NDC7002N(NDC7002N).pdf-资料库

NDC7002N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features March 1996 These dual N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state reliable performance and fast switching. These devices is particularly suited for low voltage applications requiring a low current high side switch. resistance, provide rugged and DS(ON) . DS(ON) = 2W @ V =10V 0.51A, 50V, R GS High density cell design for low R Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High saturation current. ____________________________________________________________________________________________ 4 5 6 3 2 1 SOT-6 (SuperSOTTM-6) Absolute Maximum RatingsTA = 25°C unless otherwise noted Symbol Parameter Drain-Source Voltage V DSS GSS V I D P D Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed Maximum Power Dissipation (Note 1a) (Note 1a) (Note 1b) (Note 1c) Operating and Storage Temperature Range STG T ,T J THERMAL CHARACTERISTICS R q JA R q JC Thermal Resistance, Junction-to-Ambient (Note 1a) Thermal Resistance, Junction-to-Case (Note 1) NDC7002N Units 50 20 0.51 1.5 0.96 0.9 0.7 -55 to 150 130 60 V V A W °C °C/W °C/W © 1997 Fairchild Semiconductor Corporation NDC7002N.SAM

Parameter ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol OFF CHARACTERISTICS BV I DSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current = 250 µA = 0 V, I D = 40 V, V = 0 V Conditions V V DSS GS GS DS Gate - Body Leakage, Forward Gate - Body Leakage, Reverse I GSSF I GSSR ON CHARACTERISTICS (Note 2) V Gate Threshold Voltage GS(th) R DS(ON) Static Drain-Source On-Resistance Input Capacitance On-State Drain Current Forward Transconductance Output Capacitance Reverse Transfer Capacitance I D(on) g FS DYNAMIC CHARACTERISTICS Ciss Coss Crss SWITCHING CHARACTERISTICS (Note 2) t D(on) tr t D(off) tf Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn - Off Delay Time Turn - Off Fall Time Turn - On Delay Time Turn - On Rise Time V V GS GS = 20 V, V DS = -20 V, V = 0 V = 0 V DS V = V , I = 250 µA D GS DS V = 10 V, I = 0.51 A D GS V V V = 0.35 A = 4.5 V, I D = 10 V, V = 10 V DS = 10 V, I = 0.51 A D GS GS DS V = 25 V, V f = 1.0 MHz DS GS = 0 V, V V = 0.25 A, = 25 V, I D = 25 W = 10 V, R GEN DD GS = 25 V, V DS I = 0.51 A, V D GS = 10 V Min Typ Max Units T = 125°C J T = 125°C J T = 125°C J 50 1 0.8 1.5 1 500 100 -100 2.5 2.2 2 3.5 4 20 20 20 20 V µA nA nA V A mS pF pF pF nS nC nC nC 1.9 1.5 1 1.7 1.6 400 20 13 5 6 6 11 5 1 0.19 0.33 NDC7002N.SAM W

Parameter ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuous Source Current I S Maximum Pulse Source Current (Note 2) I SM Drain-Source Diode Forward Voltage V Conditions V SD = 0 V, I = 0.51 A (Note 2) S GS Min Typ Max Units 0.51 1.5 1.2 A A V 0.8 Notes: 1. R is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R q JA is guaranteed by q JC design while R P D(t) = TJ- TA q CA is determined by the user's board design. 2 (t) · RDS(ON ) TJ Rq J C+Rq CA(t) = I D TJ- TA Rq J A(t) = Typical R for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment: q JA a. 130oC/W when mounted on a 0.125 in2 pad of 2oz cpper. b. 140oC/W when mounted on a 0.005 in2 pad of 2oz cpper. c. 180oC/W when mounted on a 0.0015 in2 pad of 2oz cpper. 1a 1b 1c Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. NDC7002N.SAM

