Table 1. Device summary
1 Introduction
2 Description
Table 2. STM32F411xC/xE features and peripheral counts
2.1 Compatibility with STM32F4 series
3 Functional overview
3.1 ARM® Cortex®-M4 with FPU core with embedded Flash and SRAM
3.2 Adaptive real-time memory accelerator (ART Accelerator™)
3.3 Batch Acquisition mode (BAM)
3.4 Memory protection unit
3.5 Embedded Flash memory
3.6 CRC (cyclic redundancy check) calculation unit
3.7 Embedded SRAM
3.8 Multi-AHB bus matrix
3.9 DMA controller (DMA)
3.10 Nested vectored interrupt controller (NVIC)
3.11 External interrupt/event controller (EXTI)
3.12 Clocks and startup
3.13 Boot modes
3.14 Power supply schemes
3.15 Power supply supervisor
3.15.1 Internal reset ON
3.15.2 Internal reset OFF
3.16 Voltage regulator
3.16.1 Regulator ON
3.16.2 Regulator OFF
3.16.3 Regulator ON/OFF and internal power supply supervisor availability
Table 3. Regulator ON/OFF and internal power supply supervisor availability
3.17 Real-time clock (RTC) and backup registers
3.18 Low-power modes
3.19 VBAT operation
3.20 Timers and watchdogs
Table 4. Timer feature comparison
3.20.1 Advanced-control timers (TIM1)
3.20.2 General-purpose timers (TIMx)
3.20.3 Independent watchdog
3.20.4 Window watchdog
3.20.5 SysTick timer
3.21 Inter-integrated circuit interface (I2C)
Table 5. Comparison of I2C analog and digital filters
3.22 Universal synchronous/asynchronous receiver transmitters (USART)
Table 6. USART feature comparison
3.23 Serial peripheral interface (SPI)
3.24 Inter-integrated sound (I2S)
3.25 Audio PLL (PLLI2S)
3.26 Secure digital input/output interface (SDIO)
3.27 Universal serial bus on-the-go full-speed (OTG_FS)
3.28 General-purpose input/outputs (GPIOs)
3.29 Analog-to-digital converter (ADC)
3.30 Temperature sensor
3.31 Serial wire JTAG debug port (SWJ-DP)
3.32 Embedded Trace Macrocell™
4 Pinouts and pin description
Table 7. Legend/abbreviations used in the pinout table
Table 8. STM32F411xC/xE pin definitions (continued)
Table 9. Alternate function mapping
5 Memory mapping
Table 10. STM32F411xC/xE register boundary addresses
6 Electrical characteristics
6.1 Parameter conditions
6.1.1 Minimum and maximum values
6.1.2 Typical values
6.1.3 Typical curves
6.1.4 Loading capacitor
6.1.5 Pin input voltage
6.1.6 Power supply scheme
6.1.7 Current consumption measurement
6.2 Absolute maximum ratings
Table 11. Voltage characteristics
Table 12. Current characteristics
Table 13. Thermal characteristics
6.3 Operating conditions
6.3.1 General operating conditions
Table 14. General operating conditions
Table 15. Features depending on the operating power supply range
6.3.2 VCAP1/VCAP2 external capacitors
Table 16. VCAP1/VCAP2 operating conditions
6.3.3 Operating conditions at power-up/power-down (regulator ON)
Table 17. Operating conditions at power-up / power-down (regulator ON)
6.3.4 Operating conditions at power-up / power-down (regulator OFF)
Table 18. Operating conditions at power-up / power-down (regulator OFF)
6.3.5 Embedded reset and power control block characteristics
Table 19. Embedded reset and power control block characteristics
6.3.6 Supply current characteristics
Typical and maximum current consumption
Table 20. Typical and maximum current consumption, code with data processing (ART accelerator disabled) running from SRAM - VDD = 1.7 V
Table 21. Typical and maximum current consumption, code with data processing (ART accelerator disabled) running from SRAM - VDD = 3.6 V
Table 22. Typical and maximum current consumption in run mode, code with data processing (ART accelerator enabled except prefetch) running from Flash memory- VDD = 1.7 V
Table 23. Typical and maximum current consumption in run mode, code with data processing (ART accelerator enabled except prefetch) running from Flash memory - VDD = 3.6 V
Table 24. Typical and maximum current consumption in run mode, code with data processing (ART accelerator disabled) running from Flash memory - VDD = 3.6 V
Table 25. Typical and maximum current consumption in run mode, code with data processing (ART accelerator enabled with prefetch) running from Flash memory - VDD = 3.6 V
Table 26. Typical and maximum current consumption in Sleep mode - VDD = 3.6 V
Table 27. Typical and maximum current consumptions in Stop mode - VDD = 1.7 V
Table 28. Typical and maximum current consumption in Stop mode - VDD=3.6 V
Table 29. Typical and maximum current consumption in Standby mode - VDD= 1.7 V
Table 30. Typical and maximum current consumption in Standby mode - VDD= 3.6 V
Table 31. Typical and maximum current consumptions in VBAT mode
I/O system current consumption
The current consumption of the I/O system has two components: static and dynamic.
