JEDEC
STANDARD
Addendum No. 1 to JESD209-4 - Low
Power Double Data Rate 4X
(LPDDR4X)
JESD209-4-1
JANUARY 2017
JEDEC SOLID STATE TECHNOLOGY ASSOCIATION
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JEDEC Standard No. 209-4-1
Addendum No. 1 to JESD209-4 - LOW POWER DOUBLE DATA RATE 4X (LPDDR4X)
Contents
1
2
Scope ................................................................................................................................. 1
Package ballout and Pin Definition ................................................................................. 2
2.1 Pad Order ........................................................................................................................... 2
2.2 Single Channel Pad Order ................................................................................................. 3
2.3
LPDDR4X packages ........................................................................................................... 4
2.3.1 LPDDR4 34x34 Quad x16 Channel (Fits 14x14 0.4 mm pitch) – Using MO-317A ............. 4
2.3.2 144 ball ePoP MCP One-Channel FBGA (top view) using MO-323A ................................. 5
2.3.3 200-ball x32 Discrete Package, 0.80 mm x 0.65 mm using MO-311 .................................. 6
2.3.4 432-ball x64 HDI Discrete Package, 0.50 mm x 0.50 mm (MO-313) .................................. 7
2.3.5 254 ball e•MMC MCP Two-Channel FBGA (top view) using MO-276 .............................. 10
2.3.6 254 ball UFS MCP Two-Channel FBGA (top view) using MO-276 ................................... 11
2.3.7 254 ball e•MMC MCP One Channel FBGA (top view) using MO-276 .............................. 10
2.4 Pad Definition and Description ......................................................................................... 13
2.5 Mode Register Definition .................................................................................................. 14
3
Command Definitions and Timing Diagrams ............................................................... 23
3.1 Pull Up/Pull Down Driver Characteristics and Calibration ............................................... 23
3.2 ODT Mode Register and ODT Characteristics ................................................................ 23
3.3 On Die Termination for DQ, DQS and DMI ...................................................................... 25
3.4 Output Driver and Termination Register Temperature and Voltage Sensitivity ............... 27
4
AC and DC Operating Conditions ................................................................................. 28
4.1 Recommended DC Operating Conditions for low voltage ................................................ 28
4.2 Single Ended Output Slew Rate ....................................................................................... 28
4.3 Differential Output Slew Rate ........................................................................................... 29
5
VREF Specifications ......................................................................................................... 30
5.1 CA Internal VREF Specifications ......................................................................................... 30
5.2 DQ Internal VREF Specifications ........................................................................................ 30
6
7
8
Power-up, Initialization and Power-off Procedure ....................................................... 30
ODT Mode Register and ODT State Table .................................................................... 33
Core Timing ..................................................................................................................... 34
-i-
JEDEC Standard No. 209-4-1
Tables
Contents (cont’d)
Table 1 Pad Definition and Description ...................................................................................... 13
Table 2 Mode Register Assignment in LPDDR4 SDRAM .......................................................... 14
Table 3 VREF Settings for Range[0] and Range[1] ...................................................................... 18
Table 4 VREF Settings for Range[0] and Range[1] ...................................................................... 20
Table 5 LPDDR4X Byte Mode Device (MR11 OP[6:4] 000B Case) ....................................... 22
Table 6 Pull-down Driver Characteristics, with ZQ Calibration .................................................. 23
Table 7 Terminated Pull-Up Characteristics, with ZQ Calibration .............................................. 23
Table 8 Terminated Valid Calibration Points .............................................................................. 23
Table 9 ODT DC Electrical Characteristics, assuming RZQ = 240 Ω +/-1% over the entire
operating temperature range after a proper ZQ calibration. ....................................................... 24
Table 10 ODT DC Electrical Characteristics, assuming RZQ = 240 Ω +/-1% over the entire
operating temperature range after a proper ZQ calibration. ....................................................... 26
Table 11 Output Driver and Termination Register Sensitivity Definition .................................... 27
Table 12 Output Driver and Termination Register Temperature and Voltage Sensitivity .......... 27
Table 13 Recommended DC Operating Conditions ................................................................... 28
Table 14 Output Slew Rate (single-ended) for 0.6 V VDDQ ......................................................... 28
Table 15 Differential Output Slew Rate for 0.6 V VDDQ ............................................................... 29
Table 16 CA Internal VREF Specifications ................................................................................... 30
Table 17 DQ Internal VREF Specifications .................................................................................. 29
Table 18 MRS defaults settings ................................................................................................. 30
Table 19 Command Bus ODT State .......................................................................................... 33
Table 20 Core Timing ................................................................................................................ 34
Figures
Figure 1 On Die Termination for CA .......................................................................................... 23
Figure 2 On Die Termination ...................................................................................................... 25
Figure 3 Single Ended Output Slew Rate Definition .................................................................. 28
Figure 4 Differential Output Slew Rate Definition ...................................................................... 29
-ii-
JEDEC Standard No. 209-4-1
Page 1
Addendum No. 1 to JESD209-4 - LOW POWER DOUBLE DATA RATE 4X (LPDDR4X)
(From JEDEC Board Ballot JCB-16-49, formulated under the cognizance of the JC-42.6
Subcommittee on Low Power Memories.)
