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E524.08(09) datasheet.pdf
Features
Applications
Ordering Information
General Description
Typical Operating Circuit
Functional Diagram
Pin Configuration
Pin Description
1 Absolute Maximum Ratings
2 ESD and Latch-up
2.1 ESD Protection
2.2 Latch-up
3 Recommended Operating Conditions
4 Electrical Characteristics
4.1 Power Supply
4.2 Frequency generation
4.3 Transducer driver
4.4 Receiver
4.5 Signal Processing
4.6 Temperature sensor
4.7 IO Interface
5 Functional Description
5.1 Overview
5.1.1 Ultrasonic distance measurement
5.1.2 Measurement cycle
5.1.3 Measurement modes
5.1.4 Interface
5.2 Power Supply
5.2.1 Analog supply
5.2.2 Digital supply
5.2.3 VSUP Watchdog
5.2.4 Power up sequence
5.2.5 Standby mode
5.3 Frequency generation
5.3.1 Oscillator frequency configuration
5.4 Transducer driver
5.4.1 Configuration
5.4.1.1 Burst frequency configuration
5.4.1.2 Driver current configuration
5.4.1.3 Burst length configuration
5.5 Receiver
5.5.1 Analog Amplifier
5.5.2 Analog to Digital Conversion (ADC)
5.6 Signal Processing
5.6.1 Digital Filter
5.6.1.1 Filter characteristics
5.6.2 Digital Amplifier and Sensitivity Time Control (STC)
5.6.3 Echo detection
5.6.3.1 Static threshold curve
5.6.3.2 Values of static threshold generation
5.6.3.3 Automatic threshold generation (ATG)
5.6.3.4 Noise measurement during SEND and RECEIVE command
5.6.3.5 Echo detection type
5.6.3.6 Echo peak detection during overdrive
5.6.4 Signal enhancement
5.6.4.1 Fast Time Constant (FTC)
5.6.4.2 Near Field Threshold Generation (NFTG)
5.6.4.3 Ringing time (RT)
5.6.5 Measurement time
5.7 Temperature sensor
5.8 Memory and device configuration
5.8.1 "Measurement Setup" and "Threshold Setup"
5.8.2 "Calibration Setup"
5.9 IO Interface
5.9.1 Exchange of commands
5.9.2 'SEND' and 'RECEIVE' Commands
5.9.2.1 'SEND_A' command
5.9.2.2 'SEND_B' and 'SEND_C' command
5.9.2.3 'RECEIVE_A' command
5.9.2.4 'RECEIVE_B' and 'RECEIVE_C' command
5.9.2.5 Status information after 'SEND' and 'RECEIVE' commands
5.9.3 'THRES_SETUP' command
5.9.4 'MEAS_SETUP' command
5.9.5 'READ_STATUS' command
5.9.6 'CAL_PULSES' command
5.9.7 'READ_TEMP'
5.9.8 'ENVELOPE_SEND_A' and 'ENVELOPE_REC_A' commands
5.9.9 EEPROM Programming
5.9.9.1 'CALIB_WRITE' Command
5.9.9.2 'CALIB_READ' command
5.9.9.3 'EE_COPY' Command
5.9.9.4 'EE_READ' Command
5.9.10 'READ_ID' command
5.9.11 'STANDBY' and 'WAKE_UP' command
6 Package Reference
7 Typical Applications
7.1 Typical Application Circuit E524.08
7.2 External Components E524.08
7.3 Typical Application Circuit E524.09
7.4 External Components E524.09
8 Marking
8.1 Top Side
8.2 Bottom Side
9 Reliability
9.1 EEPROM Data Retention
10 Abbreviations
11 General
11.1 WARNING - Life Support Applications Policy
11.2 General Disclaimer
11.3 Application Disclaimer
12 Contact Info
2nd Generation Ultrasonic Transducer Driver and Signal Processor
PRODUCT PREVIEW – Sep 17, 2015
L
E524.08 / E524.09
General Description
The device builds the core for a robust and easy-to-handle
distance measurement system, while offering flexibility for
customer applications.
TIA
N
E
FID
N
The received echo signal is amplified, converted and digitally
processed. Customized obstacle interpretation is feasible by
a variable detection threshold. A flexible IO protocol com-
bined with STC (Sensitivity time control), ATG (Automatic
threshold generation), NFTG (Near-field threshold genera-
tion), FTC algorithm and EPD (Echo peak detection) optimize
short and long range performance.
A driver unit stimulates the ultrasonic transducer via a center
tapped transformer. Driver frequency, transmitted burst
power and other parameters are user configurable.
