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INA114手册.pdf
copyright.pdf
Free Download
®
INA114
INA114
INA114
Precision
INSTRUMENTATION AMPLIFIER
FEATURES
l LOW OFFSET VOLTAGE: 50m V max
l LOW DRIFT: 0.25m V/ C max
l LOW INPUT BIAS CURRENT: 2nA max
l HIGH COMMON-MODE REJECTION:
115dB min
l INPUT OVER-VOLTAGE PROTECTION:
– 40V
l WIDE SUPPLY RANGE: – 2.25 to – 18V
l LOW QUIESCENT CURRENT: 3mA max
l 8-PIN PLASTIC AND SOL-16
APPLICATIONS
l BRIDGE AMPLIFIER
l THERMOCOUPLE AMPLIFIER
l RTD SENSOR AMPLIFIER
l MEDICAL INSTRUMENTATION
l DATA ACQUISITION
DESCRIPTION
The INA114 is a low cost, general purpose instrumen-
tation amplifier offering excellent accuracy. Its versa-
tile 3-op amp design and small size make it ideal for a
wide range of applications.
A single external resistor sets any gain from 1 to 10,000.
Internal input protection can withstand up to – 40V
without damage.
The INA114 is laser trimmed for very low offset voltage
(50m V), drift (0.25m V/ C) and high common-mode
rejection (115dB at G = 1000). It operates with power
supplies as low as – 2.25V, allowing use in battery
operated and single 5V supply systems. Quiescent cur-
rent is 3mA maximum.
The INA114 is available in 8-pin plastic and SOL-16
surface-mount packages. Both are specified for the
–40 C to +85 C temperature range.
–
VIN
2
(4)
1
(2)
RG
8
(15)
3
(5)
+
VIN
Over-Voltage
Protection
Over-Voltage
Protection
A1
A2
25kW
25kW
V+
7
(13)
INA114
Feedback
(12)
6
(11)
5
(10)
DIP Connected
Internally
VO
Ref
G = 1 + 50kW
RG
25kW
25kW
A3
25kW
(SOIC)
25kW
4
(7)
V–
DIP
International Airport Industrial Park • Mailing Address: PO Box 11400, Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111 • Twx: 910-952-1111
Internet: http://www.burr-brown.com/ • FAXLine: (800) 548-6133 (US/Canada Only) • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132
©1992 Burr-Brown Corporation
PDS-1142D
1
INA114
Printed in U.S.A. March, 1998
®
SBOS014
SPECIFICATIONS
ELECTRICAL
At TA = +25 C, VS = – 15V, RL = 2kW,
unless otherwise noted.
PARAMETER
CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
INA114BP, BU
INA114AP, AU
INPUT
Offset Voltage, RTI
Initial
vs Temperature
vs Power Supply
Long-Term Stability
Impedance, Differential
Common-Mode
Input Common-Mode Range
Safe Input Voltage
Common-Mode Rejection
BIAS CURRENT
vs Temperature
OFFSET CURRENT
vs Temperature
NOISE VOLTAGE, RTI
f = 10Hz
f = 100Hz
f = 1kHz
fB = 0.1Hz to 10Hz
Noise Current
f=10Hz
f=1kHz
fB = 0.1Hz to 10Hz
GAIN
Gain Equation
Range of Gain
Gain Error
Gain vs Temperature
Resistance(1)
50kW
Nonlinearity
OUTPUT
Voltage
Load Capacitance Stability
Short Circuit Current
FREQUENCY RESPONSE
Bandwidth, –3dB
Slew Rate
Settling Time, 0.01%
Overload Recovery
POWER SUPPLY
Voltage Range
Current
TEMPERATURE RANGE
Specification
Operating
q JA
– 11
80
96
110
115
1
TA = +25 C
TA = TMIN to TMAX
VS = – 2.25V to – 18V
VCM = – 10V, D RS = 1kW
G = 1
G = 10
G = 100
G = 1000
G = 1000, RS = 0W
G = 1
G = 10
G = 100
G = 1000
G = 1
G = 1
G = 10
G = 100
G = 1000
IO = 5mA, TMIN to TMAX
