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NAND Flash Memory
Features
Part Numbering Information
General Description
Asynchronous and Synchronous Signal Descriptions
Signal Assignments
Package Dimensions
Architecture
Device and Array Organization
Bus Operation – Asynchronous Interface
Asynchronous Enable/Standby
Asynchronous Bus Idle
Asynchronous Commands
Asynchronous Addresses
Asynchronous Data Input
Asynchronous Data Output
Write Protect
Ready/Busy#
Bus Operation – Synchronous Interface
Synchronous Enable/Standby
Synchronous Bus Idle/Driving
Synchronous Commands
Synchronous Addresses
Synchronous DDR Data Input
Synchronous DDR Data Output
Write Protect
Ready/Busy#
Device Initialization
Activating Interfaces
Activating the Asynchronous Interface
Activating the Synchronous Interface
Command Definitions
Reset Operations
RESET (FFh)
SYNCHRONOUS RESET (FCh)
RESET LUN (FAh)
Identification Operations
READ ID (90h)
READ ID Parameter Tables
READ PARAMETER PAGE (ECh)
Parameter Page Data Structure Tables
READ UNIQUE ID (EDh)
Configuration Operations
SET FEATURES (EFh)
GET FEATURES (EEh)
Status Operations
READ STATUS (70h)
READ STATUS ENHANCED (78h)
Column Address Operations
CHANGE READ COLUMN (05h-E0h)
CHANGE READ COLUMN ENHANCED (06h-E0h)
CHANGE WRITE COLUMN (85h)
CHANGE ROW ADDRESS (85h)
Read Operations
READ MODE (00h)
READ PAGE (00h-30h)
READ PAGE CACHE SEQUENTIAL (31h)
READ PAGE CACHE RANDOM (00h-31h)
READ PAGE CACHE LAST (3Fh)
READ PAGE MULTI-PLANE (00h-32h)
Program Operations
PROGRAM PAGE (80h-10h)
PROGRAM PAGE CACHE (80h-15h)
PROGRAM PAGE MULTI-PLANE (80h-11h)
Erase Operations
ERASE BLOCK (60h-D0h)
ERASE BLOCK MULTI-PLANE (60h-D1h)
Copyback Operations
COPYBACK READ (00h-35h)
COPYBACK PROGRAM (85h–10h)
COPYBACK READ MULTI-PLANE (00h-32h)
COPYBACK PROGRAM MULTI-PLANE (85h-11h)
One-Time Programmable (OTP) Operations
PROGRAM OTP PAGE (80h-10h)
PROTECT OTP AREA (80h-10h)
READ OTP PAGE (00h-30h)
Multi-Plane Operations
Multi-Plane Addressing
Interleaved Die (Multi-LUN) Operations
Error Management
Output Drive Impedance
AC Overshoot/Undershoot Specifications
Synchronous Input Slew Rate
Output Slew Rate
Electrical Specifications
Electrical Specifications – DC Characteristics and Operating Conditions (Asynchronous)
Electrical Specifications – DC Characteristics and Operating Conditions (Synchronous)
Electrical Specifications – DC Characteristics and Operating Conditions (VCCQ)
Electrical Specifications – AC Characteristics and Operating Conditions (Asynchronous)
Electrical Specifications – AC Characteristics and Operating Conditions (Synchronous)
Electrical Specifications – Array Characteristics
Asynchronous Interface Timing Diagrams
Synchronous Interface Timing Diagrams
Revision History
Rev. F Production – 5/12
Rev. E Production – 4/12
Rev. D Production – 6/11
Rev. C – 12/10
Rev. B – 7/10
Rev. A – 2/10
Micron Confidential and Proprietary 32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F32G08ABAAA, MT29F64G08AFAAA, MT29F128G08A[J/K/M]AAA MT29F256G08AUAAA, MT29F32G08ABCAB, MT29F64G08AECAB MT29F128G08A[K/M]CAB, MT29F256G08AUCAB • Operation status byte provides software method for detecting – Operation completion – Pass/fail condition – Write-protect status • Data strobe (DQS) signals provide a hardware meth- od for synchronizing data DQ in the synchronous interface • Copyback operations supported within the plane from which data is read • Quality and reliability – Data retention: JESD47G compliant; see qualifi- cation report – Endurance: 60,000 PROGRAM/ERASE cycles • Operating temperature: – Commercial: 0°C to +70°C – Industrial (IT): –40ºC to +85ºC • Package – 52-pad LGA – 48-pin TSOP – 100-ball BGA – 132-ball BGA Note: 1. The ONFI 2.2 specification is available at www.onfi.org. Features • Open NAND Flash Interface (ONFI) 2.2-compliant1 • Single-level cell (SLC) technology • Organization – Page size x8: 8640 bytes (8192 + 448 bytes) – Block size: 128 pages (1024K + 56K bytes) – Plane size: 2 planes x 2048 blocks per plane – Device size: 32Gb: 4096 blocks; 64Gb: 8192 blocks; 128Gb: 16,384 blocks; 256Gb: 32,786 blocks • Synchronous I/O performance – Up to synchronous timing mode 5 – Clock rate: 10ns (DDR) – Read/write throughput per pin: 200 MT/s • Asynchronous I/O performance – Up to asynchronous timing mode 5 – tRC/tWC: 20ns (MIN) – Read/write throughput per pin: 50 MT/s • Array performance – Read page: 35µs (MAX) – Program page: 350µs (TYP) – Erase block: 1.5ms (TYP) • Operating Voltage Range – VCC: 2.7–3.6V – VCCQ: 1.7–1.95V, 2.7–3.6V • Command set: ONFI NAND Flash Protocol • Advanced Command Set – Program cache – Read cache sequential – Read cache random – One-time programmable (OTP) mode – Multi-plane commands – Multi-LUN operations – Read unique ID – Copyback • First block (block address 00h) is valid when ship- ped from factory. For minimum required ECC, see Error Management (page 114). • RESET (FFh) required as first command after pow- er-on PDF: 09005aef83e0bed4 M73A_32Gb_64Gb_128Gb_256Gb_AsyncSync_NAND.pdf Rev. F 5/12 EN Products and specifications discussed herein are subject to change by Micron without notice. 1 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved.
Micron Confidential and Proprietary 32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND Features Part Numbering Information Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by using Micron’s part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Part Numbering MT 29F 32G 08 A B A A A WP Z ES :A Micron Technology NAND Flash 29F = NAND Flash memory Density 32G = 32Gb 64G = 64Gb 128G = 128Gb 256G = 256Gb Device Width 08 = 8 bits Level Bit/Cell A 1-bit Classification B E F J K M U 1 2 2 2 2 4 4 Die # of CE# # of R/B# I/O 1 2 2 4 4 4 8 1 Common 2 Separate 2 Common 2 Common Separate 2 Separate 4 4 Separate Operating Voltage Range A = VCC: 3.3V (2.7–3.6V), VCCQ: 3.3V (2.7–3.6V) C = VCC: 3.3V (2.7–3.6V), VCCQ: 1.8V (1.7–1.95V) Note: 1. Pb-free package. Design Revision A = First revision Production Status Blank = Production ES = Engineering sample Reserved for Future Use Blank Wafer Process Applied Blank = Polyimide Process Not Applied Z = Polyimide Process Applied Operating Temperature Range Blank = Commercial (0°C to +70°C) IT = Industrial (–40°C to +85°C) Speed Grade (synchronous mode only) -10 = 200 MT/s Package Code C5 = 52-pad VLGA 14mm x 18mm x 1.0mm1 H1 = 100-ball VBGA 12mm x 18mm x 1.0mm1 H2 = 100-ball TBGA 12mm x 18mm x 1.2mm1 H3 = 100-ball LBGA 12mm x 18mm x 1.4mm1 J1 = 132-ball VBGA 12mm x 18mm x 1.0mm1 J2 = 132-ball TBGA 12mm x 18mm x 1.2mm1 J3 = 132-ball LBGA 12mm x 18mm x 1.4mm1 WP = 48-pin TSOP1 (CPL) Interface A = Async only B = Sync/Async Generation Feature Set A = First set of device features PDF: 09005aef83e0bed4 M73A_32Gb_64Gb_128Gb_256Gb_AsyncSync_NAND.pdf Rev. F 5/12 EN 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved.