Application relevant settings can be stored in EEPROM during
an End-Of-Line calibration by the customer. For evaluation
and debugging purposes, envelope and threshold data can be
read out via test mode and additionally the envelope data
can be read out via IO line as an analog curve.
O
Communication with the control unit is possible via 2-wire or
3-wire configuration. The E524.08 supports a bi-directional
communication via data modulation on the supply line. The
E524.09 supports a dedicated IO-line for data transfer.
n - C
Package
QFN20L4
QFN20L4
Features
• Bi-directional interface in 2-wire & 3-wire variants
• Programmable transducer frequencies between
30kHz and 83kHz
• Programmable driver power and receiver gain
• Excellent short & long range performance due to:
• Wide signal gain range
• Sensitivity time control
• Automatic threshold generation
• Near-field threshold generation
• Fast time constant algorithm
• Echo peak detection
• Flexible IO protocol
• Transducer diagnosis information
• Integrated temperature sensor
• Envelope readout via IO or testmode
• Embedded EEPROM for calibration data
• Chip ID for traceability
Applications
• Ultrasonic park assist systems (USPA, PAS, ...)
• Industrial distance measuring
Ordering Information
Temp. Range
Product ID
E524.08
-40°C to +105°C
-40°C to +105°C
E524.09
Interface
2-wire
3-wire
Typical Operating Circuit
ECU
TR1
CAIN1
I
2
N
A
C
I
N
A
R
D
T
R
D
T
C
Sensor module
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VSUP_DATA
E524.08
DRV1
GNDP
DRVS DRV2
GND
CSUP1
CSUP2
RSUP
DSUP
VTANK
VSUP
RTANK
CSUP3
AING
AINS
RIO_S
CIO
IO
VDDD
GNDD
VDDA
GNDA
ECU
Sensor module
D
T
R
D
T
C
TR1
CAIN1
I
2
N
A
C
I
N
A
R
Ultrasonic
transducer
DRV1
DRVS DRV2
AING
AINS
GNDP
VTANK
VSUP
RTANK
CSUP3
VSUP_LINE
RSUP
DSUP
GND
DATA
CSUP1
CSUP2
RPU
RIO_S
IO
CIO1
CIO2
E524.09
VDDD
GNDD
VDDA
GNDA
CVDDD
CVDDA
CVDDD
CVDDA
This document contains information on a product under development. Elmos Semiconductor AG reserves the right to change or discontinue this product without notice.
Elmos Semiconductor AG
QM-No.: 25DS0138E.00
ELMOS CONFIDENTIAL - created by LJW on 2015-11-13 11:05 - no redistribution allowed
L
2nd Generation Ultrasonic Transducer Driver and Signal Processor
PRODUCT PREVIEW – Sep 17, 2015
E524.08 / E524.09
Functional Diagram
VSUP
VTANK
DRV1
DRVS
DRV2
GNDP
Supply
Watchdog
VREG
analog
VREG
digital
VDDA
GNDA
VDDD
GNDD
Temp.
Sensor
ADC
o
h
c
E
n
o
i
t
c
e
t
e
d
Supply
Transducer Driver
CP
Memory
Control
l
a
r
e
TIA
N
E
FID
N
Frequency Generation
Receiver
AMP
C
D
A
g
D
t
l
i
F
t
i
i
AINS
AING
l
a
t
i
i
g
D
r
e
i
f
i
l
p
m
A
DSP
Signal Processing
O
n - C
20
K
N
A
T
V
19
S
V
R
D
18
1
V
R
D
17
P
D
N
G
16
2
V
R
D
21 EDP
QFN20L4 (top view)
I
D
T
7
K
C
T
8
S
M
T
9
N
E
M
T
10
O
D
T
6
JTAG Interface
TIN
TMEN
TCK TDI TDO TMS
VDDA
15
GNDA
14
AING
13
AINS
12
nc
11
IO
IO Interface
IDAC
Pin Configuration
2
1
IO
VSUP
o
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GNDD
VDDD
TIN
3
4
5
Elmos Semiconductor AG
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2nd Generation Ultrasonic Transducer Driver and Signal Processor
PRODUCT PREVIEW – Sep 17, 2015
E524.08 / E524.09
L
Type
S
Supply voltage
HV_A_IO Bidirectional interface
Description
TIA
N
E
FID
N
Digital ground
Internal digital supply voltage
JTAG test input, should be connected to PCB-GND in application
JTAG data output, should be connected to PCB-GND in application
JTAG data input, should be connected to PCB-GND in application
JTAG clock, should be connected to PCB-GND in application
JTAG test mode select, should be connected to PCB-GND in application
Test mode enable, should be connected to PCB-GND in application
not connected to device, should be connected to PCB-GND
Positive signal input
Negative signal input
Analog ground
Internal analog supply voltage
S
A_O
A_I
D_O
D_I
D_I
D_I
D_I
A_I
A_I
S
A_O
O
S
HV_A_O Driver output 2
Power ground
HV_A_O Driver output 1
HV_A_O Transformer center tap
Supply for transformer
Exposed die pad, has to be connected to PCB-GND
S
S
n - C
Note: A = Analog, D = Digital, S = Supply, I = Input, O = Output, B = Bidirectional, HV = High Voltage
IO
Name
VSUP
GNDD
VDDD
TIN
TDO
TDI
TCK
TMS
TMEN
Pin Description
No
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
nc
AINS
AING
GNDA
VDDA
DRV2
GNDP
DRV1
DRVS
VTANK
EDP
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Elmos Semiconductor AG
This document contains information on a product under development. Elmos Semiconductor AG reserves the right to change or discontinue this product without notice.