VS = – 11.4V, RL = 2kW
VS = – 2.25V, RL = 2kW
– 13.5
10
1
VO = – 10V, G = 10
G = 1
G = 10
G = 100
G = 1000
G = 1
G = 10
G = 100
G = 1000
VIN = 0V
50% Overdrive
0.3
– 2.25
–40
–40
– 10 + 20/G – 50 + 100/G
– 0.1 + 0.5/G – 0.25 + 5/G
0.5 + 2/G
3 + 10/G
– 0.2 + 0.5/G
– 25 + 30/G – 125 + 500/G
– 0.25 + 5/G
– 1 + 10/G
[
[
[
[
[
1010 || 6
1010 || 6
– 13.5
96
115
120
120
– 0.5
– 8
– 0.5
– 8
15
11
11
0.4
0.4
0.2
18
1 + (50kW
/RG)
– 0.01
– 0.02
– 0.05
– 0.5
– 2
– 25
– 0.0001
– 0.0005
– 0.0005
– 0.002
– 13.7
– 10.5
– 1.5
1000
+20/–15
1
100
10
1
0.6
18
20
120
1100
20
– 15
– 2.2
80
– 40
– 2
– 2
10000
– 0.05
– 0.4
– 0.5
– 1
– 10
– 100
– 0.001
– 0.002
– 0.002
– 0.01
– 18
– 3
85
125
[
[
75
90
106
106
90
106
110
110
[
[
[
[
[
[
[
[
[
[
[
[
[
[
[
[
[
[
[
[
[
[
[
[
[
[
[
[
[
[
[
[
[
[
[
[
[
[
[
[
[
[
[
[
[
[
[
[
[
– 5
– 5
[
[
– 0.5
– 0.7
– 2
– 10
[
– 0.002
– 0.004
– 0.004
– 0.02
[
[
[
[
m V
m V/ C
m V/V
m V/mo
|| pF
|| pF
V
V
dB
dB
dB
dB
nA
pA/ C
nA
pA/ C
nV/ Hz
nV/ Hz
nV/ Hz
m Vp-p
pA/ Hz
pA/ Hz
pAp-p
V/V
V/V
%
%
%
%
ppm/ C
ppm/ C
% of FSR
% of FSR
% of FSR
% of FSR
V
V
V
pF
mA
MHz
kHz
kHz
kHz
V/m s
m s
m s
m s
m s
m s
V
mA
C
C
C/W
[ Specification same as INA114BP/BU.
NOTE: (1) Temperature coefficient of the “50kW
” term in the gain equation.
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant
any BURR-BROWN product for use in life support devices and/or systems.
®
INA114
2
W
W
–
–
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with ap-
propriate precautions. Failure to observe proper handling and
installation procedures can cause damage.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.
PACKAGE/ORDERING INFORMATION
PRODUCT
PACKAGE
PACKAGE
DRAWING TEMPERATURE
NUMBER(1)
RANGE
INA114AP
INA114BP
INA114AU
INA114BU
8-Pin Plastic DIP
8-Pin Plastic DIP
SOL-16 Surface-Mount
SOL-16 Surface-Mount
006
006
211
211
–40 C to +85 C
–40 C to +85 C
–40 C to +85 C
–40 C to +85 C
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book.
PIN CONFIGURATIONS
P Package
8-Pin DIP
Top View
RG
V–
IN
V+
IN
V–
1
2
3
4
8
7
6
5
RG
V+
VO
Ref
U Package
SOL-16 Surface-Mount
Top View
NC
RG
NC
V–
IN
V+
IN
NC
V–
NC
1
2
3
4
5
6
7
8
16
NC
15
RG
14
NC
13
V+
12
Feedback
11
VO
10
Ref
9
NC
ABSOLUTE MAXIMUM RATINGS(1)
Supply Voltage .................................................................................. – 18V
Input Voltage Range .......................................................................... – 40V
Output Short-Circuit (to ground) .............................................. Continuous
Operating Temperature ................................................. –40 C to +125 C
Storage Temperature ..................................................... –40 C to +125 C
Junction Temperature .................................................................... +150 C
Lead Temperature (soldering, 10s) ............................................... +300 C
NOTE: (1) Stresses above these ratings may cause permanent damage.
3
INA114
®
TYPICAL PERFORMANCE CURVES
At TA = +25 C, VS = – 15V, unless otherwise noted.
