications, product authentication, NFC shelf labels, mobile companion tags. Target use cases include Out-of-Home smart advertisement, product authentication, mobile companion tags, Bluetooth or Wi-Fi pairing, electronic shelf labels and business cards. NTAG21x memory can also be segmented to implement multiple applications at the same time. Thanks to the high input capacitance, NTAG21x tag ICs are particularly tailored for applications requiring small footprints, without compromise on performance. Small NFC tags can be more easily embedded into e.g. product labels or electronic devices. The mechanical and electrical specifications of NTAG21x are tailored to meet the requirements of inlay and tag manufacturers. 1.1 Contactless energy and data transfer Communication to NTAG21x can be established only when the IC is connected to an antenna. Form and specification of the coil is out of scope of this document. When NTAG21x is positioned in the RF field, the high speed RF communication interface allows the transmission of the data with a baud rate of 106 kbit/s.

NXP Semiconductors NFC Forum T2T compliant IC with 144/504/888 bytes user memory NTAG213/215/216 NTAG IC NFC TAG ENERGY DATA NFC ENABLED DEVICE Fig 1. Contactless system 1.2 Simple deployment and user convenience 001aao403 NTAG21x offers specific features designed to improve integration and user convenience: • The fast read capability allows to scan the complete NDEF message with only one FAST_READ command, thus reducing the overhead in high throughput production environments • The improved RF performance allows for more flexibility in the choice of shape, dimension and materials • The option for 75 m IC thickness enables the manufacturing of ultrathin tags, for a more convenient integration in e.g. magazines or gaming cards. 1.3 Security • Manufacturer programmed 7-byte UID for each device • Pre-programmed Capability container with one time programmable bits • Field programmable read-only locking function • ECC based originality signature • 32-bit password protection to prevent unauthorized memory operations 1.4 NFC Forum Tag 2 Type compliance NTAG21x IC provides full compliance to the NFC Forum Tag 2 Type technical specification (see Ref. 2) and enables NDEF data structure configurations (see Ref. 3). 1.5 Anticollision An intelligent anticollision function allows to operate more than one tag in the field simultaneously. The anticollision algorithm selects each tag individually and ensures that the execution of a transaction with a selected tag is performed correctly without interference from another tag in the field. NTAG213_215_216 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved. Rev. 3.2 — 2 June 2015 265332 2 of 60

NXP Semiconductors NFC Forum T2T compliant IC with 144/504/888 bytes user memory NTAG213/215/216 2. Features and benefits  Contactless transmission of data and supply energy  Operating frequency of 13.56 MHz  Data transfer of 106 kbit/s  Data integrity of 16-bit CRC, parity, bit coding, bit counting  Operating distance up to 100 mm (depending on various parameters as e.g. field strength and antenna geometry)  7-byte serial number (cascade level 2 according to ISO/IEC 14443-3)  UID ASCII mirror for automatic serialization of NDEF messages  Automatic NFC counter triggered at read command  NFC counter ASCII mirror for automatic adding the NFC counter value to the NDEF message  ECC based originality signature  Fast read command  True anticollision  50 pF input capacitance 2.1 EEPROM  180, 540 or 924 bytes organized in 45, 135 or 231 pages with 4 bytes per page  144, 504 or 888 bytes freely available user Read/Write area (36, 126 or 222 pages)  4 bytes initialized capability container with one time programmable access bits  Field programmable read-only locking function per page for the first 16 pages  Field programmable read-only locking function above the first 16 pages per double page for NTAG213 or per 16 pages for NTAG215 and NTAG216  Configurable password protection with optional limit of unsuccessful attempts  Anti-tearing support for capability container (CC) and lock bits  ECC supported originality check  Data retention time of 10 years  Write endurance 100.000 cycles 3. Applications  Smart advertisement  Goods and device authentication  Call request  SMS  Call to action  Voucher and coupons  Bluetooth or Wi-Fi pairing  Connection handover  Product authentication  Mobile companion tags  Electronic shelf labels  Business cards NTAG213_215_216 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved. Rev. 3.2 — 2 June 2015 265332 3 of 60