3/76
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2nd Generation Ultrasonic Transducer Driver and Signal Processor
PRODUCT PREVIEW – Sep 17, 2015
E524.08 / E524.09
1 Absolute Maximum Ratings
Stresses beyond these absolute maximum ratings listed below may cause permanent damage to the device. These are stress
ratings only; operation of the device at these or any other conditions beyond those listed in the operational sections of
this document is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliab-
ility. All voltages referred to VGND. Currents flowing into terminals are positive, those drawn out of a terminal are negative.
L
TIA
N
E
FID
N
Min Max
-0.3
36
40
-0.3
36
-0.3
-0.3
40
3.6
-0.3
Symbol
VSUP
VSUP
VDDD
VDDA
VIO
VIO
VD
VA
-1.5
-0.3
-0.3
-0.3
1.5
3.6
3.6
40
VDRV1, VDRV2,
VDRVS, VTANK
TAMB
TJ
TSTG,soldered
TSTG,unsoldered
-40
-40
-40
-40
105
125
125
35
Unit
V
V
V
V
V
V
V
V
V
°C
°C
°C
°C
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Description
Condition
t < 500 ms
t < 500 ms
O
n - C
without tape,
soldered to PCB
unsoldered
Table 1-1: Absolute Maximum Ratings Table
No.
1
2
3
4
5
6
7
8
9
Supply voltage
Supply voltage
Voltage at pin IO
Voltage at pin IO
Voltage at digital pins
(TCK, TDO, TDI, TMS, TMEN) and TIN
Voltage at analog pins
(AINS, AING)
Internal digital supply voltage
Internal analog supply voltage
Voltage at pins DRV1, DRV2, DRVS and VTANK
10 Ambient temperature
11 Junction temperature
12 Storage temperature soldered
13 Storage temperature unsoldered in tape
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Elmos Semiconductor AG
2nd Generation Ultrasonic Transducer Driver and Signal Processor
PRODUCT PREVIEW – Sep 17, 2015
E524.08 / E524.09
2 ESD and Latch-up
2.1 ESD Protection
Table 2.1-1: ESD Conditions
Description
Condition
ESD HBM protection at pins VSUP and IO
ESD HBM protection at all other pins
ESD CDM protection at pins near corners
(Pins 1,5,6,10,11,15,16,20)
ESD CDM protection at all other pins
1) According to AEC-Q100-002 (HBM) chip level test
2) According to AEC-Q100-011 (CDM) chip level test
1)
1)
2)
2)
2.2 Latch-up
Latch-up performance is validated according JEDEC standard JESD 78 in its valid revision.
L
Symbol
VESD(HBM)
VESD(HBM)
VESD(CDM)C
VESD(CDM)
Min
-4
-2
-750
TIA
N
E
FID
N
-500
Max
4
2
750
500
Unit
kV
kV
V
V
O
n - C
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2nd Generation Ultrasonic Transducer Driver and Signal Processor
PRODUCT PREVIEW – Sep 17, 2015
E524.08 / E524.09
3 Recommended Operating Conditions
Table 3-1: Recommended Operating Conditions
No.
