2 
IEEE  TRANSACTIONS  ON  ANTENNAS  AND  PROPAGATION, VOL. "-29,  NO.  1, JANUARY  1981 
Microstrip  Antenna  Technology 
KEITH R. CARVER, MEMBER, IEEE,  AND JAMES w. MINK, MEMBER,  IEEE 
with  the  relation 
resonant  freqnency  of 
Absfruct-A  survey  of  microstrip  antenna  elements  is  presented, 
with  emphasis  on  theoretical  and  practical  design  techniques. 
Available  substrate  materials  are  reviewed  along 
between  dielectric  constant  tolerance  and 
microstrip  patches.  Several  theoretical  analysis  techniques  are 
summarized,  including  transmission-line 
and  modal-expansion 
(cavity) techniques as well as numerical  methods  such as the method of 
moments  and  fmite-element  techniques.  Practical  procedures 
are 
given for both  standard  rectangular  and  circular  patches,  as well  as 
variations  on those designs  including  circularly  polarized  microstrip 
patches.  The  quality,  bandwidth,  and  efficiency  factors 
of  typical 
patch  designs  are  discussed.  Microstrip  dipole  and 
conformal 
antennas are summarized.  Finally,  critical  needs for fnrther research 
and  development for this  antenna  are  identified. 
T 
INTRODUCTION 
HE  PURPOSES of  this  paper are to describe  analytical  and 
experimental  design  approaches  for  microstrip  antenna 
the  state 
for  the  current 
provide  a  reference 
review  of 
as  it  affects  the 
describes  several 
of 
relatively  new 
of 
to  a  les- 
This 
elements,  and  to provide  a  comprehensive  survey  of  the  state 
of  microstrip  antenna  element  technology.  A  companion 
paper  [ 1 ]  discussed  microstrip  array  design  techniques.  Taken 
together,  these  papers 
state  of  development  of  microstrip  elements  and  arrays 
elements  at  a  time  when  advancements  in  this 
technology  are  being  reported  primarily  in  a  wide  variety 
technical  reports  and  private  communications,  and 
ser  extent  in  this  TRANSACTIONS  and  other  journals. 
paper  begins  with  a 
materials  technology 
antennas,  and  then 
to  the  analysis  of  rectangular  and  circular 
patches, as  well  as 
patches  of  other  shapes  and  microstrip  dipoles.  Design  curves 
are  presented  for  both  rectangular  and  circular  patch  shapes, 
and  for 
A  dis- 
cussion  of  the  bandwidth  and  efficiency  of  the  elements  is 
presented  with  the  patch  size, shape,  substrate  thickness,  and 
material  properties  as  parameters.  Several  practical  techniques 
are  outlined  for  modifying 
as  conformal  arrays,  feeds  for  dishes, 
purpose  applications 
dual-frequency  communication  systems,  etc.  The  paper  con- 
cludes  with  suggestions  for  future  critical  needs  in the  further 
development of the  antenna. 
design  of  microstrip 
theoretical  approaches 
linearly  and  circularly  polarized  elements. 
the basic  element  for  such  special 
of  printed  circuit 
The  microstrip  antenna  concept  dates 
back  about  26 
years to work  in  the  U.S.A.  by  Deschamps  [ 21  and  in  France 
by  Gutton and  Baissinot  [ 3 ] .  Shortly  thereafter,  Lewin  [ 991 
investigated radiation  from  stripline  discontinuities.  Additional 
studies  were  undertaken  in  the  late 
studied basic  rectangular  and  square  configurations.  However, 
other  than  the 
original  Deschamps 
1960's  by  Kaloi,  who 
report,  work 
was  not 
Manuscript  received  March 5, 1980; revised  July 22, 1980. 
K. R.  Carver is with the  Physical  Science  Laboratory, New  Mexico 
J.  W. Mink  is  with  the  U.S. Army  Research  Office,  Research  Tri- 
State  University, Las Cruces, NM 80003. 
angle Park, NC 27709. 
early  1970's,  when  a  con- 
was  patented  by  Munson 
and  several-wavelength  long 
reported  in  the  literature  until  the 
ducting  strip  radiator  separated  from  a  ground  plane  by  a 
[4]. This  half- 
dielectric  substrate  was  described  by  Byron 
wavelength  wide 
strip  was  fed 
by  coaxial  connections  at  periodic  intervals  along  both  radiat- 
ing edges,  and  was  used  as  an array  for  Project Camel. Shortly 
thereafter,  a  microstrip  element 
[SI  and  data  on  basic  rectangular  and  circular  microstrip 
[ 6 ] .  Weinschel  [7]  de- 
patches  were  published  by  Howell 
veloped  several  microstrip  geometries 
for use  with  cylindrical 
S-band  arrays  on rockets.  Sanford  [ 81 showed that  the micro- 
strip  element  could  be  used 
in  conformal  array  designs  for 
L-band  communication  from  a  KC-135  aircraft  to  the  ATS-6 
satellite.  Additional  work  on basic  microstrip  patch  elements 
was  reported  in  1975  by  Garvin  et  d .   [ 91,  Howell  [ 101, 
Weinschel  [ 111,  and  Janes  and  Wilson  [ 121.  The  early  work 
by  Munson  on  the development  of  microstrip  antennas for use 
on  rockets  and  mis- 
as  low-profie  flush-mounted  antennas 
siles showed that this  was a  practical  concept  for use in many 
antenna  system  problems,  and  thereby 
gave  birth  to  a  new 
antenna  industry. 
Mathematical  modeling 
of  the  basic  microstrip  radiator 
[ 131,  [ 141.  The  radiation  pattern 
of  transmission- 
the  center 
of  a 
was  initially  carried  out  by  the  application 
line  analogies  to  simple  rectangular  patches  fed  at 
of  a  radiating  wall 
circular  patch  was  analyzed  and  measurements  reported  by 
Carver  [ 151.  The  first  mathematical  analysis  of  a  wide  variety 
of  microstrip  patch  shapes  was published  in  1977  by Lo e t  d .  
[ 161,  who  used  the. modal-expansion  technique 
to  analyze 
rectangular,  circular,  semicircular,  and  triangular  patch  shapes. 
Similar  comprehensive  reports on advanced  analysis techniques 
were  published  by  Derneryd 
[ 141,  [ 171,  Shen  and 
Long 
[ 181,  and  Carver  and  Coffey 
[ 191.  By  1978  the  microstrip 
patch  antenna  was  becoming  much  more  widely  known  and 
used  in  a  variety 
companied  by  increased  attention 
munity  to  improved  mathematical  models 
used  for  design.  In 
October  1979,  the 
meeting  devoted 
designs,  array  configurations, 
held  at  New  Mexico  State  University  (NMSU),  Las  Cruces, 
under  cosponsorship  of 
NMSU's Physical  Science Laboratory  [ 201. 
was  ac- 
by  the  theoretical  com- 
to  microstrip  antenna  materials,  practical 
of  communication  systems.  This 
the  U.S.  Army  Research  Office 
first  international 
and  theoretical 
models  was 
which  could  be 
and 
The  terms  stripline  and  microstrip  are  often  encountered 
in  the  literature,  in  connection  with  both  transmission  lines 
and  antennas.  A  stripline  or  triplate  device is  a  sandwich  of 
three  parallel  conducting  layers  separated 
di- 
electric  substrates,  the  center  conductor of which  is  analogous 
to  the  center  conductor  of  a  coaxial  transmission  line.  If  the 
to a  resonant  slot  cut orthogonally 
center  conductor  couples 
in  the  upper  conductor,  the 
device is  said  to  be  a  stripline 
on  this 
radiator  [ 21.1.  Although  there  are  many  variations 
printed-circuit  stripline  slot  antenna,  these  are  outside 
the 
scope of this  paper  and will not  be  considered  further. 
by  two  thin 
By  contrast  a  microstrip  device  in 
its  simplest  form  con- 
0018-926X/81/0100-0002$00.75  0 1981  IEEE 
MICROSTRIP 
CARVER AND MINK: 
 