1
Scope
This document defines the LPDDR4 standard, including features, functionalities, AC and DC
characteristics, packages, and ball/signal assignments. The purpose of this specification is to
define the minimum set of requirements for a JEDEC compliant 16 bit per channel SDRAM
device with either one or two channels. LPDDR4 dual channel device density ranges from 4 Gb
through 32 Gb and single channel density ranges from 2 Gb through 16 Gb. This document was
created using aspects of the following standards: DDR2 (JESD79-2), DDR3 (JESD79-3), DDR4
(JESD79-4), LPDDR (JESD209), LPDDR2 (JESD209-2) and LPDDR3 (JESD209-3).
Each aspect of the standard was considered and approved by committee ballot(s). The
accumulation of these ballots was then incorporated to prepare the LPDDR4 standard.
This addendum defines LPDDR4X specifications that supersede the LPDDR4 Standard
(JESD209-4) to enable low VDDQ operation of LPDDR4X devices to reduce power consumption.
JEDEC Standard No. 209-4-1
Page 2
2
Package Ballout and Pin Definition
2.1
Pad Order
CA1_A
CA0_A
VDD2
Ch. A Top
41
VDD2
VDD2
1
42 CKE_A
VSS
2
43
CS_A
VDD1
3
44
VSS
VDD2
4
45
VSS
5
46
6
VSSQ
47
7 DQ8_A
48 ODT(ca)_A
8
VDDQ
49
VSS
9 DQ9_A
50
VDD1
10 VSSQ
51
VSSQ
11 DQ10_A
52
DQ7_A
12 VDDQ
53
VDDQ
13 DQ11_A
54
DQ6_A
14 VSSQ
15 DQS1_t_A 55
VSSQ
16 DQS1_c_A 56
DQ5_A
57
VDDQ
17 VDDQ
58
DQ4_A
18 DMI1_A
59
19 VSSQ
VSSQ
60 DMI0_A
20 DQ12_A
61
21 VDDQ
VDDQ
62 DQS0_c_A
22 DQ13_A
63 DQS0_t_A
23 VSSQ
64
24 DQ14_A
65
25 VDDQ
66
26 DQ15_A
67
27 VSSQ
68
28
69
29 VDDQ
70
VDD2
30
71
VDD1
31
72
32
VSS
73
33 CA5_A
74
34 CA4_A
75
35
VDD2
76
36 CA3_A
77
37 CA2_A
Ch. A Bottom
38
39 CK_c_A
40 CK_t_A
Ch. A Top
VSSQ
DQ3_A
VDDQ
DQ2_A
VSSQ
DQ1_A
VDDQ
DQ0_A
VSSQ
VSS
VDD2
VDD1
VSS
VDD2
VSS
ZQ
Ch. B Top
141 VDD2
101 VDD2
142 CKE_B
102
VSS
143 CS_B
103 VDD1
144
VSS
104 VDD2
145 CA1_B
105
VSS
146 CA0_B
106 VSSQ
147 VDD2
107 DQ8_B
148 ODT(ca)_B
108 VDDQ
149
VSS
109 DQ9_B
150 VDD1
110 VSSQ
151 VSSQ
111 DQ10_B
152 DQ7_B
112 VDDQ
153 VDDQ
113 DQ11_B
154 DQ6_B
114 VSSQ
115 DQS1_t_B 155 VSSQ
116 DQS1_c_B 156 DQ5_B
153 VDDQ
117 VDDQ
158 DQ4_B
118 DMI1_B
159 VSSQ
119 VSSQ
160 DMI0_B
120 DQ12_B
161 VDDQ
121 VDDQ
162 DQS0_c_B
122 DQ13_B
163 DQS0_t_B
123 VSSQ
164 VSSQ
124 DQ14_B
165 DQ3_B
125 VDDQ
166 VDDQ
126 DQ15_B
167 DQ2_B
127 VSSQ
168 VSSQ
128 RESET_n
169 DQ1_B
129 VDDQ
170 VDDQ
130 VDD2
171 DQ0_B
131 VDD1
172 VSSQ
132
VSS
173
133 CA5_B
VSS
174 VDD2
134 CA4_B
175 VDD1
135 VDD2
176
136 CA3_B
VSS
177 VDD2
137 CA2_B
Ch. B Bottom
138
139 CK_c_B
140 CK_t_B
Ch. B Top
VSS
NOTE 1 Applications are recommended to follow bit/byte assignments. Bit or Byte swapping at the application level
requires review of MR and calibration features assigned to specific data bits/bytes.
NOTE 2 Additional pads are allowed for DRAM mfg-specific pads (“DNU”), or additional power pads as long as the
extra pads are grouped with like-named pads.
NOTE 3 VDDQ pads ((#12,#21,#57,#66,#112,#121,#157 and #166) may be individually assigned to either VDDQ or
VDD2. Please refer to vendor specification.