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特性
应用范围
说明
TYPICAL APPLICATION
BLOCK DIAGRAM
TYPICAL APPLICATION SCHEMATIC
CONNECTION DIAGRAM
ABSOLUTE MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
ELECTRICAL CHARACTERISTICS
TIMING DIAGRAMS
THEORY OF OPERATION
Inductive Sensing
Measuring Parallel Resonance Impedance and Inductance with LDC1000
Calculation of Rp Min and Rp Max
Rp_MAX
Rp_MIN
Measuring Inductance
Output Data Rate
Choosing Filter Capacitor (CFA and CFB Pins)
PROGRAMMABLE REGISTERS
Register Description
DIGITAL INTERFACE
SPI Description
Extended SPI Transactions
INTB Pin Modes
Comparator Mode
Wake-Up Mode
DRDYB Mode
TYPICAL APPLICATIONS
Page 1
www.ti.com.cn LDC1000 电电感感数数字字转转换换器器 查查询询样样品品: LDC1000 LDC1000 ZHCSBM0 –SEPTEMBER 2013 说说明明 电感感测是一种遥控的、短程感测技术,此项技术能够 在灰尘、污垢、油和潮湿环境中实现导体目标的低成 本、高分辨率感测,这使得它在恶劣环境中非常可靠。 通过使用可在印刷电路板 (PCB) 上被创建为一个感测 元件的线圈,LDC1000 可实现超低成本系统解决方 案。 电感感测技术可实现线性/角位置、位移、运动、压 缩、振动、金属成分以及市面上包括汽车、消费类、计 算机、工业用、医疗用和通信应用在内的很多其它应用 的高精度测量。 电感感测以低于其它竞争对手解决方 案的成本提供更佳的性能和可靠性。 LDC1000 是世界上第一个电感数字转换器,从而在一 个低功耗、小封装尺寸解决方案内提供电感感测的优 势。 此产品采用一个小外形尺寸无引线 (SON)-16 封 装,并且提供了几种运行模式。 一个串行外设接口 (SPI) 简化了到微控制器 (MCU) 的连接。 1特特性性 • 无无磁磁体体操操作作 • 亚亚微微米米高高精精度度 • 可可调调感感测测范范围围((通通过过线线圈圈设设计计实实现现)) • 更更低低的的系系统统成成本本 • 远远程程传传感感器器放放置置((从从恶恶劣劣环环境境中中将将 LDC 去去耦耦合合)) • 高高耐耐久久性性((借借助助于于遥遥控控操操作作)) • 对对于于环环境境干干扰扰的的不不敏敏感感性性((诸诸如如污污垢垢、、灰灰尘尘、、水水、、 油油)) • 电电源源电电压压,,模模拟拟::4.75V 至至 5.25V • 电电源源电电压压,,IO::1.8V 至至 5.25V • 电电源源电电流流((无无 LC 谐谐振振回回路路))::1.7mA • Rp 分分辨辨率率::16 位位 • L 分分辨辨率率::24 位位 • LC 频频率率范范围围::5kHz 至至 5MHz 应应用用范范围围 • 电电传传线线控控系系统统 • 轮轮齿齿计计数数 • 流流量量计计 • 按按钮钮开开关关 • 笔笔记记本本电电脑脑 • 游游戏戏控控制制器器 • 多多功功能能打打印印机机 • 数数码码照照相相机机 • 医医疗疗设设备备 TYPICAL APPLICATION Figure 1. Axial Distance Sensing 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2013, Texas Instruments Incorporated English Data Sheet: SNOSCX2
LDC1000 ZHCSBM0 –SEPTEMBER 2013 www.ti.com.cn This integrated circuit can be damaged by ESD. Texas Instruments recommends that all appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. integrated circuits be handled with BLOCK DIAGRAM Figure 2. LDC1000 Block Diagram TYPICAL APPLICATION SCHEMATIC Figure 3. Typical Application Schematic 2 Copyright © 2013, Texas Instruments Incorporated MCULDOLDC10005V5VDGNDDGNDAGNDSensorVIODGNDVIOVDDVIOCLDOSDISDOSCLKCSBINTBTBCLKDGNDMOSIMISOSCLKGPIOINT/GPIOTimer/Aux CLKDAPGNDCFBCFAINBINA4-WireSerialInterfaceINAINBSCLKSDISDOCSINTBVDDCFACFBPowerGNDVIODGNDCLDORsLCFrequency CounterTBCLK/XINXOUTThresholdDetectorFrequency Counter Data RegisterProximity DataRegisterLDC
www.ti.com.cn CONNECTION DIAGRAM LDC1000 ZHCSBM0 –SEPTEMBER 2013 Figure 4. LDC1000 Pin Diagram SON-16 Table 1. Pin Description(1) FUNCTION SPI clock input. SCLK is used to clock-out/clock-in the data from/into the chip SPI CSB. Multiple devices can be connected on the same SPI bus and CSB can be used to select the device to be communicated with SPI Slave Data In (Master Out Slave In). This should be connected to the Master Out Slave In of the master SPI Slave Data Out (Master In Slave Out).It is high-z when CSB is high Digital IO Supply Digital ground LDC filter capacitor LDC filter capacitor External LC Tank. Connected to external LC tank External LC Tank. Connected to external LC tank Analog ground Analog supply LDO bypass capacitor. A 56nF capacitor should be connected from this pin to GND External time-base clock/XTAL. Either an external clock or crystal can be connected XTAL. Crystal out. Recommended to connect 8Mhz crystal between XIN and XOUT with 20pF cap from each pin to ground. Should be floating when external clock is used Configurable interrupt. This pin can be configured to behave in 3 different ways by programing the INT pin mode register. Either threshold detect, wakeup, or DRDYB Connect to GND PIN NAME SCLK CSB SDI VIO SDO DGND CFB CFA INA INB GND VDD CLDO TBCLK/XIN XOUT INTB DAP PIN NO. 1 2 PIN TYPE DO DI 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 DI P DO P A A A A P P A DI/A A DO P (1) DO: Digital Output, DI: Digital Input, P: Power, A: Analog Copyright © 2013, Texas Instruments Incorporated 3 116765432101112131415DAP(GND)SCLKSDODGNDCFBVDDCLDOXOUTINBGNDTBCLK/XININTB89CSBSDIVIOCFAINA
