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Radio frequency transistors: principles and practical applicatio....pdf
CONTENTS
1 Understanding RF Data Sheet Parameters
1 INTRODUCTION
D.C. SPECIFICATIONS
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS
POWER TRANSISTORS: FUNCTIONAL CHARACTERISTICS
LOW POWER TRANSISTORS: FUNCTIONAL CHARACTERISTICS
LINEAR MODULES: FUNCTIONAL CHARACTERISTICS
POWER MODULES: FUNCTIONAL CHARACTERISTICS
DATA SHEETS OF THE FUTURE
2 RF Transistor Fundamentals
TRANSISTOR CHARACTERISTICS IN SPECIFIC APPLICATIONS
BANDWIDTH CONSIDERATIONS IN SELECTING TRANSISTORS
MOSFETs VERSUS BIPOLARS IN SELECTING A TRANSISTOR
WHATÌS DIFFERENT ABOUT RF TRANSISTORS?
OTHER FACTORS IN RF POWER TRANSISTOR SELECTION
3 FETs and BJTs: Comparison of Parameters and Circuitry
TYPES OF TRANSISTORS
COMPARING THE PARAMETERS
CIRCUIT CONFIGURATIONS
COMMON EMITTER AND COMMON SOURCE
COMMON BASE AND COMMON GATE
COMMON COLLECTOR AND COMMON DRAIN
4 Other Factors Affecting Amplifier Design
CLASSES OF OPERATION
FORMS OF MODULATION
BIASING TO LINEAR OPERATION
OPERATING TRANSISTORS IN A PULSE MODE
5 Reliability Considerations
DIE TEMPERATURE AND ITS EFFECT ON RELIABILITY
OTHER RELIABILITY CONSIDERATIONS
6 Construction Techniques
TYPES OF PACKAGES
THE EMITTER/SOURCE INDUCTANCE
LAYING OUT A CIRCUIT BOARD
TIPS FOR SYSTEMATIC PC LAYOUT DESIGN
MOUNTING RF DEVICES
RF MODULES
7 Power Amplifier Design
STABILITY CONSIDERATIONS
INDUCTORS
MODELING CAPACITORS AT LOW IMPEDANCES
THE INPUT IMPEDANCE OF A HIGH POWER RF TRANSISTOR
THE FIRST MATCHING ELEMENT: A SHUNT C
CAPACITORS AT RADIO FREQUENCIES
COMPONENT CONSIDERATIONS
A PRACTICAL DESIGN EXAMPLE OF A SINGLE STAGE
INTERSTAGE IMPEDANCE MATCHING
IMPEDANCES AND MATCHING NETWORKS
PUSH-PULL AMPLIFIERS
MOSFETs
PARALLEL TRANSISTOR AMPLIFIERS: BIPOLAR TRANSISTORS
QUASI-LUMPED ELEMENT REALIZATION
DISTRIBUTED CIRCUIT REALIZATION
SINGLE-ENDED RF AMPLIFIER DESIGNS: LUMPED CIRCUIT REALIZATION
SINGLE-ENDED, PARALLEL, OR PUSH-PULL
8 Computer-Aided Design Programs
8 GENERAL
INSIDE MOTOROLAÌS IMPEDANCE MATCHING PROGRAM
MIMP DESCRIPTION
SMITH CHARTS AND MIMP
9 After the Power Amplifier
VSWR PROTECTION OF SOLID STATE AMPLIFIERS
TESTING THE CIRCUIT
OUTPUT FILTERING
TYPES OF LOW PASS FILTERS
THE DESIGN PROCEDURE
THE COMPONENTS
10 Wideband Impedance Matching
INTRODUCTION TO WIDEBAND CIRCUITS
CONVENTIONAL TRANSFORMERS
TWISTED WIRE TRANSFORMERS
TRANSMISSION LINE TRANSFORMERS
EQUAL DELAY TRANSMISSION LINE TRANSFORMERS
11 Powewr Splitting and Combining
11 INTRODUCTION
BASIC TYPES OF POWER COMBINERS
IN-PHASE AND 180 COMBINERS
90 HYBRIDS
LINE HYBRIDS
RING HYBRIDS
BRANCH LINE COUPLERS
WILKINSON COUPLERS
12 Frequency Compensation and Negative Feedback
FREQUENCY COMPENSATION
NEGATIVE FEEDBACK
13 Small Signal Amplifier Design
SCATTERING PARAMETERS
NOISE PARAMETERS
BIASING CONSIDERATIONS
POWER GAIN
STABILITY
SUMMARY OF GAIN/NOISE FIGURE DESIGN PROCEDURES
ACTUAL STEPS IN LOW POWER AMPLIFIER DESIGN
DETERMINING DESIRED VALUES OF SOURCE AND LOAD IMPEDANCES
CIRCUIT REALIZATION
14 LDMOS RF Power Transistors and Their Applications
14 INTRODUCTION
LDMOSFET VERSUS VERTICAL MOSFET
DEVICE DESIGN
LDMOS CHARACTERISTICS
LDMOS TRANSISTORS FOR RF POWER APPLICATIONS
SOME FET APPROXIMATIONS
APPLICATIONS OF LDMOS TRANSISTORS IN CURRENT GENERATION CELLULAR TECHNOLOGIES
RF POWER AMPLIFIER CHARACTERISTICS
PRACTICAL EXAMPLE OF DESIGNING A W-CDMA POWER AMPLIFIER
CIRCUIT TECHNIQUES FOR DESIGNING OPTIMUM CDMA AMPLIFIERS
MODELING OF LDMOS TRANSISTORS
COMMENTS
Index
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Radio
Frequency
Transistors
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Radio
Frequency
Transistors
Principles and Practical Applications
Second Edition
Norman Dye
Helge Granberg
Boston Oxford
Johannesburg Melbourne New Delhi
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Newnes is an imprint of Butterworth–Heinemann.