)
V
V
/
(
i
n
a
G
1k
100
10
1
GAIN vs FREQUENCY
)
B
d
(
n
o
j
i
t
c
e
e
R
e
d
o
M
-
n
o
m
m
o
C
COMMON-MODE REJECTION vs FREQUENCY
G = 100, 1k
G = 10
G = 1k
G = 100
G = 10
G = 1
140
120
100
80
60
40
20
0
10
100
1k
10k
Frequency (Hz)
100k
1M
10
100
1k
10k
Frequency (Hz)
100k
1M
INPUT COMMON-MODE VOLTAGE RANGE
vs OUTPUT VOLTAGE
POSITIVE POWER SUPPLY REJECTION
vs FREQUENCY
Limited by A
+ Output Swing
2
VO
)
V
(
e
g
a
t
l
o
V
e
d
o
M
-
n
o
m
m
o
C
15
10
5
0
–5
–10
–15
L i m i t e d b y A 1
S w i n g
+ O u t p u t
VD/2
VD/2
VCM
A3 – Output
Swing Limit
Limited by A
– Output Swing
2
–
+
–
+
(Any Gain)
140
120
100
)
B
d
(
n
o
j
i
t
c
e
e
R
y
p
p
u
S
l
A3 + Output
Swing Limit
y A
d b
u t S w i n
L i m it e
– O u t p
1
g
r
e
w
o
P
G = 1000
G = 100
G = 10
G = 1
80
60
40
20
0
–15
–10
–5
0
5
Output Voltage (V)
10
15
10
100
1k
10k
Frequency (Hz)
100k
1M
NEGATIVE POWER SUPPLY REJECTION
vs FREQUENCY
INPUT-REFERRED NOISE VOLTAGE
vs FREQUENCY
140
120
100
)
B
d
(
n
o
j
i
t
c
e
e
R
y
p
p
u
S
l
r
e
w
o
P
80
60
40
20
0
G = 100
G = 1000
G = 10
G = 1
1k
100
10
)
z
H
/
V
n
(
e
g
a
t
l
i
o
V
e
s
o
N
d
e
r
r
e
10
100
1k
10k
Frequency (Hz)
100k
1M
f
e
R
-
t
u
p
n
I
1
1
®
INA114
4
G = 1
G = 10
G = 100, 1000
G = 1000
BW Limit
10
100
1k
10k
Frequency (Hz)
TYPICAL PERFORMANCE CURVES (CONT)
At TA = +25 C, VS = – 15V, unless otherwise noted.
)
s
µ
(
i
e
m
T
g
n
i
l
t
t
e
S
1200
1000
800
600
400
200
0
1
SETTLING TIME vs GAIN
OFFSET VOLTAGE WARM-UP vs TIME
0.01%
0.1%
G ‡ 100
)
V
µ
(
e
g
n
a
h
C
e
g
a
t
l
o
V
t
e
s
f
f
O
6
4
2
0
–2
–4
–6
10
100
1000
0
15
30
45
60
75
90
105
120
Gain (V/V)
Time from Power Supply Turn-on (s)
INPUT BIAS AND INPUT OFFSET CURRENT
vs TEMPERATURE
INPUT BIAS CURRENT
vs DIFFERENTIAL INPUT VOLTAGE
±IB
IOS
)
A
m
(
t
n
e
r
r
u
C
s
a
B
i
t
u
p
n
I
3
2
1
0
–1
–2
–3
G = 1
G = 10
G = 100
G = 1000
–15
10
35
60
85
–45
–30
–15
0
15
30
45
Temperature (°C)
Differential Overload Voltage (V)
2
1
0
–1
–2
–40
)
A
n
(
t
n
e
r
r
u
C
t
e
s
f
f
O
t
u
p
n
I
d
n
a
s
a
B
i
t
u
p
n
I
)
A
m
(
t
n
e
r
r
u
C
s
a
B
i
t
u
p
n
I
INPUT BIAS CURRENT
vs COMMON-MODE INPUT VOLTAGE
MAXIMUM OUTPUT SWING vs FREQUENCY
|Ib1| + |Ib2|
Both Inputs
One Input
Over-Voltage
Protection
3
2
1
0
–1
–2
–3
Normal
Operation
Over-Voltage
Protection
One Input
Both Inputs
)
V
(
e
d
u
t
i
l
p
m
A
k
a
e
P
-
o
t
-
k
a
e
P
32
28
24
20
16
12
8
4
0
G = 1, 10
G = 100
G = 1000
–45
–30
–15
0
15
30
45
10
100
Common-Mode Voltage (V)
1k
10k
Frequency (Hz)
100k
1M
5
INA114
®
TYPICAL PERFORMANCE CURVES (CONT)
At TA = +25 C, VS = – 15V, unless otherwise noted.
