JEDEC 
STANDARD 
 
 
 
 
Cycled Temperature-Humidity-Bias 
Life Test 
 
 
 
JESD22-A100C 
(Revision of JESD22-A100-B, April 2000) 
 
 
 
 
 
OCTOBER 2007 
 
 
 
JEDEC SOLID STATE TECHNOLOGY ASSOCIATION 
 
 
 
 
 
 
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Scope 
Apparatus 
TEST METHOD A100-B 
 
CYCLED TEMPERATURE-HUMIDITY-BIAS LIFE TEST 
 
(From JEDEC Board Ballot JCB-99-80 and JCB-07-77, formulated under the cognizance of JC-14.1 
Committee on Reliability Test Methods for Packaged Devices.) 
 
 
1 
 
The Cycled Temperature-Humidity-Bias Life Test is typically performed on cavity packages (e.g. 
MQUADs, lidded ceramic pin grid arrays, etc.) as an alternative to JESD22-A101 or JESD22-A110. 
 
The Cycled Temperature-humidity –Biased Life Test is performed for the purpose of evaluating the 
reliability of non-hermetic, packaged solid state devices in humidity environments when surface 
condensation is likely. It employs conditions of bias, temperature cycling and high humidity that will 
cause condensation to occur on the device surface. It is useful to determine device surface susceptibility 
to corrosion and/or dendritic growth. 
 
For most applications test method JESD22-A110 “Highly Accelerated Temperature and Humidity Stress 
Test (HAST)” or JESD22-A101 “Steady State Temperature, Humidity, Biased Life Test” is preferred. 
 
 
2 
 
The test requires a temperature-humidity test chamber capable of maintaining a specified temperature and 
relative humidity profile continuously, while providing electrical connections to the devices under test in 
a specified biasing configuration. 
 
2.1 
 
The chamber must be capable of providing controlled conditions of temperature and relative humidity as 
described in clause 3, Test Conditions. 
 
2.2 
 
A recording device (e.g. a chart recorder or a computer) with an interface to suitable chamber monitoring 
instrumentation shall be provided for continuous recording of chamber temperature and relative humidity. 
 
2.3 
 
Devices under stress must be physically located to minimize temperature gradients. 
 
2.4  Minimize release of contamination 
 
Care must be exercised in the choice of board and socket materials, to minimize release of contamination, 
and to minimize degradation due to corrosion and other mechanisms. 
 
Temperature and relative humidity 
Devices under stress 
Recording device 
JEDEC Standard No. 22-A100C 
Page 1 
 
 
Test Method A100C 
(Revision of A100-B) 
Apparatus (cont’d) 
Ionic contamination 
JEDEC Standard No. 22-A100C 
Page 2 
 
 
2 
 
2.5 
 
Ionic contamination of the test apparatus (card cage, test boards, sockets, wiring, storage containers, etc.) 
shall be controlled to avoid test artifacts. 
 
2.6 
 
Deionized water with a minimum resistivity of 1 megohm-cm at room temperature shall be used. 
 
 
3 
 
The test condition consists of a temperature, relative humidity, and duration used in conjunction with an 
electrical bias configuration specific to the device. 
 
3.1 
 
The devices under test shall be subjected to the temperature and humidity conditions shown in Figure 1. 
Unless otherwise specified in an applicable procurement document or specification sheet, the test duration 
shall be 1008 (-24, +168) hours. 
Temperature and relative humidity 
Deionized water 
Test Conditions 
4 hours min.
8 hours max.
...
65
30
)
C
°
(
 
e
r
u
t
a
r
e
p
m
e
T
C
°
 
2
±
2 hours min.
4 hours max.
2 hours min.
4 hours max.
Time, hours
Figure 1 — Temperature Profile (90% to 98% Relative Humidity) 
 
 
Test Method A100C 
(Revision of A100-B) 
JEDEC Standard No. 22-A100C 
Page 3 
 
 
Biasing guidelines 
Test Conditions (cont’d) 
3 
 
3.2 
 
3.2.1  Apply bias according to the following guidelines: 
 
a)  Minimize power dissipation. 
 
b)  Alternate pin bias as much as possible. 
 
c)  Distribute potential differences across chip metallization as much as possible. 
 
d)  Maximize voltage within operating range. 
 