NXP Semiconductors NFC Forum T2T compliant IC with 144/504/888 bytes user memory NTAG213/215/216 4. Quick reference data Quick reference data Parameter input capacitance input frequency Table 1. Symbol Ci fi EEPROM characteristics retention time tret write endurance Nendu(W) [1] Tamb = 22 C Tamb = 22 C LCR meter, Tamb = 22 C, fi = 13.56 MHz, 2 V RMS. Conditions [1] Min - - Typ 50.0 13.56 10 100000 - - Max - - - - Unit pF MHz years cycles 5. Ordering information Table 2. Type number Ordering information Package Name FFC Bump NT2H1311G0DUF NT2H1311G0DUD FFC Bump NT2H1311G0DA8 MOA8 NT2H1511G0DUF FFC Bump NT2H1511G0DUD FFC Bump NT2H1511G0DA8 MOA8 NT2H1611G0DUF FFC Bump NT2H1611G0DUD FFC Bump NT2H1611G0DA8 MOA8 Description 8 inch wafer, 75 m thickness, on film frame carrier, electronic fail die marking according to SECS-II format), Au bumps, 144 bytes user memory, 50 pF input capacitance 8 inch wafer, 120 m thickness, on film frame carrier, electronic fail die marking according to SECS-II format), Au bumps, 144 bytes user memory, 50 pF input capacitance plastic lead less module carrier package; 35 mm wide tape,144 bytes user memory, 50 pF input capacitance 8 inch wafer, 75 m thickness, on film frame carrier, electronic fail die marking according to SECS-II format), Au bumps, 504 bytes user memory, 50 pF input capacitance 8 inch wafer, 120 m thickness, on film frame carrier, electronic fail die marking according to SECS-II format), Au bumps, 504 bytes user memory, 50 pF input capacitance plastic lead less module carrier package; 35 mm wide tape, 504 bytes user memory, 50 pF input capacitance 8 inch wafer, 75 m thickness, on film frame carrier, electronic fail die marking according to SECS-II format), Au bumps, 888 bytes user memory, 50 pF input capacitance 8 inch wafer, 120 m thickness, on film frame carrier, electronic fail die marking according to SECS-II format), Au bumps, 888 bytes user memory, 50 pF input capacitance plastic lead less module carrier package; 35 mm wide tape, 888 bytes user memory, 50 pF input capacitance Version - - SOT500-4 - - SOT500-4 - - SOT500-4 NTAG213_215_216 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved. Rev. 3.2 — 2 June 2015 265332 4 of 60

NFC Forum T2T compliant IC with 144/504/888 bytes user memory NTAG213/215/216 NXP Semiconductors 6. Block diagram DIGITAL CONTROL UNIT antenna RF-INTERFACE ANTICOLLISION EEPROM INTERFACE EEPROM COMMAND INTERPRETER Fig 2. Block diagram of NTAG213/215/216 aaa-006979 7. Pinning information 7.1 Pinning The pinning of the NTAG213/215/216 wafer delivery is shown in section “Bare die outline” (see Section 15). The pinning of the NTAG213/215/216 MOA8 module is shown in Figure 3. LA top view LB Fig 3. Pin configuration for SOT500-4 (MOA8) aaa-006273 Table 3. Pin LA LB Pin allocation table Symbol LA LB Antenna connection LA Antenna connection LB NTAG213_215_216 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved. Rev. 3.2 — 2 June 2015 265332 5 of 60

