Galaxy A70的国行版本SM-A7050_SVC_MANUAL包含一二三级维修指南(三星 A70（A7050）).pdf-资料库

Mobile Device SM-A7050 CONTENTS 1. Safety Precautions 2. Specification 3. Product Function 4. Exploded View and Parts list 5. MAIN Electrical Parts List 6. Level 1 Repair 7. Level 2 Repair 8. Level 3 Repair 9. Reference Abbreviation 4. 2 Notice: All functionality, features, specifications, and other product information provided in this document, including but not limited to, benefits, design, pricing, components, performance, availability, and capabiliti-es of the product are subject to change without notice. Samsung reserves the right to alter this doc-ument or the product described herein at anytime, without obligation to provide notification of such changes.

1. Safety Precautions 1-1. Repair Precaution Before attempting any repair or detailed tuning, shield the device from RF noise or static electricity discharges. Use only demagnetized tools that are specifically designed for small electronic repairs, as most electronic parts are sensitive to electromagnetic forces. Use only high quality screwdrivers when servicing products. Low quality screwdrivers can easily damage the heads of screws. Use only conductor wire of the properly gauge and insulation for low resistance, because of the low margin of error of most testing equipment. We recommend 22-gauge twisted copper wire. Hand-soldering is not recommended, because printed circuit boards (PCBs) can be easily damaged, even with relatively low heat. Never use a soldering iron with a power rating of more than 100 watts and use only lead-free solder with a melting point below 250°C (482°F). Prior to disassembling the battery charger for repair, ensure that the AC power is disconnected. Always use the replacement parts that are registered in the SEC system. Third-party replacement parts may not function properly.

1. Safety Precautions 1-2. ESD(Electrostatically Sensitive Devices) Precaution Many semiconductors and ESDs in electronic devices are particularly sensitive to static discharge and can be easily damaged by it. We recommend protecting these components with conductive anti-static bags when you store or transport them. Always use an anti-static strap or wristband and remove electrostatic buildup or dissipate static electricity from your body before repairing ESDs. Ensure that soldering irons have AC adapter with ground wires and that the ground wires are properly connected. Use only desoldering tools with plastic tips to prevent static discharge. Properly shield the work environment from accidental electrostatic discharge before opening packages containing ESDs. The potential for static electricity discharge may be increased in low humidity environments, such as air-conditioned rooms. Increase the airflow to the working area to decrease the chance of accidental static electricity discharges.

2. Specification 2-1. GSM General Specification Item GSM 850 EGSM 900 DCS1800 PCS1900 Freq. Band[MHz] Uplink/Downlink 824~849 869~894 880~915 925~960 1710~1785 1805~1880 1850~1910 1930~1990 ARFCN range 128~251 0~124 & 975~1023 512~885 512~810 Tx/Rx spacing 45MHz 45MHz 95MHz 80MHz Mod. Bit rate/ 270.833kbps 270.833kbps 270.833kbps 270.833kbps Bit Period 3.692us 3.692us 3.692us 3.692us Time Slot Period/ 576.9us Frame Period Modulation GSM/ EGPRS 4.615ms GMSK/ 8PSK 576.9us 4.615ms GMSK/ 8PSK 576.9us 4.615ms GMSK/ 8PSK 576.9us 4.615ms GMSK/ 8PSK MS Power 33dBm~5dBm 33dBm~5dBm 30dBm~0dBm 30dBm~0dBm Power Class 4(GMSK) E2(8PSK) 4(GMSK) E2(8PSK) 1(GMSK) E2(8PSK) 1(GMSK) E2(8PSK) Sensitivity -102dBm -102dBm -100dBm -100dBm TDMA Mux 8 8 8 8

2. Specification 2-2. GSM Tx Power Class TX Power control level GSM850 TX Power control level EGSM900 TX Power control level DCS1800 TX Power control level PCS1900 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 - 33±2 dBm 31±2 dBm 29±2 dBm 27±2 dBm 25±2 dBm 23±2 dBm 21±2 dBm 19±2 dBm 17±2 dBm 15±2 dBm 13±2 dBm 11±3 dBm 9±3 dBm 7±3 dBm 5±3 dBm - 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 - 33±2 dBm 31±2 dBm 29±2 dBm 27±2 dBm 25±2 dBm 23±2 dBm 21±2 dBm 19±2 dBm 17±2 dBm 15±2 dBm 13±2 dBm 11±3 dBm 9±3 dBm 7±3 dBm 5±3 dBm - 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 30±3 dBm 28±3 dBm 26±3 dBm 24±3 dBm 22±3 dBm 20±3 dBm 18±3 dBm 16±3 dBm 14±3 dBm 12±4 dBm 10±4 dBm 8±4 dBm 6±4 dBm 4±4 dBm 2±5 dBm 0±5 dBm 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 30±3 dBm 28±3 dBm 26±3 dBm 24±3 dBm 22±3 dBm 20±3 dBm 18±3 dBm 16±3 dBm 14±3 dBm 12±4 dBm 10±4 dBm 8±4 dBm 6±4 dBm 4±4 dBm 2±5 dBm 0±5 dBm

