小米小爱音箱声音放大芯片AD51652详细资料.pdf-资料库

ESMT Preliminary AD51652 3W Mono Filter-less Class-D Audio Amplifier Features Supply voltage range: 2.5 V to 5.5 V Support single-ended or differential analog input Low Quiescent Current Low Output Noise Low shut-down current Short power-on transient time Short-circuit protection Over-temperature protection Loudspeaker power within 10% THD+N Internal pull-low resistor on shut-down pins 1.78W/ch into 8W >3W/ch into 4W loudspeaker loudspeaker Loudspeaker efficiency 93% @ 8W 85% @ 4W , THD+N=10% , THD+N=10% MSOP-8L, TDFN-8L and 0.4mm ball pitch WLCSP-9L packages Integrated Feedback Resistor of 300kW Functional Block Diagram Applications Monitor audio PDA Portable multimedia devices Notebook computer Mobile phone Description The AD51652 is a 3.0W mono, filter-less class-D audio amplifier. Operating with 5.0V loudspeaker driver supply, it can deliver 3.0W output power into 4 W loudspeaker within 10% THD+N or 2.6W at 1% THD+N. The AD51652 is a mono audio amplifier with high efficiency and suitable for the notebook computer, and portable multimedia device. Gain=300k /Rin VDD Cin + Rin INP Differential input Cin Rin - INN SD ~150k + - - + ~150k -wave Generator ~300k PWM Generator Loudspeaker Driver VOP VON Overload, Voltage & Thermal Protection GND Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2014 Revision: 0.03 1/18

ESMT Preliminary AD51652 Typical Application Circuit CS2 0.1uF CS1 2.2uF AD51652 Filterless Class-D VDD VOP VON GND Cin Rin 1uF 150kΩ Cin Rin 1uF 150kΩ INP INN ON SD OFF Note. Gain=2 V/V Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2014 Revision: 0.03 2/18

ESMT Preliminary AD51652 Pin Assignments MSOP-8 Order information AD51652-MH08NRR TDFN-8 WLCSP-9 MH08 MSOP-8 Package NRR RoHS & Halogen free Rating: -40 to 85°C Package in Tape & Reel Order information AD51652-FH08NRR FH08 TDFN-8 Package NRR RoHS & Halogen free Rating: -40 to 85°C Package in Tape & Reel Order information AD51652-WL09NRR WL09 WLCSP-9 Package NRR RoHS & Halogen free Rating: -40 to 85°C Package in Tape & Reel Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2014 Revision: 0.03 3/18

ESMT Preliminary AD51652 Pin Description PIN MSOP-8 TDFN-8 WLCSP-9 1 3 2 4 5 6 7 8 9 C2 A1 N/A C1 C3 B2 A2, B3 A3 N/A IO TYPE I I NC I O P G O G DESCRIPTION Shutdown AD51652 (Low active logic) Positive differential input No internal connect Negative differential input Positive output Power supply Power ground Negative output Must be connected the package thermal pad to PCB thermal land. NAME SD INP NC INN VOP VDD GND VON 1 2 3 4 5 6 7 8 Thermal pad N/A Available Package Package Type MSOP-8 Device no. θJA (oC/W) Exposed Thermal Pad 190 45.8 128 No Yes No TDFN-8 (3x3mm) AD51652 WLCSP-9 Absolute Maximum Ratings SYMBOL PARAMETER VDD Supply for analog cells & loudspeaker driver Tstg TJ Input pins voltage Storage temperature Junction operating temperature Recommended Operating Conditions SYMBOL PARAMETER VDD VIH VIL TJ Ta Supply for analog cells & loudspeaker driver High-Level Input Voltage Low-Level Input Voltage Junction operating temperature Ambient Operating Temperature MIN -0.3 -0.3 -65 -40 MIN 2.5 1.3 - -40 -40 MAX UNIT 6.0 5.5 150 150 MAX 5.5 - 0.35 125 85 V V oC oC UNIT V V V ℃ ℃ Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2014 Revision: 0.03 4/18

