1. INTRODUCTION
1.1. General Description
1.2. Definitions and Abbreviations
1.3. Features
1.4. Diagram Legend
2. PHYSICAL INTERFACE
2.1. Pin Descriptions
2.2. PIN ASSIGNMENT (TOP VIEW)
SDR
only
SDR
only
Vss NC NU or VssQ NU or VccQ DQ7 DQ6 DQ5 DQ4 NU or VssQ NU or VccQ VccQ VCC VSS NU VccQ NU or VssQ DQ3 DQ2 DQ1 DQ0 NU or VccQ NU or VssQ NC Vss
Vcc Vss NC NC NC 1
0
0
1 NC VCC VSS NC NC CLE ALE
NC NC NC Vss Vcc
Tx58TEGxDCJ
SDR/Toggle
DDR1.0
SDR/Toggle
DDR1.0
Vcc Vss NC NC NC 1
0
0
1 NC VCC VSS NC NC CLE ALE
NC NC NC Vss Vcc
1 48 2 47 3 46 4 45 5 44 6 43 7 42 8 41 9 40 10 39 11 38 12 37 13 36 14 35 15 34 16 33 17 32 18 31 19 30 20 29 21 28 22 27 23 26 24 25
Vss NC VssQ VccQ DQ7 DQ6 DQ5 DQ4 VssQ VccQ VccQ VCC VSS DQS VccQ VssQ DQ3 DQ2 DQ1 DQ0 VccQ VssQ NC Vss
2.3. BLOCK DIAGRAM
Address register
to
Row address buffer decoder
ALE
CLE
DQ7
VSS
DQ0
VCC
Logic control
HV generator
Control circuit
Memory cell array
Sense amp
Data register
Column decoder
Column buffer
Command register
DQS
Status register
I/O Control circuit
VCC
Row address buffer decoder
VSS
Logic control
HV generator
Control circuit
Memory cell array
Sense amp
Data register
Column decoder
Column buffer
Command register
Status register
I/O Control circuit
1
1
Address register
Row address buffer decoder
VSS
VCC
Logic control
HV generator
Control circuit
Memory cell array
Sense amp
Data register
Column decoder
Column buffer
Command register
Status register
I/O Control circuit
to
0
ALE
CLE
0
DQ7
DQ0
VSS
VCC
VCC
VSS
Row address buffer decoder
Logic control
HV generator
Control circuit
Memory cell array
Sense amp
Data register
Column decoder
Column buffer
Command register
Status register
I/O Control circuit
1
1
Address register
Row address buffer decoder
Logic control
HV generator
Control circuit
Memory cell array
Sense amp
Data register
Column decoder
Column buffer
Command register
Status register
I/O Control circuit
to
0
ALE
CLE
0
DQ7
DQ0
2.4. Independent Data Buses
2.5. Absolute Maximum DC Rating
2.6. Operating Temperature Condition
2.7. Recommended Operating Conditions
2.8. Valid Blocks
NOTE:
1) The device occasionally contains unusable blocks.
2) The first block (Block 0) is guaranteed to be a valid block at the time of shipment.
3) The specification for the minimum number of valid blocks is applicable over the device lifetime.
4) The number of valid blocks includes extended blocks.
2.9. AC Overshoot/Undershoot Requirements
2.10. DC Operating Characteristics
1)*1: Icco0 is the average current during R/B signal=”Busy” state.
2)*2: All operation current are without data cache.
2.11. Input/Output Capacitance (TOPER =25℃, f=1MHz)
2.12. DQ Driver Strength
2.13. Input/Output Slew rate
2.14. R/ and SR[6] Relationship
2.15. Write Protect
3. MEMORY ORGANIZATION
3.1. Addressing
3.1.1. Plane Addressing
3.1.2. Extended Blocks Arrangement
3.2. Factory Defect Mapping
3.2.1. Device Requirements
3.2.2. Host Requirements
4. FUNCTION DESCRIPTION
4.1. Discovery and Initialization
4.1.1. Single Channel Discovery
4.1.2. Dual Channel Discovery
4.2. Mode Selection
H: VIH, L: VIL, *: VIH or VIL
4.2.1. Toggle DDR1.0 General Timing
4.2.1.1. Command Latch Cycle
4.2.1.2. Address Latch Cycle
4.2.1.3. Basic Data Input Timing
4.2.1.4. Basic Data Output Timing
4.2.1.5. Read ID Operation
4.2.1.6. Status Read Cycle
4.2.1.7. Set Feature
4.2.1.8. Get Feature
4.2.1.9. Page Read Operation
4.2.1.10. Page Program Operation
4.2.2. SDR General Timing
4.2.2.1. Command Latch Cycle
4.2.2.2. Address Latch Cycle
4.2.2.3. Basic Data Input Timing
4.2.2.4. Basic Data Output Timing
4.2.2.5. Read ID Operation
4.2.2.6. Status Read Cycle
4.2.2.7. Set Feature
4.2.2.8. Get Feature
4.2.2.9. Page Read Operation
4.2.2.10. Page Program Operation
4.3. AC Timing Characteristics
4.3.1. Timing Parameters Description
4.3.2. Timing Parameters Table
5. COMMAND DESCRIPTION AND DEVICE OPERATION
5.1. Basic Command Sets
5.2. Basic Operation
5.2.1. Page Read Operation
5.2.1.1. Page Read Operation with Random Data Output