ANTENNA TECHNOLOGY 
3 
GROUND 
PLANE 
TOP 
VIEW 
TOP 
VIEW 
Fig.  1. 
(a)  Rectangular microstrip  patch  antenna.  (b) Circular  micro- 
(d) Micro- 
strip  patch  antenna.  (c)  Open-circuit  microstrip  radiator. 
strip  dipole  antenna. 
or  circular  patch,  a  resonant 
sists of  a  sandwich  of  two parallel conducting  layers  separated 
by  a  single thin  dielectric  substrate [ 221.  The  lowfr  conductor 
functions as  a  ground  plane,  and  the  upper  conductor  may  be 
a  simple  resonant  rectangular 
dipole,  or a  monolithically  printed  array  of  patches  or dipoles 
and  the  associated  feed  network.  Since  arrays  of  microstrip 
patches  and  dipoles  were  considered  in 
the  companion  article 
on microstrip  arrays  [ 11 , this  paper  will  concentrate  on  basic 
microstrip  patches  and  dipoles.  Fig.  1  shows  a  representative 
collection  of  microstrip  patch  and  dipole  shapes  and  their 
associated  dielectric 
microstrip  antennas  have  been  developed  for  use  from 
MHz  to  38  GHz, and  it  can  be  expected  that  the  technology 
will  soon  extend  to  60  GHz  and  beyond. 
coupling  between  microstrip  elements 
where in  [ 88 ] , it will not  be discussed in  this  paper. 
Since  mutual 
is  considered  else- 
substrates  and  ground 
planes.  Practical 
400 
11. MATERIALS FOR  PRINTED  CIRCUIT ANTENNAS 
The  propagation  constant  for  a 
wave  in  the  microstrip 
to predict  the 
resistance,  and  other  antenna 
substrate  must  be  accurately  known  in  order 
resonant  frequency,  resonant 
quantities.  Antenna  designers  have  found  that  the  most 
sensitive parameter  in  microstrip  antenna  performance  estima- 
tion  is  the  dielectric  constant  of  the  substrate  material,  and 
that  the  manufacturer’s  tolerance  on  E,  is  sometimes  inade- 
quate. 
The  change  in  operating  frequency 
microstrip  antenna  due  solely 
change  of  the  substrate  dielectric  constant  may  be 
as 
of  a  thin  substrate 
to  a  small  tolerance-related 
expressed 
of  a  microstrip  antenna 
where  fo  is  the  resonant  frequency 
assuming  a  magnetic wall boundary  condition, E,  is the relative 
Sf is  the  change  in 
dielectric  constant, 
resonant  frequency, 
and  & E ,   is  the  change  in  relative  dielectric 
constant.  For 
example,  if  the  operating  frequency  of  the  antenna  is  to be 
predicted  to  k0.5  percent  using  E,  = 2.55,  the  required  ac- 
curacy  is  & E ,   = 0.025.  However  a 
of  this  type  is  8 ~ ,  = k0.04. 
constant  accuracy  for  materials 
The  relative  frequency  change  for  small  dimensional  changes 
may  be  expressed  in  terms of  linear  dimensions or  in  terms of 
temperature changes  as  follows: 
typical  quoted  dielectric 
where  a, is  the  thermal  expansion  coefficient, 
T  is the tem- 
ature  in degrees  Celsius,  2  is the  frequencydetermining  length 
of  the  microstrip  antenna.  An  uncertainty  of  less  than  0.5 
percent  in  the  operating  frequency  with  a  temperature 
varia- 
tion  of  100°C  would  require 
ficient  a,  to  be  less  than  50  X  10-6/oC.  Commonly 
materials  are  adequate  in  terms 
thickness  variation  in  the  substrate  material  can  have  an 
effect  upon  the  operating  frequency,  this  factor 
is much less 
important  than  the  dielectric  constant  tolerance. 
With  this 
background  one  can  determine  the  suitability  of  various  di- 
electric  materials for use  in printed  circuit  antennas. 
used 
of  thermal  expansion.  While 
the  thermal  expansion  coef- 
Available  Microwave  Substrates 
There  are  many  substrate 
materials  on  the  market  today 
because  of  a  wide  range  of  available 
sizes.  For  Woven  web  materials,  thick- 
with  dielectric  constants  ranging  from 1.17 to  about  25  and loss 
tangents  from 0.0001 to  0.004[  10214 1041.  Comparative  data 
on  most  substrates (2.1 < E ,   < 25)  are  given  in  Table  I  [ 23 1, 
[ 241.  Polytetrafluoroethylene  (PTFE)  substrates  reinforced 
with  either glass woven  web or glass random  fiber are  very  com- 
monly  used  because  of  their  desirable  electrical  and  mechan- 
ical  properties,  and 
thicknesses  and  sheet 
nesses  range  from  0.089  mm  to  12.7  mm  and  sheet 
sizes up 
to 9 1.4  cm  X  9 1.4  cm. Glass random  fiber is available in  thick- 
sizes up to 
nesses  from  0.508  mm 
40.64  cm  x  10 1.6 cm.  The  discontinuous  nature  of  the  fiber 
and  the  relatively  soft  and  deformable  polymer  matrix  allow 
one  to  form  this  material 
relief 
may  be  accelerated  by  heating  the material. Also, this  material 
is  available  in  shapes 
as  rods  or  cyl- 
high  dielectric  constants, 
inders.  For  applications  requiring 
(9.7  < E,  < 10.3)  are  frequently 
alumina  ceramic  substrates 
(E,  = 
used.  Typical  commercially  available  substrates  are  K-6098 
teflon/glass  cloth 
2.2),  and  Epsilam-10  ceramic-filled  teflon ( E ,  
( E ,   Z  2.5),  RT/duroid-5880  PTFE 
on  complex  surfaces.  Stress 
to 3.175  mm  and  in  sheet 
other  than  sheets,  such 
IO). 
Anisotropy 
In  order  to  obtain  the 
necessary  mechanical 
properties 
of  PTFE,  fill  materials  are introduced into the  polymer  matrix 
[ 231,  1241. This fill material is commonly glass fiber  although 
it  may  also  be  a  ceramic.  In  either 
case these filler  materials 
take  on  preferred  orientations  during  the  manufacturing 
process.  Composites  containing  fibrous  reinforcement 
ma- 
terial  oriented  in  the piane  of  the  sheet  will  show  a  depend- 
ence  of  the dielectric  constant  on  the electric field orientation 
with  a  higher  value  for electric  fields in the plane  of the  sheet 
4 
JEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION,  VOL. AP-29, NO.  1, JANUARY  1981 
AN  OVERVIEW OF MAJOR  MICROWAVE SUBSTRATES  (AFTER [23]) 
TABLE I 
(X-Band) 
 