)
s
µ
V
/
(
t
e
a
R
w
e
S
l
)
A
m
(
t
n
e
r
r
u
C
t
n
e
c
s
e
u
Q
i
1.0
0.8
0.6
0.4
0.2
SLEW RATE vs TEMPERATURE
OUTPUT CURRENT LIMIT vs TEMPERATURE
30
25
20
15
)
A
m
(
t
n
e
r
r
u
C
t
i
u
c
r
i
C
t
r
o
h
S
+|ICL|
–|ICL|
0
–75
–50
–25
25
0
50
Temperature (°C)
75
100
125
10
–40
–15
10
35
Temperature (°C)
60
85
QUIESCENT CURRENT vs TEMPERATURE
QUIESCENT CURRENT AND POWER DISSIPATION
vs POWER SUPPLY VOLTAGE
2.8
2.6
2.4
2.2
2.0
1.8
)
A
m
(
t
n
e
r
r
u
C
t
n
e
c
s
e
u
Q
i
2.6
2.5
2.4
2.3
2.2
2.1
2.0
–75
–50
–25
25
0
50
Temperature (°C)
75
100
125
0
±3
Power Dissipation
Quiescent Current
120
100
80
60
40
20
±6
±12
Power Supply Voltage (V)
±9
±15
0
±18
POSITIVE SIGNAL SWING vs TEMPERATUE (RL = 2kW
)
VS = ±15V
VS = ±11.4V
VS = ±2.25V
16
14
12
10
8
6
4
2
)
V
(
e
g
a
t
l
o
V
t
u
p
t
u
O
NEGATIVE SIGNAL SWING vs TEMPERATUE (RL = 2kW
)
VS = ±15V
VS = ±11.4V
VS = ±2.25V
–16
–14
–12
–10
–8
–6
–4
–2
)
V
(
e
g
a
t
l
o
V
t
u
p
t
u
O
0
–75
–50
–25
25
0
50
Temperature (°C)
75
100
125
0
–75
–50
–25
25
0
50
Temperature (°C)
75
100
125
®
INA114
6
)
W
m
(
n
o
i
t
i
a
p
s
s
D
i
r
e
w
o
P
TYPICAL PERFORMANCE CURVES (CONT)
At TA = +25 C, VS = – 15V, unless otherwise noted.
LARGE SIGNAL RESPONSE, G = 1
SMALL SIGNAL RESPONSE, G = 1
+10V
0
–10V
LARGE SIGNAL RESPONSE, G = 1000
SMALL SIGNAL RESPONSE, G = 1000
+10V
0
–10V
INPUT-REFERRED NOISE, 0.1 to 10Hz
0.1m V/div
+100mV
0
–200mV
+200mV
0
–200mV
1 s/div
7
INA114
®
APPLICATION INFORMATION
Figure 1 shows the basic connections required for operation
of the INA114. Applications with noisy or high impedance
power supplies may require decoupling capacitors close to
the device pins as shown.
The output is referred to the output reference (Ref) terminal
which is normally grounded. This must be a low-impedance
connection to assure good common-mode rejection. A resis-
tance of 5W
in series with the Ref pin will cause a typical
device to degrade to approximately 80dB CMR (G = 1).
SETTING THE GAIN
Gain of the INA114 is set by connecting a single external
resistor, RG:
G = 1 + 50 kW
R
G
(1)
Commonly used gains and resistor values are shown in
Figure 1.
The 50kW
term in equation (1) comes from the sum of the
two internal feedback resistors. These are on-chip metal film
resistors which are laser trimmed to accurate absolute val-
ues. The accuracy and temperature coefficient of these
resistors are included in the gain accuracy and drift specifi-
cations of the INA114.
The stability and temperature drift of the external gain
setting resistor, RG, also affects gain. RG’s contribution to
gain accuracy and drift can be directly inferred from the gain
equation (1). Low resistor values required for high gain can
make wiring resistance important. Sockets add to the wiring
resistance which will contribute additional gain error (possi-
bly an unstable gain error) in gains of approximately 100 or
greater.
NOISE PERFORMANCE
The INA114 provides very low noise in most applications.
For differential source impedances less than 1kW
, the INA103
may provide lower noise. For source impedances greater
than 50kW
, the INA111 FET-input instrumentation ampli-
fier may provide lower noise.
Low frequency noise of the INA114 is approximately
0.4m Vp-p measured from 0.1 to 10Hz. This is approximately
one-tenth the noise of “low noise” chopper-stabilized ampli-
fiers.
Pin numbers are
for DIP packages.
Over-Voltage
Protection
Over-Voltage
Protection
A1
A2
25kW
25kW
–
VIN
+
VIN
RG
2
1
8
3
0.1µF
V+
7
INA114
25kW
25kW
A3
25kW
25kW
+
–
VO = G • (VIN – VIN)
G = 1 + 50kW
RG
Load
+
VO
–
6
5
4
0.1µF
V–
Also drawn in simplified form:
–
VIN
+
VIN
RG
INA114
VO
Ref
DESIRED
GAIN
RG
(W
)
NEAREST 1% RG
(W
)
1
2
5
10
20
50
100
200
500
1000
2000
5000
10000
No Connection
No Connection
50.00k
12.50k
5.556k
2.632k
1.02k
505.1
251.3
100.2
50.05
25.01
10.00
5.001
49.9k
12.4k
5.62k
2.61k
1.02k
511
249
100
49.9
24.9
10
4.99
FIGURE 1. Basic Connections.
®
INA114
8
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