Table 32. Switching output I/O current consumption
On-chip peripheral current consumption
Table 33. Peripheral current consumption
6.3.7 Wakeup time from low-power modes
Table 34. Low-power mode wakeup timings(1)
6.3.8 External clock source characteristics
High-speed external user clock generated from an external source
Table 35. High-speed external user clock characteristics
Low-speed external user clock generated from an external source
Table 36. Low-speed external user clock characteristics
High-speed external clock generated from a crystal/ceramic resonator
Table 37. HSE 4-26 MHz oscillator characteristics
Low-speed external clock generated from a crystal/ceramic resonator
Table 38. LSE oscillator characteristics (fLSE = 32.768 kHz)
6.3.9 Internal clock source characteristics
High-speed internal (HSI) RC oscillator
Table 39. HSI oscillator characteristics
Low-speed internal (LSI) RC oscillator
Table 40. LSI oscillator characteristics
6.3.10 PLL characteristics
Table 41. Main PLL characteristics
Table 42. PLLI2S (audio PLL) characteristics
6.3.11 PLL spread spectrum clock generation (SSCG) characteristics
Table 43. SSCG parameter constraints
6.3.12 Memory characteristics
Flash memory
Table 44. Flash memory characteristics
Table 45. Flash memory programming
Table 46. Flash memory programming with VPP voltage
Table 47. Flash memory endurance and data retention
6.3.13 EMC characteristics
Functional EMS (electromagnetic susceptibility)
Table 48. EMS characteristics for LQFP100 package
Designing hardened software to avoid noise problems
Electromagnetic Interference (EMI)
Table 49. EMI characteristics for LQFP100
6.3.14 Absolute maximum ratings (electrical sensitivity)
Electrostatic discharge (ESD)
Table 50. ESD absolute maximum ratings
Static latchup
Table 51. Electrical sensitivities
6.3.15 I/O current injection characteristics
Functional susceptibility to I/O current injection
Table 52. I/O current injection susceptibility
6.3.16 I/O port characteristics
General input/output characteristics
Table 53. I/O static characteristics
Output driving current
Output voltage levels
Table 54. Output voltage characteristics
Input/output AC characteristics
Table 55. I/O AC characteristics
6.3.17 NRST pin characteristics
Table 56. NRST pin characteristics
6.3.18 TIM timer characteristics
Table 57. TIMx characteristics
6.3.19 Communications interfaces
I2C interface characteristics
Table 58. I2C characteristics
Table 59. SCL frequency (fPCLK1= 50 MHz, VDD = VDD_I2C = 3.3 V)
SPI interface characteristics
Table 60. SPI dynamic characteristics
I2S interface characteristics
Table 61. I2S dynamic characteristics
USB OTG full speed (FS) characteristics
Table 62. USB OTG FS startup time
Table 63. USB OTG FS DC electrical characteristics
Table 64. USB OTG FS electrical characteristics
6.3.20 12-bit ADC characteristics
Table 65. ADC characteristics
Table 66. ADC accuracy at fADC = 18 MHz
Table 67. ADC accuracy at fADC = 30 MHz
Table 68. ADC accuracy at fADC = 36 MHz
Table 69. ADC dynamic accuracy at fADC = 18 MHz - limited test conditions
Table 70. ADC dynamic accuracy at fADC = 36 MHz - limited test conditions
General PCB design guidelines
6.3.21 Temperature sensor characteristics
Table 71. Temperature sensor characteristics
Table 72. Temperature sensor calibration values
6.3.22 VBAT monitoring characteristics
Table 73. VBAT monitoring characteristics
6.3.23 Embedded reference voltage
Table 74. Embedded internal reference voltage
Table 75. Internal reference voltage calibration values
6.3.24 SD/SDIO MMC/eMMC card host interface (SDIO) characteristics
Table 76. Dynamic characteristics: SD / MMC characteristics
Table 77. Dynamic characteristics: eMMC characteristics VDD = 1.7 V to 1.9 V
6.3.25 RTC characteristics
Table 78. RTC characteristics
7 Package characteristics
7.1 Package mechanical data
7.1.1 WLCSP49, 3.034 x 3.22 mm, 0.4 mm pitch wafer level chip scale package
Table 79. STM32F411xC/xE WLCSP49 wafer level chip scale package mechanical data
Table 80. WLCSP49 recommended PCB design rules (0.4 mm pitch)
Device marking
7.1.2 UFQFPN48, 7 x 7 mm, 0.5 mm pitch package
Table 81. UFQFPN48, 7 x 7 mm, 0.5 mm pitch, package mechanical data
Device marking
7.1.3 LQFP64, 10 x 10 mm, 64-pin low-profile quad flat package
Table 82. LQFP64, 10 x 10 mm, 64-pin low-profile quad flat package mechanical data
Device marking
7.1.4 LQFP100, 14 x 14 mm, 100-pin low-profile quad flat package
Table 83. LQPF100, 14 x 14 mm, 100-pin low-profile quad flat package mechanical data
Device marking
7.1.5 UFBGA100, 7 x 7 mm, 0.5 mm pitch package
Table 84. UFBGA100, 7 x 7 mm, 0.50 mm pitch, ultra fine pitch ball grid array package mechanical data
Device marking
7.2 Thermal characteristics
7.2.1 Reference document
8 Part numbering
Table 85. Ordering information scheme
Table 86. Device order codes
Appendix A Recommendations when using the internal reset OFF
A.1 Operating conditions
Table 87. Limitations depending on the operating power supply range
Appendix B Application block diagrams
B.1 USB OTG Full Speed (FS) interface solutions
B.2 Sensor Hub application example
B.3 Batch Acquisition Mode (BAM) example
9 Revision history
Table 88. Document revision history