(X-Band) 
 
Product 
PTFE unreinforced 
PTFE glass  woven  web 
PTFE glass random  fiber 
FTFE quartz  reinforced 
Cross linked poly  styrene/ 
woven quartz 
Cross  linked  poly  styrene/ 
ceramic  powder-filled 
Cross  linked  poly  styrene/ 
glass reinforced 
Irradiated  polyolefin 
Irradiated  polyolefin/ 
glass reinforced 
Polyphenylene  oxide  (PPO) 
Saicone  resion  ceramic 
powder-filled 
Sapphire 
Alumina  ceramic 
Glass bonded mica 
Hexcell  (laminate) 
Air with/rexolite  standoffs 
Fused quartz 
Er 
2.10 
2.17 
2.33 
2.45 
2.55 
2.17 
2.35 
2.47 
2.65 
3 to 15 
2.62 
2.32 
2.42 
2.55 
3 to 25 
9.0 
9.7 to 10.3 
7.5 
1.17 to 1.40 
at  1.4 GHz 
3.78 
tan6 
0.0004 
0.0009 
0.0015 
0.0018 
0.0022 
0.0009 
0.0015 
0.0006 
0.0005 
from 0.00005 
to 0.0015 
0.001 
0.0005 
0.001 
0.00016 
from 0.0005 
0.0001 
0.0004 
0.0020 
- 
0.001 
Dimensional 
 Temperature 
poor 
excellent 
very  good 
fair 
excellent 
good 
fair 
good 
poor 
fair 
poor 
fair to 
medium 
excellent 
excellent 
excellent 
excellent 
excellent 
"C 
-21  to +260 
-27  to +260 
-27  to +260 
-21  to +260 
-21  to +260 
-21  to +260 
-27  to +110 
-21  to +110 
-27  to +lo0 
-27  to +lo0 
-27  to +193 
-27  to +268 
-24  to +371 
to 1600 
unclad 
-27  to +593 
-27  to +260  . 
unclad 
- 
TYPICAL  DIELECTRIC  CONSTANT VERSUS MAJOR  AXIS  ORIENTATION OF THE  ELECTRIC FIELD 
TABLE 11 
(Percent) 
 