NOTE  The priority of the above guidelines depends on the mechanism and specific device characteristics. 
 
3.2.2  Either of two kinds of bias may be used to satisfy these guidelines, whichever is more 
severe: 
 
a)  Continuous bias – the dc bias shall be applied continuously. Continuous bias is more severe than 
cycled bias when the die temperature is less than or equal to 10 °C higher than the chamber ambient 
temperature, or if the die temperature is not known when the heat dissipation of the device under test 
(DUT) is less than 200 mW. If the heat dissipation of the DUT exceeds 200 mW, then the die 
temperature should be calculated. If the die temperature exceeds the chamber ambient temperature by 
more than 5 °C, then the die temperature rise above the chamber ambient should be included in 
reports of test results since the acceleration of failure mechanisms will be affected. 
 
b)  Cycled bias – the dc voltage applied to the devices under test shall be periodically interrupted with an 
appropriate frequency and duty cycle. If the biasing configuration results in a temperature rise above 
the chamber ambient , ΔTja, exceeding 10 °C, then cycled bias, when optimized for a specific device 
type, will be more severe than continuous bias. Heating as a result of power dissipation tends to drive 
moisture away from the die and thereby hinders moisture-related failure mechanisms. Cycled bias 
permits moisture collection on the die during the off periods when the device power dissipation does 
not occur. Cycling the DUT bias with one hour on and one hour off is optimal for most plastic 
encapsulated microcircuits. The die temperature, as calculated on the basis of the known thermal 
impedance and dissipation, should be quoted with the results whenever it exceeds the chamber 
ambient by 5 °C or more. 
 
Test Method A100C 
(Revision of A100-B) 
Test Conditions (cont’d) 
Biasing guidelines (cont’d) 
JEDEC Standard No. 22-A100C 
Page 4 
 
 
3 
 
3.2 
 
3.2.3  Choosing and reporting 
 
Choosing and reporting – criteria for choosing continuous or cyclical bias, and whether or not to report 
the amount by which the die temperature exceeds the chamber ambient temperature, are summarized in 
Table 1. 
 
Table 1 — Cyclical Bias and Reporting ΔTja 
ΔTja 
Cyclical Bias?  Report ΔTja? 
ΔTja < 5 °C, or 
Power per DUT < 200 mW 
(ΔTja ≥ 5 °C, or 
Power per DUT ≥ 200 mW) 
and ΔTja < 10 °C 
ΔTja ≥ 10 °C 
No 
No 
No 
Yes 
Yes 
Yes 
Procedures 
Ramp-up and ramp-down 
 
 
4 
 
The test devices shall be mounted in a manner that exposes them to the specified temperature and 
humidity with a specified electrical biasing condition. The test devices shall be placed in the test chamber 
with the sample and chamber at room ambient temperature and humidity. Care shall be taken to minimize 
the occurrence of condensation on devices and electrical fixtures. 
 
4.1 
 
During ramp-up and ramp-down, ensure that the test chamber (dry bulb) temperature exceeds the wet 
bulb temperature at all times. The rate of temperature change shall not exceed 10 °C/minute. At all 
interim and final endpoint measurements, the chamber humidity and temperature shall be reduced to room 
ambient conditions before removing the devices from the chamber. 
 
4.2 
 
During the transition periods from 65 °C to 30 °C and back up to 65 °C, the relative humidity may drop as 
low as 80%. The chamber shall be vented to avoid artificial pressurization. 
 
4.3 
 
The test clock starts at the beginning of the initial ramp-up and stops at the end of the final ramp-down. 
 
4.4 
 
Bias shall be verified after devices are loaded, prior to the start of the test clock. Bias shall also be verified 
after the test clock stops, but before the devices are removed from the chamber. 
Transition periods 
Test clock 
Bias 
Test Method A100C 
(Revision of A100-B)