NXP Semiconductors NFC Forum T2T compliant IC with 144/504/888 bytes user memory NTAG213/215/216 8. Functional description 8.1 Block description NTAG21x ICs consist of a 180 (NTAG213), 540 bytes (NTAG215) or 924 bytes (NTAG216) EEPROM, RF interface and Digital Control Unit (DCU). Energy and data are transferred via an antenna consisting of a coil with a few turns which is directly connected to NTAG21x. No further external components are necessary. Refer to Ref. 4 for details on antenna design. • RF interface: – modulator/demodulator – rectifier – clock regenerator – Power-On Reset (POR) – voltage regulator • Anticollision: multiple cards may be selected and managed in sequence • Command interpreter: processes memory access commands supported by the NTAG21x • EEPROM interface • NTAG213 EEPROM: 180 bytes, organized in 45 pages of 4 byte per page. – 26 bytes reserved for manufacturer and configuration data – 34 bits used for the read-only locking mechanism – 4 bytes available as capability container – 144 bytes user programmable read/write memory • NTAG215 EEPROM: 540 bytes, organized in 135 pages of 4 byte per page. – 26 bytes reserved for manufacturer and configuration data – 28 bits used for the read-only locking mechanism – 4 bytes available as capability container – 504 bytes user programmable read/write memory • NTAG216 EEPROM: 924 bytes, organized in 231 pages of 4 byte per page. – 26 bytes reserved for manufacturer and configuration data – 37 bits used for the read-only locking mechanism – 4 bytes available as capability container – 888 bytes user programmable read/write memory 8.2 RF interface The RF-interface is based on the ISO/IEC 14443 Type A standard. During operation, the NFC device generates an RF field. The RF field must always be present (with short pauses for dat communication) as it is used for both communication and as power supply for the tag. NTAG213_215_216 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved. Rev. 3.2 — 2 June 2015 265332 6 of 60

NXP Semiconductors NFC Forum T2T compliant IC with 144/504/888 bytes user memory NTAG213/215/216 For both directions of data communication, there is one start bit at the beginning of each frame. Each byte is transmitted with an odd parity bit at the end. The LSB of the byte with the lowest address of the selected block is transmitted first. The maximum length of a NFC device to tag frame is 163 bits (16 data bytes + 2 CRC bytes = 16×9 + 2×9 + 1 start bit). The maximum length of a fixed size tag to NFC device frame is 307 bits (32 data bytes + 2 CRC bytes = 32 9 + 2  9 + 1 start bit). The FAST_READ command has a variable frame length depending on the start and end address parameters. The maximum frame length supported by the NFC device needs to be taken into account when issuing this command. For a multi-byte parameter, the least significant byte is always transmitted first. As an example, when reading from the memory using the READ command, byte 0 from the addressed block is transmitted first, followed by bytes 1 to byte 3 out of this block. The same sequence continues for the next block and all subsequent blocks. 8.3 Data integrity Following mechanisms are implemented in the contactless communication link between NFC device and NTAG to ensure very reliable data transmission: • 16 bits CRC per block • parity bits for each byte • bit count checking • bit coding to distinguish between “1”, “0” and “no information” • channel monitoring (protocol sequence and bit stream analysis) NTAG213_215_216 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved. Rev. 3.2 — 2 June 2015 265332 7 of 60

NXP Semiconductors NFC Forum T2T compliant IC with 144/504/888 bytes user memory NTAG213/215/216 8.4 Communication principle The commands are initiated by the NFC device and controlled by the Digital Control Unit of the NTAG21x. The command response is depending on the state of the IC and for memory operations also on the access conditions valid for the corresponding page. POR IDLE HALT WUPA REQA WUPA READY 1 ANTICOLLISION READ from page 0 SELECT cascade level 1 HLTA HLTA READ from page 0 READY 2 ANTICOLLISION SELECT cascade level 2 ACTIVE PWD_AUTH AUTHENTICATED READ (16 Byte) FAST_READ COMPATIBILITY_WRITE WRITE, (4 Byte) GET_VERSION READ_SIG READ_CNT identification and selection procedure memory operations aaa-008072 Remark: In all states, the command interpreter returns to the idle state on receipt of an unexpected command. If the IC was previously in the HALT state, it returns to that state. State diagram Fig 4. NTAG213_215_216 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved. Rev. 3.2 — 2 June 2015 265332 8 of 60

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