Value 
Direction 
 
Direction 
Direction 
 
 
X 
fiber 
PTFE 
2.347 
Random 
 
Ceramic PTFE 
Glass cloth PTFE 
 
2.432 
 
2.454 
10.68 
2.88 
2.4 
Y 
2 
Quoted 
- 
6 Er 
Er 
10.70 
2.88 
 
10.40 
3 
2.35 f 0.04 
10.5 f 0.25 
 2.4 
2.45 f 0.04 
1.7 
1.6 
is  a  function  of  the  difference  in  dielectric 
than  when  the  field  is transverse to  the sheet.  The magnitude 
of  this  effect 
constants  between  the  fiber  orientation  and  the  volume  ratio 
of  the  fiber  to  polymer.  Typical  examples 
of  this  effect  are 
shown  in  Table 11. 
As  one  can  see  from  Table  11, the  value  of  the dielectric 
is essentially  the value 
constant  quoted  by  the  manufacturer 
for  the  case  where 
is  perpendicular  to  the 
the  electric  field 
sheet.  Usually  this  orientation  of  the electric field  is the  one 
needed  for  antenna  engineers.  However, 
the  designer  needs 
to  insure  the  proper 
to  be  aware  of  this  material  property 
operation  of  the  antenna  system  or  for  the  proper  interpre- 
tation  of  material  measurements.  In 
dielectric  constant  measurements  are  typically  made  using 
stripline  resonator  techniques. 
around  the  strip,  there 
the  measurements.  The  dielectric  constant 
substrate  materials  tends 
ature as shown  in  Fig.  2. For  this  material  the average  change 
in  dielectric  constant  over 
to 
to  decrease  with  increasing  temper- 
is  an  uncertainty  associated  with 
the  temperature  range  -75'C 
Because  of  fringing  fields 
the  microwave  region, 
is  about  C ~ E  = 96  ppm/'C.  An  abrupt  transition 
+100'C 
change  of  about 6 e  = 0.01 1,  which  occurs  at  a  temperature 
2OoC,  is  characteristic  of  PTFE-based 
between  zero  and 
materials.  The  exact  temperature  at  which  this 
change  occurs 
is a  function of  the  rate  at  which  the  temperature is changing. 
Over  the  temperature  range  of  -75'C 
to  100°C  the  relative 
change  in  operating  frequencies  is  about  0.8  percent  due  to 
changes 
the  change  of  dielectric 
to com- 
in  linear  dimensions  due 
pensate  the  effect 
constant.  Com- 
bining (1) and  (2)  one  obtains 
constant.  It  turns  out  that 
to  thermal  expansion  tend 
of  a  changing  dielectric 
range  from  -75'C 
Over  the  temperature 
net  change  of  resonant  frequency 
with  proper  selection 
of  materials, 
eliminate  temperature  effects  on  the  resonant  frequency 
a  microstrip  patch  antenna. 
is  0.03  percent.  Thus, 
it  is  possible  to  almost 
of 
to  100'  a  typical 
of  PTFE-based 
 
CARVER 
t 
t 
2
.
-800 
4
0
- 4 0 0  
1 
i 
~
800 
I
~
120- 
'
~
'
"
0" 
1
TEMPERATURE  PC1 
~
40- 
Fig.  2.  Dependence of  dielectric  constant  on  temperature  for  poly- 
tetrafluoroethylene (PTFE) substrates. After Nowicki [23]. 
Fig.  3.  Composite  microstrip  square  patch  using 0.0065-in FTFE sub- 
strate  bonded  on  both  sides  of  0.25-in Hexcell  honeycomb  dielec- 
tric.  Substrate is cut away  to show both Hexcell and white  adhesive 
on bottom F'TFE  layer. 
Specialized  Substrate  Material 
While  the material  most  frequently  used  for  printed  anten- 
used  for spe- 
na  elements  is  PTFE,  there  are  other  materials 
cialized  applications.  Composite  materials  find  applications 
where  weight  is important,  such as for  spacecraft  antennas,  or 
where  large  physical  separation  between  the  antenna  element 
and  the  ground  plane 
is required.  One  such  substrate  consists 
of  two  thin  layers  of  PTFE  bonded 
(honeycomb)  material 
pending  upon 
electric  constant  ranges  from 
posite  substrate  thickness of  0.25 in. 
on  each  side  of  hexcell 
as  shown  in  Fig.  3  [251,  [261.  De- 
the  di- 
the  thickness  of  the  dielectric  layers, 
1 .I 7  to  about  1.40  for  a  com- 
A  second  approach 
to achieve  lightweight  antenna  struc- 
tures is  to  support  the  radiating  elements  on dielectric  spacers 
between  the  ground  plane  and  the  radiating  element.  If  these 
spacers  are  placed 
electric field  is small, the change  in  operating  parameters  from 
an  air  dielectric  antenna  will be small and  can  easily  be  com- 
puted using perturbation  theory  [ 271. 
the  antenna  where  the 
at  regions  within 
It is expected  that  PTFE  will continue  to be the  dominant 
substrate  material  for  printed  circuit  antennas.  The  dimen- 
sional  stability, 
ease  of  processing,  relatively  low  electrical 
5 
losses, good  copper  adhesion,  and availability of large sheets as 
class  of  materials  very 
well  as  preformed  shapes  make  this 
attractive.  A  primary  limiting  factor  for  this  material 
is  the 
relative  uncertainty  of  the  dielectric  constant  from  batch 
to 
batch.  As  systems  move  to higher  frequencies, other  substrate 
will  need  to be  developed.  One 
materials  with  lower  losses 
approach  may  be  to employ  syntactic  foams  with  a  combina- 
tion of bubbles  and  PTFE. 
111. ANALYSIS  TECHNIQUES FOR MICROSTRIP 
ELEMENTS 
Transmission-Line Models 
The  simplest  analytical  description  of  a  rectangular  micro- 
 