5.2.1.2. Data Out After Status Read
5.2.2. Sequential Cache Read Operation
5.2.3. Random Cache Read Operation
5.2.4. Page Program Operation
5.2.4.1. Program Operation with Random Data Input
5.2.5. Cache Program Operation
5.2.6. Block Erase Operation
5.2.7. Copy-Back Program Operation
5.2.7.1. Copy-Back Program Operation with Random Data Input
5.2.8. Set Feature Operation
5.2.8.1. Driver strength setting (10h)
5.2.9. Get Feature Operation
5.2.10. Read ID Operation
5.2.10.1. 00h Address ID Definition
5.2.10.2. 40h Address ID Definition
5.2.11. Read Status Operation
5.2.12. Reset Operation
When Reset (FFh) command is input during Program operation
When Reset (FFh) command is input during Erase operation
When Reset (FFh) command is input during Read operation
When Read Status command (70h) is input after Reset operation
When two or more Reset commands are input in succession
5.2.13. Reset LUN Operation
5.3. Extended Operation
5.3.1. Extended Command Sets
5.3.2. Page Copy (2) Operation
5.3.3. Device Identification Table Read Operation
5.3.4. Device Identification Table Definition
5.3.5. Read Status Enhanced
5.3.6. Read LUN #0 Status Operation
5.4. Interleaving Operation
5.4.1. Interleaving Page Program
5.4.2. Interleaving Page Read
5.4.3. Interleaving Block Erase
5.4.4. Interleaving Read to Page Program
5.4.5. Interleaving Copy-Back Program (1/2)
5.4.6. Interleaving Copy-Back Program (2/2)
6. APPLICATION NOTES AND COMMENTS
DQS
DQS
DQS
DQS
R/
R/
DQS
DQS
R/
DQS
R/
DQS
R/
DQS
tWH
tCH
CLE
tCLS
tCLS
tWP
tALH
tDS
tDH
tALS
tDS
tDH
: VIH or VIL
ADD
ADD
tCS
tWP
ALE
CLE
: VIH or VIL
tCLH
tCH
tCH
tCLH
ADD
tWC
tWH
tWP
tDS
tDH
tWC
C
tWH
tWP
tDS
tDH
tDS
tDH
ALE
tCS
tCS
tDS
tDH
ADD
tWP
tWH
tWP
tALH
tALS
ADD
tRHOH
tRHOH
tRR
Command
tREA
tRLOH
tRLOH
tDS
tDH
tREA
tREA
tCLHZ
tRP
tREH
tRP
tRHZ
tRP
tRC
tCHZ
ALE
tALH
tCR
tCS2
tCH
tCLH
tCLS2
CLE
Dout
Dout
tALH
tCS
tCH
tCLS
tCS
tDS
tDH
tDS
tDH
DIN N
CLE
ALE
tCH
tCLH
DIN 1
DIN 0
tDS
tDH
tWC
tALS
tWP
tWH
tWP
tWP
If Fail
tDH
tALH
tCH
tCS
tCLS
tALS
tALH
tCH
tDS
tCS
tCLS
ALE
CLE
: VIH or VIL
*: 70h represents the hexadecimal number
: VIH or VIL
Status output
70h*
tREA
tRHZ
tDH
tDS
tIR
tRHOH
tWHR
tWHC
tCHZ
tCH
tWP
tCEA
tCR
tCS
tCLS
tCLH
CLE
tCLR
If Fail
: Do not input data while data is being output.
: VIH or VIL
tCEA
DOUT N ( 1
DOUT N
00h
tDS
tDH
Data out from Col. Add. N
tREA
tRR
tRC
tALS
tCH
tCLH
tCLS
tCS
tWB
tDS
tDH
tR
tCLR
tALH
tDS
tDH
tDS
tDH
tDS
tDH
tDS
tDH
ALE
CLE
tALH
tALS
tWC
tDS
tDH
tCH
tCLH
tCLS
tCS
ADD
ADD
ADD
ADD
ADD
30h
*) M: up to 17664 (byte input data for (8 device).
tADL
DIN N+1
80h
ADD
ADD
ADD
Status output
70h
10h
DINM
DINN
ADD
tALS
tALH
tDS
tWB
tPROG
tDH
tDS
tDH
tCS
: Do not input data while data is being output.
tALH
tDH
tDS
tCS
tCH
tCLH
: VIH or VIL
ALE
CLE
tDH
tDS
tALS
tCLS
tCLS
ADD
30
tRST for read
00
FF
00
tRST for erase
00
FF
D0
Internal erase voltagtRST (max 30 (s)
e
00
tRST for program
00
FF
10
80
Internal VPP
FF
FF
FF
The second command is invalid, but the third command is valid.
(1)
(2)
(3)
FF
FF
10
70
FF
Status : Pass/Fail ( Pass
: Ready/Busy ( Ready
80
FF
Address input
Command other than “81h”, “85h”, “11h” , “15h” or “FFh”
80
Programming cannot be executed.
10
XX
Mode specified by the command.
VCCQ ( 3.3 V / 1.8V Ta ( 25 C CL ( 50 pF
tf
tr
R
tr
tf
5 ns
10 ns
15 ns
2 K(
3 K(
4 K(
1 K(
0
0.5 (s
1.0 (s
1.5 (s
CL
R
VSS
Device
VCCQ
VCCQ
VOH
Busy
VOL
VOH
tr
VOL
VCCQ
Ready
tf
Fail
80
10
80
10
Address M
Data input
70
I/O
Address N
Data input
If the programming result for page address M is Fail, do not try to program the page to address N in another block without the data input sequence.
Because the previous input data has been lost, the same input sequence of 80h command, address and data is necessary.
10
80
M
N
Read operation
Program operation
CLE
Address input
00h
ALE
DQx
Ignored
30h
CLE
ALE
DQx
Address input
Ignored
80h
Data input
Program
Erase
7. Package Dimensions
8. Revision History
RESTRICTIONS ON PRODUCT USE
Bad Block
Bad Block
Block A
Block B
Error occurs
Buffer memory