LDC1000 ZHCSBM0 –SEPTEMBER 2013 ABSOLUTE MAXIMUM RATINGS(1) ESD Tolerance(2) Human Body Model Charge Device Model www.ti.com.cn 1kV 250V 6V 6V Analog Supply Voltage (VDD – GND) IO Supply Voltage (VIO – GND) Voltage on any Analog Pin Voltage on any Digital Pin Input Current on INA and INB Junction Temperature, TJ(3) Storage Temperature Range , Tstg (1) Absolute Maximum Ratings are limits beyond which damage to the device may occur. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. Operating Ratings are conditions under which operation of the device is intended to be functional. For ensured specifications and test conditions, see the Electrical Characteristics. -0.3V to VDD + 0.3V -0.3V to VIO + 0.3V 8mA +150°C -65°C to +150°C (2) The human body model is a 100pF capacitor discharged through a 1.5kΩ resistor into each pin. (3) The maximum power dissipation is a function of TJ(MAX), θJA, and the ambient temperature, TA. The maximum allowable power dissipation at any ambient temperature is PDMAX = (TJ(MAX) - TA)/ θJA. All numbers apply for packages soldered directly onto a PC board. The package thermal impedance is calculated in accordance with JESD 51-7. RECOMMENDED OPERATING CONDITIONS(1) Analog Supply Voltage (VDD – GND) IO Supply Voltage (VIO – GND) VDD-VIO Operating Temperature, TA Package Thermal Resistance(2) SON (θJA) MIN 4.75 1.8 >=0 -40 MAX 5.25 5.25 125 28 UNIT V V V °C °C/W (1) Absolute Maximum Ratings are limits beyond which damage to the device may occur. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. Operating Ratings are conditions under which operation of the device is intended to be functional. For ensured specifications and test conditions, see the Electrical Characteristics. (2) The maximum power dissipation is a function of TJ(MAX), θJA, and the ambient temperature, TA. The maximum allowable power dissipation at any ambient temperature is PDMAX = (TJ(MAX) - TA)/ θJA. All numbers apply for packages soldered directly onto a PC board. The package thermal impedance is calculated in accordance with JESD 51-7. 4 Copyright © 2013, Texas Instruments Incorporated
www.ti.com.cn ELECTRICAL CHARACTERISTICS(1) Unless otherwise specified, all limits ensured for TA = TJ = 25°C, VDD = 5.0V, VIO = 3.3V(2) SYMBOL MIN(3) TYP(4) PARAMETER CONDITIONS/ COMMENTS POWER VDD VIO IDD IVIO IDD_LP tSTART LDC fsensor_MIN fsensor_MAX Asensor_MIN Asensor_MAX tREC Rp_MIN Rp_MAX Rp_RES tS_MIN tS_MAX Analog Supply Voltage IO Supply Voltage Supply Current, VDD IO Supply Current Low-Power Mode Supply Current Start-Up Time Minimum sensor frequency Maximum sensor frequency Minimum sensor amplitude Maximum sensor amplitude Recovery time Minimum Sensor Rp Range Maximum Sensor Rp Range Rp Measurement Resolution Minimum Response Time Maximum Response Time 4.75 1.8 VIO≤VDD Does not include LC tank current Static current With out LC Tank From POR to ready-to- convert. Crystal not used for frequency counter Oscillation start-up time after RP under-range condition Minimum programmable settling time of digital filter Maximum programmable settling time of digital filter EXTERNAL CLOCK/CRYSTAL FOR FREQUENCY COUNTER Crystal External Clock Frequency Startup time Frequency Clock Input High Voltage 5 3.3 1.7 250 2 5 5 1 4 10 798 3.93M 16 192×1/fsensor 6144×1/fsensor 8 30 LDC1000 ZHCSBM0 –SEPTEMBER 2013 MAX(3) UNITS 5.25 5.25 2.3 14 8 VIO V V mA uA uA ms kHz MHz VPP VPP 1/fsensor Ω Ω Bits s s MHz ms MHz V (1) Electrical Characteristics Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No specification of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA. Absolute Maximum Ratings indicate junction temperature limits beyond which the device may be permanently degraded, either mechanically or electrically. (2) The maximum power dissipation is a function of TJ(MAX), θJA, and the ambient temperature, TA. The maximum allowable power dissipation at any ambient temperature is PDMAX = (TJ(MAX) - TA)/ θJA. All numbers apply for packages soldered directly onto a PC board. The package thermal impedance is calculated in accordance with JESD 51-7. (3) Limits are specified by testing, design, or statistical analysis at 25°C. Limits over the operating temperature range are specified through correlations using statistical quality control (SQC) method. (4) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will also depend on the application and configuration. The typical values are not tested and are not specified on shipped production material. Copyright © 2013, Texas Instruments Incorporated 5
LDC1000 ZHCSBM0 –SEPTEMBER 2013 ELECTRICAL CHARACTERISTICS(1) (continued) Unless otherwise specified, all limits ensured for TA = TJ = 25°C, VDD = 5.0V, VIO = 3.3V(2) SYMBOL PARAMETER CONDITIONS/ COMMENTS MIN(3) TYP(4) DIGITAL I/O CHARACTERISTICS VIH VIL VOH Logic "1" Input Voltage Logic "0" Input Voltage Logic "1" Output Voltage VOL IIOHL Logic "0" Output Voltage Digital IO Leakage Current ISOURCE=400uA ISINK=400uA 0.8×VIO -500 VIO-0.3 www.ti.com.cn MAX(3) UNITS 0.2×VIO 0.3 500 V V V V nA 6 Copyright © 2013, Texas Instruments Incorporated
www.ti.com.cn TIMING DIAGRAMS LDC1000 ZHCSBM0 –SEPTEMBER 2013 Unless otherwise noted, all limits specified at TA = 25°C, VDD=5.0, VIO=3.3, 10pF capacitive load in parallel with a 10kΩ load on SDO. Specified by design; not production tested. Figure 5. Write Timing Diagram Table 2. PARAMETER CONDITIONS MIN TYP FSCLK tPH tPL tSU tH Serial Clock Frequency SCLK Pulse Width High SCLK Pulse Width Low SDI Setup Time SDI Hold Time FSCLK=4Mhz FSCLK=4Mhz 0.4/Fsclk 0.4/Fsclk 10 10 MAX 4 Figure 6. Read Timing Diagram PARAMETER CONDITIONS MIN TYP tODZ tOZD tOD tCSS tCSH tIAG tDRDYB SDO Driven-to-Tristate Time SDO Tristate-to-Driven Time SDO Output Delay Time CSB Setup Time CSB Hold Time Inter-Access Gap Data ready pulse width Measured at 10% / 90% point Measured at 10% / 90% point 20 20 100 Data ready pulse at every 1/ODR if no data is read 1/fsensor MAX 20 20 20 UNIT MHz s s ns ns UNIT ns ns ns ns ns ns s Copyright © 2013, Texas Instruments Incorporated 7 SCLKSDIttCSHtttCSSt16th ClockSCLKxxxxxxttCSHtttCSStD7D1D01st Clock8th ClockttHttODtOZDSCLKSDIttPLtValid DataValid DatattPHtttSUtttHt16th Clock
LDC1000 ZHCSBM0 –SEPTEMBER 2013 THEORY OF OPERATION www.ti.com.cn Inductive Sensing An AC current flowing through a coil will generate an AC magnetic field. If a conductive material, such as a metal target, is brought into the vicinity of the coil, this magnetic field will induce circulating currents (eddy currents) on the surface of the target. These eddy currents are a function of the distance, size, and composition of the target. These eddy currents then generate their own magnetic field, which opposes the original field generated by the coil. This mechanism is best compared to a transformer, where the coil is the primary core and the eddy current is the secondary core. The inductive coupling between both cores depends on distance and shape. Hence the resistance and inductance of the secondary core (Eddy current), shows up as a distant dependent resistive and inductive component on the primary side (coil). The figures below show a simplified circuit model. Figure 7. Inductor with a Metal Target Eddy currents generated on the surface of the target can be modeled as a transformer as shown in Figure 8. The coupling between the primary and secondary coils is a function of the distance and conductor’s characteristics. In Figure 8, the inductance Ls is the coil’s inductance, and Rs is the coil’s parasitic series resistance. The inductance L(d), which is a function of distance d, is the coupled inductance of the metal target. Likewise, R(d) is the parasitic resistance of the eddy currents. Figure 8. Metal Target Modeled as L and R with Circulating Eddy Currents 8 Copyright © 2013, Texas Instruments Incorporated Target Metal SurfaceConductance of MetalLs + L(d)Rs + R(d)Distance dEddy CurrentsMetal Targetd
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