strip  patch  utilizes  transmission-line  theory  and  models  the 
l
patch  as  two  parallel  radiating  slots 
Each  radiating  edge  of  length 
radiating  into  a 
[27, p.  183 1 
a  is  modeled  as  a  narrow  slot 
half-space,  with  a 
[ 131  as  shown  in  Fig.  4. 
slot  admittance  given  by 
where  ho  is  the  free-space  wavelength,  zo  = a, ko  = 
t. Since the  slots  are  identical  (except  for 
2a/ho,  and  w is  the  slot  width,  approximately  equal  to  the 
substrate  thickness 
fringing  effects  associated  with 
an  identical  expression  holds  for  the  admittance 
Assuming no field  variation  along  the  direction parallel to  the 
radiating  edge, the characteristic  admittance is  given by 
the  feed  point  on 
edge  l), 
of  slot  2. 
where  t  is  the  substrate  thickness  and 
E,  is  the  relative  di- 
electric  constant.  Since  it  is  desired  to  excite  the  slots  180' 
out of  phase, the dimension  b  is set  equal to slightly less than 
&/2,  where  & = hot&, 
i.e.,  b  = 0.48hd  to  0.49hd.  This 
of 
slight  reduction  in  resonant  length 
the fringing  fields at  the radiating  edges. By  properly  choosing 
q ,  the  admittance of  slot  2  after 
this  length  reduction  factor 
transformation  becomes [ 901 
is  necessary  because 
z2 1- j i 2  = GI - j B 1 ,  
( 6) 
so that  the  total  input  admittance  at  resonance  becomes 
ri,  = (C,  + j B , )  + (Gz + j&)  = 2G1. 
typical  design,  a  = X0/2 so  that  G1 = 0.00417  mhos, 
(7) 
In  a 
i.e., 
R h  = (1/2G,)  = 120  a. 
The  resonant  frequency is found  from 
C 
f y = - = q - .  
M
r
C 
  2 b G r  
The  advantage  of  this  model 
i.e.,  the 
resonant  frequency  and 
given  by  the 
simple  formulas  (8) and  (9).  The  fringe  factor  q  determines 
in  practice  is 
the  accuracy 
of  the  resonant  frequency  and 
lies  in  its  simplicity, 
input  resistance  are 
6 
IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION, VOL. AP-29, NO. 1, JANUARY 1981 
I 
47’ 
I/ 
” 
RADIATING 
EDGES  -4 
7 
TOP 
VIEW 
i 
Fig. 5. 
(a)  Rectangular  microstrip  patch  with  inset  coaxial  feedpoint. 
(b) Patch with inset  microstrip transmission-line feed. 
(b) 
Zin 
g,+ji, 
AFTER 
TRANSFORMATION 
Fig.  4.  Transmission-line  model  of 
rectangular microstrip  antenna. 
After Munson  [ 131. 
determined  by  measuring  f, for  a  rectangular  patch  on  a 
given  substrate.  It 
holds  for  patches  of  other sizes  on  this  same  substrate  and 
in the same  general frequency range. 
is  then  assumed  that  the 
same  q  value 
&iodal-Expansion  Cavity Models 
open-circuit walls, 
of  rectangular  shape, 
Although  the  preceding  transmission-line  model 
is  easy 
to  use,  it  suffers  from  numerous  disadvantages.  It 
is  only 
useful  for  patches 
the  fringe  factor 
q  must  be  empirically  determined,  it  ignores  field  variations 
along  the  radiating  edge,  it  is  not  adaptable  to inclusion  of 
the  feed,  etc.  These disadvantages  are  eliminated in  the modal- 
expansion  analysis  technique  whereby  the  patch  is  viewed as 
a  thin  TM,-mode  cavity  with  magnetic 
walls  [ 161.  [ 191, 
[28] -[34].  The field  between  the  patch  and  the  ground  plane 
is  expanded  in  terms  of  a series of  cavity  resonant  modes  or 
eigenfunctions  along  with  its  eigenvalues  or  resonant 
fre- 
quencies  associated  with  each  mode.  The effect  of  radiation 
and  other losses is represented  in terms of either  an  artifically 
[ 161 or by  the  more  elegant 
increased  substrate  loss  tangent 
method  of  an  impedance  boundary  condition  at  the 
walls 
[28], [ 291.  This  results  in  a  much  more  accurate  formulation 
for  the  input 
etc,  for  both 
rectangular  and  circular  patches  at  only  a  modest  increase  in 
mathematical  complexity. 
impedance,  resonant  frequency, 
Rectangular Patch 
Consider  a  rectangular  patch  of  width a  and  length  b over 
a  ground  plane  with  a  substrate  of  thickness  f  and  a  dielectric 
constant  E,,  as  shown  in  Fig.  5.  So  long  as 
the  substrate 
is  electrically  thin,  the electric field  will be  z-directed  and  the 
interior  modes will be TM,, 
to z  so that 
m
n
 