Copyright © 2001 by Butterworth–Heinemann
A member of the Reed Elsevier group
All rights reserved.
No part of this publication may be reproduced, stored in a retrieval system, or transmitted in
any form or by any means, electronic, mechanical, photocopying, recording, or otherwise,
without the prior written permission of the publisher.
Recognizing the importance of preserving what has been written, Butterworth–
Heinemann prints its books on acid-free paper whenever possible.
Butterworth–Heinemann supports the efforts of American Forests and the Global
ReLeaf program in its campaign for the betterment of trees, forests, and our
environment.
Library of Congress Cataloging-in-Publication Data
Dye, Norm, 1929–
Radio frequency transistors : principles and practical
applications / Norman Dye, Helge Granberg.—2nd ed.
p.
cm.
Includes bibliographical references and index.
ISBN 0-7506-7281-1 (pbk. : alk. paper)
1. Power transistors.
2. Transistor amplifiers.
3. Transistor
radio transmitters.
Helge, 1932–
II. Title.
4. Amplifiers, Radio frequency.
I. Granberg,
TK7871.92 .D96 2000
621.384'12—dc21
00-045618
British Library Cataloguing-in-Publication Data
A catalogue record for this book is available from the British Library.
The publisher offers special discounts on bulk orders of this book.
For information, please contact:
Manager of Special Sales
Butterworth-Heinemann
225 Wildwood Avenue
Woburn, MA 01801-2041
Tel: 781-904-2500
Fax: 781-904-2620
For information on all Newnes publications available, contact our World Wide Web home
page at: http://www.newnespress.com
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Printed in the United States of America
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Dedicated to the memory of Helge Granberg,
who died suddenly in January, 1996
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CONTENTS
Preface
Acknowledgments
xi
xiii
CHAPTER 1 Understanding RF Data Sheet Parameters 1
1
Introduction 1
D.C. Specifications
Maximum Ratings and Thermal Characteristics
Power Transistors: Functional Characteristics
Low Power Transistors: Functional Characteristics 14
Linear Modules: Functional Characteristics
Power Modules: Functional Characteristics
Data Sheets of the Future 30
18
26
5
9
CHAPTER 2
RF Transistor Fundamentals 31
What’s Different About RF Transistors?
Transistor Characteristics in Specific Applications
32
Bandwidth Considerations in Selecting Transistors 34
MOSFETs Versus Bipolars in Selecting a Transistor 38
Other Factors in RF Power Transistor Selection
31
38
CHAPTER 3 FETs and BJTs: Comparison of Parameters
and Circuitry 43
Types of Transistors 43
Comparing the Parameters 44
Circuit Configurations
Common Emitter and Common Source
Common Base and Common Gate
52
Common Collector and Common Drain
48
50
54
CHAPTER 4 Other Factors Affecting Amplifier Design 57
Classes of Operation
Forms of Modulation
Biasing to Linear Operation
Operating Transistors in a Pulse Mode
57
60
64
72
CHAPTER 5
Reliability Considerations 75
Die Temperature and Its Effect on Reliability
Other Reliability Considerations
81
75
CHAPTER 6 Construction Techniques 87
Types of Packages
The Emitter/Source Inductance
97
Laying Out a Circuit Board
87
93
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viii
Contents
Tips for Systematic PC Layout Design
Mounting RF Devices
RF Modules
103
109
102
CHAPTER 7
Power Amplifier Design 113
113
116
127
119
113
Single-Ended, Parallel, or Push-Pull
Single-Ended RF Amplifier Designs: Lumped Circuit Realization
Distributed Circuit Realization
114
Quasi-Lumped Element Realization
Parallel Transistor Amplifiers: Bipolar Transistors 117
MOSFETs
Push-Pull Amplifiers 120
Impedances and Matching Networks 123
Interstage Impedance Matching
A Practical Design Example of a Single Stage 129
Component Considerations
130
Capacitors at Radio Frequencies
The First Matching Element: A Shunt C 133
The Input Impedance of a High Power RF Transistor 134
Modeling Capacitors at Low Impedances
Inductors 136
Stability Considerations
135
132
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CHAPTER 8 Computer-Aided Design Programs 147
147
General
Inside Motorola’s Impedance Matching Program
MIMP Description
Smith Charts and MIMP 157
154
151
CHAPTER 9 After the Power Amplifier 161
VSWR Protection of Solid State Amplifiers 161
Testing the Circuit
Output Filtering
Types of Low Pass Filters 170
The Design Procedure 172
The Components
165
168
174
CHAPTER 10 Wideband Impedance Matching 179
179
Introduction to Wideband Circuits
Conventional Transformers 182
Twisted Wire Transformers 186
Transmission Line Transformers 190
Equal Delay Transmission Line Transformers 193
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