ESMT Preliminary AD51652 General Electrical Characteristics (TA=25℃℃℃℃) SYMBOL PARAMETER CONDITION MIN TYP MAX UNIT VDD=SD=5V, Output switching VDD=5.5V; SD#=0 Input ac grounded, VDD=2.5V ~ 5.5V Iq Operating current IPD Supply current during power-down mode Voffset Output offset voltage Tsd Thys fsw AV Junction temperature for driver shutdown Temperature hysteresis for recovery from shutdown Switching rate of loudspeakers driver Gain Ton Turn-on time RSC Loudspeaker short-circuit detect resistance VDD = 3.6 V VDD = 5.0 V 3 <1 mA < 1 5 mV 165 20 oC oC 250 300 350 kHz kW 270 inR kW 300 inR 1.7 2.8 kW 330 inR 4 V/V msec 3.2 ohm Electrical Characteristics and Specifications for Loudspeaker Gain= 2 V/V, Load=8W SYMBOL , fin=1 kHz, CS1=2.2uF, CS2=0.1uF, TA=25℃ (unless otherwise noted) PARAMETER CONDITION MIN VDD=5.0V PO RMS Output Power VDD=3.6V VDD=2.5V THD+N = 10 % THD+N = 1 % THD+N = 10 % THD+N = 1 % THD+N = 10 % THD+N = 1 % THD+N Total Harmonic Distortion plus Noise SNR Signal to Noise Ratio PSRR Power Supply Rejection Ratio CMRR Common-Mode Rejection Vn h Output integrated noise (A-weighted) Efficiency (TDFN-8L) VDD=5.0V, Po=1.0W VDD=3.6V, Po=0.5W VDD=2.5V, Po=0.2W VDD=5.0V, Po=1.0W VDD=3.6V, Vripple=200mVpp Inputs ac grounded with Ci=2m F f=217 Hz VDD=3.6V, VIC=1Vpp, f=217Hz VDD=3.6V fin=20Hz ~ 20kHz VDD=5V, THD+N=10% TYP MAX UNIT 1.78 1.44 0.91 0.74 0.43 0.35 0.035 0.039 0.058 W W W W W W % % % dB 98 74 76 23 90 dB dB m V % Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2014 Revision: 0.03 5/18 m A

ESMT Preliminary AD51652 fin=1 kHz, CS1=2.2uF, CS2=0.1uF, TA=25℃ (unless otherwise noted) Gain= 2 V/V, Load=4W, SYMBOL PARAMETER TYP MAX UNIT 3.2 2.6 1.63 1.33 0.74 0.6 0.039 0.043 0.068 W W W W W W % % % dB 98 77 76 22 85 dB dB m V % CONDITION MIN VDD=5.0V PO RMS Output Power VDD=3.6V VDD=2.5V THD+N = 10 % THD+N = 1 % THD+N = 10 % THD+N = 1 % THD+N = 10 % THD+N = 1 % THD+N Total Harmonic Distortion plus Noise SNR Signal to Noise Ratio PSRR Power Supply Rejection Ratio CMRR Common-Mode Rejection Output integrated noise (A-weighted) Efficiency (TDFN-8L) Vn h VDD=5.0V, Po=2.0W VDD=3.6V, Po=1.0W VDD=2.5V, Po=0.5W VDD=5.0V, Po=1.8W VDD=3.6V, Vripple=200mVpp Inputs ac grounded with Ci=2m F f=217 Hz VDD=3.6V, VIC=1Vpp, f=217Hz VDD=3.6V fin=20Hz ~ 20kHz VDD=5.0V, THD+N=10% Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2014 Revision: 0.03 6/18

ESMT Preliminary AD51652 Typical Characteristics (Gain= 2 V/V, unless otherwise noted) Total Harmonic Distortion + Noise (THD+N) vs Output Power (8W ) ) % ( N + D H T 20 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 10m VDD=2.5V VDD=3.6V VDD=5V 20m 50m 100m 200m 500m 1 2 Po - Output Power (W) 5 Total Harmonic Distortion + Noise (THD+N) vs Output Power (4W ) VDD=2.5V VDD=3.6V VDD=5V RLOAD=4Ω f=1kHz 20 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 10m 20m 50m 100m 200m 500m 1 2 5 Po - Output Power (W) Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2014 Revision: 0.03 7/18

ESMT Preliminary AD51652 Total Harmonic Distortion + Noise (THD+N) vs Signal Frequency (5V/8W ) ) % ( N + D H T Total Harmonic Distortion + Noise (THD+N) vs Signal Frequency (3.6V/8W ) VDD=3.6V RLOAD=8Ω f=1kHz Po=25mW Po=125mW Po=500W 50 100 200 500 1k 2k 5k 10k 20k Frequency (Hz) ) % ( N + D H T 20 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0. 005 0. 002 0. 001 20 Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2014 Revision: 0.03 8/18

资料库

小米小爱音箱声音放大芯片AD51652详细资料.pdf

相关推荐

音视频

热门标签

最新资料