are  the  mode  amplitude  coefficients  and 
where  A,, 
are the z-directed  orthonormalized  electric field mode  vectors. 
For  the elementary  case  of  a  nonradiating  cavity with  perfect 
e,, 
with 
1, 
m=O  and  n = O  
fi, 
2, 
m =
 or  n = ~  
~
m f O   and  n Z 0 .  
(12) 
The  mode  vectors  satisfy  the  homogeneous wave equation,  and 
the eigenvalues satisfy  the  separation  equation 
kmn2 = u m n 2 p f  = kn2 f k m 2 .  
(13) 
k ,   = (n.rr/a) and k ,   = (mn/b). 
For  the  nonradiating  cavity, 
The  magnetic  field  orthonormalized  mode  vectors  are  found 
from Maxwell’s equations as 
h,,  =-  - 1 
Xmn 
j u p  &iE 
* 
COS knx sin kmy - ykn sin knx COS k m y } .  
(14) 
For  this  nonradiating  case it is seen that  the  boundary  condi- 
tion n X  hmn = 0 is satisfied on each  perimeter wall. 
As  the  cavity  is  now  allowed  to  radiate,  the 
eigenvalues 
become  complex,  corresponding  to  complex  resonant 
fre- 
quencies,  so  that  I k,  I is  slightly  less  than  RK/a  and  lk,  I  is 
slightly  less  than  mx/b.  The  magnetic 
field  mode  vectors 
CARVER AND MINK:  MICROSTRIP  ANTENNA TECHNOLOGY 
hmn no  longer  have  a  zero  tangential  component 
cavity  sidewalls.  However 
that  the  electric 
given by (1 1). 
field  mode  vectors  are 
a  perturbational  solution  shows 
still  very  accurately 
Consider  now 
the  effect  of  a  z-directed  current  probe 
Zo 
of  small  rectangular  cross  section  (d,dy)  at (xo, y o )  as shown 
in  Fig.  5(a).  The  coefficients  of  each  electric  mode  vector  are 
found  from [ 271 : 
\\/.I em,, * dv, 
?zn 
A m n  = 
k2 - k m n 2  
 
which then 
reduces 
to 
A m ,   = il, fi 
k2 
2  Gmn COS kmY0 coskrt~o 
on  the  Therefore  the  input  impedance 
2,  = 5 = -jZokr 
x  9 m n 2 ( X o ,  Y O )  
is 
m
m
 
G m n .  
10 
m=o n=o  k2 - kmn 
7 
( 2 2 )  
5 )  
.~ 
The  (0,  0)  term  with 
koo  = 0  is  the  static  capacitance 
0)  term  represents  the  dominant 
. 
term  with  a  shunt  resistance  to  represent  loss  in  the  sub- 
strate.  The  (1, 
RF  mode 
transmission-line  mode  discussed  in 
and  is  identical  to  the 
is 
the  previous  section;  for  this  mode, 
cos  (nylb) variation 
no field  variation 
 and 
in  the y  direction.  This  mode is equivalent to a parallel R-L-C 
network 
 where 
losses.  If  the  patch is  square  or  nearly  so, the (0,  1)  mode  can 
also  be  excited 
modes  have  negligible  losses  and  sum 
L .  
All  the higher  order 
to  form  a  net  inductance 
as  a  degenerate  mode. 
(1 1 )   shows  that  there 
the x  direction 
R  represents 
 
 
copper 
radiation, 
and 
 
 
substrate, 
 a 
in 
 
Fig.  6(a)  shows 
a  general  network  representation  of  the 
(l6)  input 
impedance,  and 
Fig.  6(b)  shows  a  network  model 
over  a  narrow  band  about  an  isolated 
TMlo  mode,  where 
the  net  series  inductance  is  LT. The  feed  probe  diameter 
as 
expressed  by  the  factor  G,, 
is  the major  factor  in  determin- 
ing L T ,  since it governs the convergence  of the series. Equation 
( 2 2 )  can  be  written as 
where 
Gmn = 
sin (nndX/2a)  sin (mndy/2b) 
m?rdy/2b 
nndX/2a 
 
(17) 
In  (18) ij,,  is the  complex  resonant  frequency  of  the  mnth 
mode as found  from (13).  The  relation (1 5 )  for  the coefficients 
is  based  on  the  orthogonality  of  the  mode vectors;  although 
the  introduction  of  the  radiation  condition  means 
that these 
mode  vectors  are  no longer  orthogonal  in  the  strict  sense, for 
electrically  thin  substrates  the  error  due  to  this  assumption 
is  negligible.  The  factor  G,, 
feed;  for  coaxial  feeds 
is  set  equal 
d,d, 
probe.  For  patches 
yo = 0,  set d ,   = 0 and use d ,   as the feed  line  width  as  a  zero- 
order  approximation  ignoring  junction  capacitance  effects. 
to  the  effective  cross-section  area 
fed  by  a  microstrip  transmission  line  at 
d,  = d ,   and  the  cross-section  area 
accounts  for  the  width 
of  the 
of  the 
Substituting  (16)  into  (10) we obtain 
with  Cdc being the  dc  patch  capacitance ( ~ ~ b l t ) ,  Q the  quality 
factor  for  the  TMlo  mode,  and  w10 the radian  frequency  at 
both w10 and Q 
resonance.  A  simple  means  for  determining 
will  be  given  in  a  subsequent  paragraph.  The 
series inductive 
reactance is given by 
m n f O O  
Xmn 
9 m n  =- 
fi cos k,x  cos kmy 
The voltage at  the feed is now  computed as 
v,  =-fEz(Xo,Yo) 
which  shows  that  the 
substrate  thickness. 
series  reactance  is  proportional  to  the 
The  next  problem  is to find the complex  eigenvalues  kmn. 
also the 
Except  near  the  TMlo  mode  resonant  frequency  (or 
TMol  resonant  frequency  for  nearly  square  patches), kmn2 
(mn/b)'  -I-  (n ?r/a)'.  The  complex  eigenvalue 
kl  may  be 
found  by  either  lumping  all  the losses  into  an  effective 
electric  loss  tangent  [ 3 2 ]  , or  by  incorporating  the 
into  the  conductance 
of  impedance-type  boundary  conditions 
to  a  complex  transcendental  eigenvalue  equation 
di- 
losses 
of  the  radiating  walls  and  imposition 
[28], which  leads 
[ 2 9 ]  which 
8 
IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION, VOL. AP-29, NO.  1, JANUARY  1.981 
1 
where 
(Wo/b). 
 