Typical Electrical Characteristics ) A ( T N E R R U C E C R U O S N A R D - I , I D I D E Z L A M R O N ) ( , N O S D R I - E C N A T S S E R N O E C R U O S N A R D - I 1.5 1.2 0.9 0.6 0.3 0 0 V =10V GS 8.0 7.0 6.0 5.5 5.0 I D E Z L A M R O N , ) n o ( S D R 4.5 4.0 3.5 3.0 1 2 3 4 5 E C N A T S S E R N O - I E C R U O S N A R D - I 3 2.5 2 1.5 1 0.5 0 V = 3.5V GS 4.0 4.5 5.0 5.5 6.0 7.0 8.0 10 0.3 0.6 0.9 1.2 1.5 I , DRAIN CURRENT (A) D V , DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. I = 0.51A D V = 10V GS 2 1.8 1.6 1.4 1.2 1 0.8 0.6 D E Z I L A M R O N , ) n o ( S D R E C N A T S S E R N O - I E C R U O S N A R D - I V = 10V GS T = 125°C J 2.5 2 1.5 1 25°C -55°C 0.4 -50 -25 25 0 T , JUNCTION TEMPERATURE (°C) J 50 75 100 125 150 0.5 0 0.3 0.6 0.9 1.2 1.5 I , DRAIN CURRENT (A) D Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Drain Current and Temperature. V = 10V DS T = -55°C J 25°C 125°C 1.5 1.2 0.9 0.6 ) A ( T N E R R U C N A R D I , I D 0.3 0 1 2 3 4 5 6 7 8 V , GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics. I D E Z L A M R O N , h t V E G A T L O V D L O H S E R H T E C R U O S E T A G - 1.2 1.1 1 0.9 0.8 0.7 -50 -25 25 0 T , JUNCTION TEMPERATURE (°C) J 50 75 100 Figure 6. Gate Threshold Variation with Temperature. DS V = V I = 250µA D GS 125 150 NDC7002N.SAM

Typical Electrical Characteristics (continued) E G A T L O V N W O D K A E R B E C R U O S N A R D - I I D E Z L A M R O N , S S D V B I = 250µA D 1.16 1.12 1.08 1.04 1 0.96 0.92 0.88 -50 -25 V = 0V GS T = 125°C J 1.5 1 0.5 0.1 0.01 25°C -55°C ) A I ( T N E R R U C N A R D E S R E V E R 100 T , JUNCTION TEMPERATURE (°C) 25 50 75 0 J , I S 125 150 0.001 0.2 0.4 V , BODY DIODE FORWARD VOLTAGE (V) 0.6 0.8 1 SD 1.2 Figure 7. Breakdown Voltage Variation with Temperature. Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. 1 0 0 5 0 2 0 1 0 5 2 ) F p ( I E C N A T C A P A C f = 1 MHz V = 0V GS C iss C oss C rss 1 0.1 0.2 0.5 1 2 5 10 2 0 50 V , DRAIN TO SOURCE VOLTAGE (V) DS ) V ( E G A T L O V E C R U O S E T A G - , S G V 10 8 6 4 2 0 V = 25V DS I = 0.51A D 0 0.2 0.4 0.8 Q , GATE CHARGE (nC) 0.6 g Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics. V = 10V DS 0.7 0.6 0.5 ) A ( T N E R R U C N A R D I , I D 0.4 0.3 0.2 0.1 0 0 T = -55°C J 25°C 125°C 0.3 0.6 0.9 1.2 1.5 V , GATE TO SOURCE VOLTAGE (V) GS Figure 11. Transconductance Variation with Drain Current and Temperature. 1 1.2 NDC7002N.SAM

Typical Thermal Characteristics 1.2 ) W ( 1.1 I I I N O T A P S S D R E W O P E T A T S Y D A E T S - 1a 1 b 1c 1 0.9 0.8 0.7 0.6 0 4.5"x5" FR-4 Board T = 25 C Still Air A o 0.2 0.8 2 2oz COPPER MOUNTING PAD AREA (in ) 0.4 0.6 0.55 0.5 1 b 0.45 1c 0.4 ) A I ( T N E R R U C N A R D E T A T S Y D A E T S - , I D 0.35 0 1 1a 0.125 4.5"x5" FR-4 Board T = 25 C Still Air V = 10V 0.1 2 2oz COPPER MOUNTING PAD AREA (in ) 0.075 0.05 GS A o 0.025 Figure 12. SOT-6 Dual Package Maximum Steady-State Power Dissipation versus Copper Mounting Pad Area. Figure 13. Maximum Steady-State Drain Current versus Copper Mounting Pad Area. 3 2 1 N ) L I M I T S ( O D R ) A 0.5 ( T N E R R U C N A R D I , I D 0.2 0.1 0.05 0.02 0.01 100us 1ms 10ms 100ms 1s DC V = 10V GS SINGLE PULSE R = See Note 1c q J A T = 25°C A 1 2 5 10 20 50 70 V , DRAIN-SOURCE VOLTAGE (V) DS Figure 14. Maximum Safe Operating Area. I E V T C E F F E D E Z L A M R O N I , ) t ( r I E C N A T S S E R L A M R E H T T N E S N A R T I 1 0.5 0.2 0.1 0.05 0.02 D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse R (t) = r(t) * R q JA R = See Note 1c q JA q JA P(pk) t 1 t 2 A T - T = P * R (t) q JA J Duty Cycle, D = t / t 1 2 0.01 0.0001 0.001 0.0 1 0.1 t , TIME (sec) 1 1 1 0 1 0 0 3 0 0 Figure 15. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design. NDC7002N.SAM