1
2
3
4
5
Description
Condition
Supply voltage
EEPROM programming voltage at pin IO
DC input voltage at pins AINS and AING
Current into pins AINS and AING
Transducer driver frequency
L
Unit
V
V
V
mA
kHz
Symbol
VSUP
VPROG
VAINS/VAING
IAINS/IAING
fDRV
25
Min
6
23
-1.0
-20
38
Typ Max
18
27
1.0
20
72
TIA
N
E
FID
N
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O
n - C
o
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Elmos Semiconductor AG
2nd Generation Ultrasonic Transducer Driver and Signal Processor
PRODUCT PREVIEW – Sep 17, 2015
E524.08 / E524.09
L
TIA
N
E
FID
N
Typ Max
4.5
-
3.3
IVDDA_SHORT
VDDD
Min
-
-
3.1
IVSUP_STBY
VDDA
Symbol
-55
3.1
-
3.3
IVSUP
IVDDD_SHORT
VSUPPOR
-55
-
-
-
1
3.5
-
3.5
-
4.5
tD_IO
tD_WAKEUP
VSUPUV_L
VSUPOV_H
-
-
4.7
19.5
260
800
-
5.0
21
2
5.3
22.5
Unit
mA
mA
V
mA
V
mA
V
μs
ms
V
V
Condition
@ TAMB=25°C
Symbol
fOSC
TCf_OSC
Min
11.94
-450
Typ Max
12.0
-300
Unit
12.06 MHz
ppm/K
-150
4 Electrical Characteristics
• VVSUP = +6V to +18V,
• TAMB = -40°C to +105°C, unless otherwise noted.
• Typical values are at VVSUP = 12V and TAMB = +25°C.
• Positive currents flow into the device pins.
• All time values are based on the typical oscillator frequency fOSC,typ.
4.1 Power Supply
Table 4.1-1: Supply and POR - Electrical Parameters
No.
1
2
3
Description
Current consumption at VSUP
Current consumption at VSUP in standby mode
Internal generated analog supply
Condition
t>tD_nom
external CVDDA con-
nected
4
5
6
7
8
9
Current out of VDDA in case of short to GND
Internal generated digital supply
Current out of VDDD in case of short to GND
Level at VSUP: threshold from operation mode
to reset state
Start-up time until communication via IO is
possible*)
Delay time until full functionality after wake
up*)
external CVDDD con-
nected
O
VSUP≥10V
n - C
10 VSUP undervoltage detection low level
11 VSUP overvoltage detection high level
*) Not tested in production
Description
*) Not tested in production
4.2 Frequency generation
Table 4.2-1: Oscillator - Electrical Parameters
No.
1 Oscillator frequency
2
Temperature coefficient of oscillator*)
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L
-
-
IDRV,31
354
Min
-
Symbol
IDRV,0
Typ Max
168
TIA
N
E
FID
N
NIDRV
IDRV,INC
RPD,DRVS
31
6
5
-
-
15
RSW,DRV1,2
1.2
-
-
-
-
2
-
2
1/399
fDRV
1/144
Symbol
GANA_MIN
GANA_MAX
ΔGANA
NG_ANA
RIN
Min
33
47
-
-
75
Typ Max
39
36
53
50
2
-
7
-
125
100
Unit
mA
mA
-
mA
kΩ
Ω
fOSC
Unit
dB
dB
dB
kΩ
eN
-
3.8
-
nV/
I_DRV=0
VDRVS=2.5V
I_DRV=31
VDRVS=2.5V
VDRVS=0.2V
Receive Mode
Burst Mode
to be adjusted by
F_DRV
O
Condition
@ fDRV=58 kHz
@ fDRV=58 kHz
@ fDRV=58 kHz
n - C
VAINS≤0.1 V,
VAING≤0.1 V
@ fDRV=58 kHz /
max gain
4.3 Transducer driver
Table 4.3-1: Transducer driver - Electrical Parameters
No.
1
2
3
4
5
Lowest selectable driver current
Highest selectable driver current
Number of steps for driver current adjustment
Increment of driver current
Pull down resistor at pin DRVS
6 On resistance of driver switches SWDRVX
7
Transducer driver frequency
4.4 Receiver
Table 4.4-1: Analog Amplifier - Electrical Parameters
Description
No.
1 Minimum gain of analog input amplifier
2 Maximum gain of analog input amplifier
3
4
5
Step size of analog gain1)
Number of steps
Input Impedance
AINS to GNDA
AING to GNDA
Noise Level*)
6
*) Not tested in production
1) monotony guaranteed by design
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Elmos Semiconductor AG
2nd Generation Ultrasonic Transducer Driver and Signal Processor
PRODUCT PREVIEW – Sep 17, 2015
E524.08 / E524.09
Description
Condition
This document contains information on a product under development. Elmos Semiconductor AG reserves the right to change or discontinue this product without notice.
8/76
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