(33) 
clo = (1 /2)cdc COS-2 
In addition to radiation losses, the cavity  also  sustains losses 
through  the  external  surface  wave  (caused  by  the presence of 
the  substrate) as well  as heat losses  associated  with the  copper 
(and  adhesive fiim used to bond to  the  substrate)  and  the  sub- 
strate  itself;  for  thin  substrates,  these 
resonance  in  comparison  to  the 
shown that  the loss conductance  referred  to  the  input voltage 
is given by 
radiation  loss.  It  may  be 
losses  are  small 
at 
where  Rs = d
The  substrate loss conductance is given by 
a
 
is the wave  resistance of  the  conductor. 
Gdi = WC10 tan 6  (IT) 
(35) 
where  tan  6  is  the  substrate  loss  tangent  (typically  0.001  or 
less). The  total Q for  thin  substrates is therefore given by 
W W  
Q =-  = 
'lo w  -' 
Gin 
TMo  QRo0 
I 
I 
(a) 
Fig.  6. 
(a)  General  network  model  representing  microstrip  antenna. 
0) Network  model  over  narrowband  about 
After Richards et al.  [ 321. 
isolated T M ~ o  mode. 
holds  for  thin  substrates: 
tan klob = 
2kl O Q 1 0  
k1o2 - a102 
where 
Pin 
with  Y ,   being the  admittance  of  the radiating walls  at y  = 0 
and  y  = b.  A  simple  iterative  algorithm  has  been  developed 
[29]  for  Tiding  the complex  eigenvalue, i.e., 
where 
with  A0  = 0  as  a  seed  value. 
Equation  (30)  is  derived  from 
(27)  with  tan 
k l o b   expanded  in  the  Test  two  terms  of  a 
Taylor  series  about  T .  By  using (27),  klo is  found  as  a  com- 
plex  pole  whose  real part is typically  from  96  to  98  percent of 
(rib), and  whose  imaginary  part  is positive  and  proportional 
This is  equivalent  to 
to  the 
fringing  factor  q.  The  radiation 
rigorously  solving 
quality  factor is then  found  for  thin  substrates  by  [291 
power  lost  through  radiation. 
for  the 
from  which  the  radiation  resistance  at  resonance  (referred 
the  input) is found by 
to 
where Gin is the  input  conductance given by 
In  a  practical  design  for an edge-fed patch,  the  input resistance 
ranges  from  100-200  R; this value  can be  reduced  by  insetting 
the feed  point  for  either  coaxial inputs [ 191 or microstripline 
inputs  [351  by  noting  through  (32)  and  (33)  that  the 
radia- 
tion  resistance  varies  as  cos2(Tyo/b).  The  antenna  efficiency is  ' 
given by 
77=: 
Grad 
Gin 
and  ranges  typically  from  95  to  99 percent,  i.e.,  from  0.2 to 
0.05  dB. 
Wall Admittance  of  Rectangular Patch 
Radiated  and  reactively  stored  power  in 
the  region  ex- 
cavity  is  represented  as  the  wall  admit- 
in  (28).  No  rigorous  solutions  for  the 
terior  to  the  patch 
tance  Y,v,  as  used 
wall  admittance  of  a  microstrip  patch  as  yet  have  been  found, 
although  several  approximate  solutions  have  been  suggested, 
including  the  admittance  of  a  slot  in  a  ground  plane 
a  parallel-plate 
[ 191,  the 
line  [37],  [981,  [99], 
rectangular  microstrip  patch 
[38]. None  of  these  analogous 
geometries is  completely  satisfactory,  and  a  solution  with  full 
on  the 
generality  awaits 
Wiener-Hopf  method  [39],  [40]. In the absence  of  a  rigorous 
solution,  a 
reasonable  approach  is  to  assume  that  the  wall 
fringe  admittance  of  a  microstrip  transmission 
and  a  Green's  function  for  a  long 
current  work  in  progress  based 
TEM  waveguide  radiating 
[ 361, 
half-space 
into  a 
CARVER AND MINK:  MICROSTRIP ANTENNA TECHNOLOGY 
9 
angle  of  incidence,  which 
on  the  exterior  grounded  substrate. 
that  the  wall  admittance is 
which  can  propagate 
Importantly,  this  analysis  shows 
a  function  of  both  frequency  and 
then  shows  that  Y ,   cannot  be  rigorously  represented  by 
the 
(39)  or  (40) which  assume  normal 
approximate  expressions 
Y ,   will  depend 
incidence.  We  may  therefore  anticipate  that 
on  both  dimensions  a  and  b. Carver  [ 291, by  near-field  prob- 
ing of  the fields  near the wall,  has  shown  empirically  that  the 
wall  admittance  expressions 
modified  by  multiplying  Y ,   by  an  aspect  ratio  factor F,,(a/b) 
given by 
F ~ ( Q / ~ )  = 0.7747 + 0.5977 (a/b - I )  - 0.1638 (a/b - 112, 
(44) 
and  (43)  may  be 
(39),  (40), 
to  better  agreement  of  the  predicted  resonant 
and  S-band  than  by  assuming that 
fre- 
to  its  validity  is  unknown; clearly  more  work 
which  leads 
resistance  and  resonant  frequency  versus  aspect  ratio  with 
measured  results  at  L-band 
F,,  =  1.  Nonetheless,  (44)  is  empirical,  and 
quency  limit 
in  the  numerical  evaluation  of  the  Wiener-Hopf  solution  is. 
needed,  perhaps  reducing  this  to 
as given in (44). 
Radiation Pattern of Rectangular Patch 
curve-fit  polynomials  such 
the  upper 
The  far-field  radiation  pattern  of  a  rectangular  microstrip 
is  broad  in  both  the 
in  the  TMlo  mode 
E 
ground 
by  modeling  the  radiator  as  either 
of  length  a,  sep- 
patch  operating 
and  H  planes.  The  pattern  of  a  patch  over  a  large 
plane  may  be  calculated 
two  parallel  uniform  magnetic  line  sources 
arated  by  distance 
current  sources  as  suggested  in Fig. 7. The  effect of the  ground 
an 
plane  and  substrate 
electrical  distance  k t .  If  the  slot voltage  across either  radiating 
edge is taken as  VO, the calculated  fields  are 
b  [96],  or  as  two  equivalent  electric 
is  handled  by  imaging 
the  slot  at 
J 
ko - sin 0 sin q5 
a 
2 
conductance  is  that  of  a  wave  normally  incident  on a pard- 
lel-plate  TEM waveguide slot  radiating  into a  half-space  [271; 
for  electrically  small  slot  widths, 
length  is  given  by  n/(376ho) mho/m.  If  it is  further assumed 
is excited,  then  the wave 
that  only  the  dominant  TMlo  mode 
the  field 
is  normally  incident  on  the  radiating  edges  with 
intensity  being  uniform  across  both 
this 
case the  total wall conductance is  given by 
the  conductance  per  unit 
of  these  edges.  In 
G,  = (n/376)(a/b) 
(7Jr). 
(39) 
The  wall  susceptance  may  be  approximated  from  Hammer- 
stad’s  formula  for 
circuit [ 371  and assumes the  form 
the  capacitance  of  an  open  microstrip 
B ,   = 0.01668 (AZ/t)(a/x,)e, 
where 
(u), 
(40) 
a - + 0.262 
t 
- + 0.813 
a 
t 
1 +l&]-”’ 
and E,  is an  effective  dielectric  constant given by  [41] 
ee=-+- e,+  1 
 