SuperSOTTM-6 Tape and Reel Data and Package Dimensions SSOT-6 Packaging Configuration: Figure 1.0 Customize Label Antistatic Cover Tape F63TNR Label Embossed Carrier Tape Packaging Description: SSOT-6 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 3,000 units per 7" or 177cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (anti- static coated). Other option comes in 10,000 units per 13" or 330cm diameter reel. This and some other options are described in the Packaging Information table. These full reels are individually barcode labeled and placed inside a pizza box (illustrated in figure 1.0) made of recyclable corrugated brown paper with a Fairchild logo printing. One pizza box contains three reels maximum. And these pizza boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped. 631 631 631 631 SSOT-6 Unit Orientation 631 Pin 1 343mm x 342mm x 64mm Intermediate box fo r D87Z Option F63TNR Label SSOT-6 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comments Standard (no flow c ode) TNR 3,000 7" Dia D87Z TNR 10,000 13" 184x187x47 343x343x64 9,000 0.0158 0.1440 30,000 0.0158 0.4700 F63TNR Label 184mm x 187mm x 47mm Pizza Box fo r Standar d Option F63TNR Label SSOT-6 Tape Leader and Trailer Configuration: Figure 2.0 F63TNR Label sampl e LOT: CBVK741B019 QTY: 3000 FSID: FDC633N SPEC: D/C1: D9842 QTY1: D/C2: QTY2: SPEC REV: CPN: N/F: F (F63TNR)3 Carrier Tape Cover Tape Trailer Tape 300mm mi nimum or 75 empty poc kets Comp onent s Lead er Tape 500mm mi nimum or 125 emp ty poc kets 1998 Fairchild Semiconductor Corporation August 1999, Rev. C

SuperSOTTM-6 Tape and Reel Data and Package Dimensions, continued SSOT-6 Embossed Carrier Tape Configuration: Figure 3.0 Wc B0 P0 D0 E1 F W E2 T K0 Tc Pkg type SSOT-6 (8mm) A0 P1 D1 User Direction of Feed Dimensions are in millimeter A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc 3.23 +/-0.10 3.18 +/-0.10 8.0 +/-0.3 1.55 +/-0.05 1.125 +/-0.125 1.75 +/-0.10 6.25 min 3.50 +/-0.05 4.0 +/-0.1 4.0 +/-0.1 1.37 +/-0.10 0.255 +/-0.150 5.2 +/-0.3 0.06 +/-0.02 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). 20 deg maximum component rotation B0 Sketch A (Side or Front Sectional View) Component Rotation A0 20 deg maximum Typical component cavity center line Typical component center line 0.5mm maximum 0.5mm maximum Sketch C (Top View) Component lateral movement SSOT-6 Reel Configuration: Figure 4.0 Sketch B (Top View) Component Rotation W1 Measured at Hub Dim A Max Dim A max Dim N See detail AA 7" Diameter Option B Min Dim C See detail AA W3 Dim D min 13" Diameter Option W2 max Measured at Hub Dimensions are in inches and millimeters DETAIL AA Tape Size 8mm 8mm Reel Option 7" Dia 13" Dia Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL) 7.00 177.8 13.00 330 0.059 1.5 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 0.795 20.2 2.165 55 4.00 100 0.331 +0.059/-0.000 8.4 +1.5/0 0.331 +0.059/-0.000 8.4 +1.5/0 0.567 14.4 0.567 14.4 0.311 – 0.429 7.9 – 10.9 0.311 – 0.429 7.9 – 10.9 July 1999, Rev. C

资料库

NDC7002N(NDC7002N).pdf

相关推荐

树莓派

热门标签

最新资料