2. Specification 2-3. WCDMA General Specification Item WCDMA2100(B1) WCDMA1900(B2) WCDMA850(B5) WCDMA900(B8) Freq. Band[MHz] Uplink/Downlink 1920~1980 2110~2170 1850~1910 1930~1990 824~849 869~894 880~915 925~960 ARFCN range UL：9612~9888 UL：9262~9538 UL：4132~4233 UL：2712~2868 DL：10562~10838 DL：9662~9938 DL：4357~4458 DL：2937~3088 Tx/Rx spacing 190MHz 80MHz 45MHz 45MHz Mod. Bit rate/ Bit Period Time Slot Period/ Frame Period Modulation MS Power (dBm) 42.2Mbps(DL) 5.42Mbps(UL) 42.2Mbps(DL) 5.42Mbps(UL) 42.2Mbps(DL) 5.42Mbps(UL) 42.2Mbps(DL) 5.42Mbps(UL) W C D M A 10ms/0.667ms H S P A 2ms/0.667ms Q P S K 1 6 Q A M 6 4 Q A M W C D M A 10ms/0.667ms H S P A 2ms/0.667ms Q P S K 1 6 Q A M 6 4 Q A M W C D M A 10ms/0.667ms H S P A 2ms/0.667ms Q P S K 1 6 Q A M 6 4 Q A M W C D M A 10ms/0.667ms H S P A 2ms/0.667ms Q P S K 1 6 Q A M 6 4 Q A M 25.7 ~ -49(↓) 25.7 ~ -49(↓) 25.7 ~ -49(↓) 25.7 ~ -49(↓) Power Class 3(max+24dBm) 3(max+24dBm) 3(max+24dBm) 3(max+24dBm) Sensitivity -106dBm -104dBm -104dBm -103dBm

2. Specification 2-4. LTE General Specification Item LTE Band1 LTE Band3 LTE Band5 LTE Band7 LTE Band8 LTE Band28 [SM-A7050_SEA] Freq. Band[MHz] 1920~1980 1710~1785 824~849 2500~2570 880~915 703~748 Uplink/Downlink 2110~2170 1805~1880 869~894 2620~2690 925~960 758~803 ARFCN range Tx/Rx spacing (MHz) Channel Bandwidth (MHz) Modulation UL:18000~18599 UL:19200~19949 UL:20400~20649 UL:20750~21449 UL:21450-21799 UL:27210~27659 DL:0~599 DL:1200~1949 DL:2400~2649 DL:2750~3449 DL:3450-3799 DL:9210~9659 190 95 45 120 45 55 5/10/15/20 1.4/3/5/10/15/20 1.4/3/5/10 5/10/15/20 1.4/3/5/10 3/5/10/15/20 QPSK,16/64QAM QPSK,16/64QAM QPSK,16/64QAM QPSK,16/64QAM QPSK,16/64QAM QPSK,16/64QAM 256QAM(DL only) 256QAM(DL only) 256QAM(DL only) 256QAM(DL only) 256QAM(DL only) 256QAM(DL only) MS Power (dBm) 25.7~-39(↓) 25.7~-39(↓) 25.7~-39(↓) 25.7~-39(↓) 25.7~-39(↓) 25.7~-39(↓) Sensitivity(QPSK, BW 10MHz) -96.3 -93.3 -94.3 -94.3 -93.3 -94.8 (dBm) Item Freq. Band[MHz] Uplink/Downlink LTE Band34 LTE Band38 LTE Band39 LTE Band40 LTE Band41 2010 ~ 2025 2570~2620 1 8 8 0 ~ 1 9 2 0 2300~2400 2 5 5 5 ~ 2 6 5 5 ARFCN range UL/DL: 3 6 2 0 0 ~ 3 6 3 4 9 UL/DL :37750 ~ 38249 UL/DL: 3 8 2 5 0 ~ 3 8 6 4 9 UL/DL: 38650 ~ 39649 UL/DL: 4 0 2 4 0 ~ 4 1 1 4 0 Tx/Rx spacing (MHz) 0 0 0 0 0 Channel Bandwidth (MHz) Modulation 5/10/15/20 5/10/15/20 5/10/15/20 5/10/15/20 5/10/15/20 QPSK,16/64QAM QPSK,16/64QAM QPSK,16/64QAM QPSK,16/64QAM QPSK,16/64QAM 256QAM(DL only) 256QAM(DL only) 256QAM(DL only) 256QAM(DL only) 256QAM(DL only) MS Power (dBm) 25.7~-39(↓) 25.7~-39(↓) 25.7~-39(↓) 25.7~-39(↓) 25.7~-39(↓) Sensitivity(QPSK, BW 10MHz) (dBm) -96.3 -96.3 -96.3 -96.3 -96.3

2. Specification 2-5. TDSCDMA General Specification Item TDSCDMA2010(B34) TDSCDMA1880(B39) Chip rate 1.28 Mcps 1.28 Mcps OBW 1.6 MHz 1.6 MHz Freq. Band[MHz] Uplink/Downlink 2010~2025 1880~1920 ARFCN range 10054~10121 9404~9596 Tx/Rx spacing (MHz) MS Power (dBm) - - 24 ~ -48(↓) 24 ~ -48(↓) Power Class 2(max+24dBm) 2(max+24dBm) Sensitivity (dBm /1.28 MHz) -110 -110

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Galaxy A70的国行版本SM-A7050_SVC_MANUAL包含一二三级维修指南(三星 A70（A7050）).pdf

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