2 
2 
E,---  1 
so  that  the  TMlo 
edges is 
lumped  wall  admittance  of  the  radiating 
Y ,  = G, i- jB,. 
(43) 
It  should  be  noted  that  the  susceptance  given by (40) is based 
on  Hammerstad’s  nondispersive 
and  disagrees  with  the susceptance given in (4) which is based 
is  rigorously 
on  a  dynamic  capacitance.  Neither  formula 
correct  for  the  microstrip  antenna,  and  better  relations  await 
theoretical work  in  progress. 
static  capacitance  relation 
It  will  be  shown  in  a  subsequent  section  that  (39) and (40) 
lead  to a  prediction  of  resonant  input  resistance  and  resonant 
frequency  which  is  in  good  agreement  with  measured  results 
for  the  aspect  ratios  1 < a/b < 2; for larger  aspect  ratios,  the 
assumption of  a uniform  field and  normal  incidence  on the ra- 
diating  edges is no longer  very  good, so that (39) and (40) are  in- 
sufficiently  accurate.  The advantage to this  impedance  bound- 
ary  condition  method 
field 
through  Y ,   is  that  it  explicitly  provides  (through 
the eigen- 
value  equation  (27))  for  improved  solutions 
problem,  when  these  are  published  in  future  literature. 
of  representing  the  exterior 
to  the  exterior 
It  should  be  mentioned  that  the  mode  vectors  of (1 1) may 
be  viewed  as  spatial  harmonics  resulting  from 
the  resonance 
of  quasi-TEM  plane  waves launched  from  the feed  which,  by 
zig-zagging off the cavity parameter wall,  travel  a  total  distance 
the walls so as to produce  con- 
and  experience  phase  shifts  at 
structive  interference.  An  analysis of  this  resonance  condition 
as  a  function  of  the  patch  aspect  ratio  a/b has  been  provided 
by  Chang and  Kuester [ 421 , who  have shown  that  an  optimum 
in the sense of  low-Q  opera- 
range  for  the  aspect  ratio  exists 
tion.  The  Wiener-Hopf  technique was used  to  obtain  the  wall 
reflection  coefficient 
in p M -  
strate  thickness,  and  dielectric  constant) 
ciple  then  be  used 
re- 
flection  coefficient  involves  two  infinite  integrals,  the  evalua- 
tion  of  which  reveals  both  LSE and  LSM  surface-wave  modes 
(as  a  function  of  incidence  angle,  sub- 
to  obtain  the  wall  admittance.  The 
which  may