Micron Confidential and Proprietary 32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND Features Contents General Description ......................................................................................................................................... 9 Asynchronous and Synchronous Signal Descriptions ......................................................................................... 9 Signal Assignments ......................................................................................................................................... 11 Package Dimensions ....................................................................................................................................... 15 Architecture ................................................................................................................................................... 23 Device and Array Organization ........................................................................................................................ 24 Bus Operation – Asynchronous Interface ......................................................................................................... 32 Asynchronous Enable/Standby ................................................................................................................... 32 Asynchronous Bus Idle ............................................................................................................................... 32 Asynchronous Commands .......................................................................................................................... 33 Asynchronous Addresses ............................................................................................................................ 34 Asynchronous Data Input ........................................................................................................................... 35 Asynchronous Data Output ......................................................................................................................... 36 Write Protect .............................................................................................................................................. 37 Ready/Busy# .............................................................................................................................................. 37 Bus Operation – Synchronous Interface ........................................................................................................... 42 Synchronous Enable/Standby ..................................................................................................................... 43 Synchronous Bus Idle/Driving .................................................................................................................... 43 Synchronous Commands ............................................................................................................................ 44 Synchronous Addresses .............................................................................................................................. 45 Synchronous DDR Data Input ..................................................................................................................... 46 Synchronous DDR Data Output .................................................................................................................. 47 Write Protect .............................................................................................................................................. 49 Ready/Busy# .............................................................................................................................................. 49 Device Initialization ....................................................................................................................................... 50 Activating Interfaces ....................................................................................................................................... 52 Activating the Asynchronous Interface ........................................................................................................ 52 Activating the Synchronous Interface .......................................................................................................... 52 Command Definitions .................................................................................................................................... 54 Reset Operations ............................................................................................................................................ 56 RESET (FFh) ............................................................................................................................................... 56 SYNCHRONOUS RESET (FCh) .................................................................................................................... 57 RESET LUN (FAh) ....................................................................................................................................... 58 Identification Operations ................................................................................................................................ 59 READ ID (90h) ............................................................................................................................................ 59 READ ID Parameter Tables .......................................................................................................................... 60 READ PARAMETER PAGE (ECh) .................................................................................................................. 61 Parameter Page Data Structure Tables ..................................................................................................... 62 READ UNIQUE ID (EDh) ............................................................................................................................ 72 Configuration Operations ............................................................................................................................... 73 SET FEATURES (EFh) .................................................................................................................................. 73 GET FEATURES (EEh) ................................................................................................................................. 74 Status Operations ........................................................................................................................................... 78 READ STATUS (70h) ................................................................................................................................... 79 READ STATUS ENHANCED (78h) ................................................................................................................ 80 Column Address Operations ........................................................................................................................... 81 CHANGE READ COLUMN (05h-E0h) .......................................................................................................... 81 CHANGE READ COLUMN ENHANCED (06h-E0h) ....................................................................................... 82 CHANGE WRITE COLUMN (85h) ................................................................................................................ 83 CHANGE ROW ADDRESS (85h) ................................................................................................................... 84 PDF: 09005aef83e0bed4 M73A_32Gb_64Gb_128Gb_256Gb_AsyncSync_NAND.pdf Rev. F 5/12 EN 3 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved.
Micron Confidential and Proprietary 32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND Features Read Operations ............................................................................................................................................. 86 READ MODE (00h) ..................................................................................................................................... 88 READ PAGE (00h-30h) ................................................................................................................................ 89 READ PAGE CACHE SEQUENTIAL (31h) ...................................................................................................... 90 READ PAGE CACHE RANDOM (00h-31h) .................................................................................................... 91 READ PAGE CACHE LAST (3Fh) .................................................................................................................. 93 READ PAGE MULTI-PLANE (00h-32h) ......................................................................................................... 94 Program Operations ....................................................................................................................................... 96 PROGRAM PAGE (80h-10h) ......................................................................................................................... 96 PROGRAM PAGE CACHE (80h-15h) ............................................................................................................. 98 PROGRAM PAGE MULTI-PLANE (80h-11h) ................................................................................................ 100 Erase Operations ........................................................................................................................................... 102 ERASE BLOCK (60h-D0h) ........................................................................................................................... 102 ERASE BLOCK MULTI-PLANE (60h-D1h) ................................................................................................... 103 Copyback Operations .................................................................................................................................... 104 COPYBACK READ (00h-35h) ...................................................................................................................... 105 COPYBACK PROGRAM (85h–10h) .............................................................................................................. 106 COPYBACK READ MULTI-PLANE (00h-32h) ............................................................................................... 106 COPYBACK PROGRAM MULTI-PLANE (85h-11h) ....................................................................................... 107 One-Time Programmable (OTP) Operations ................................................................................................... 108 PROGRAM OTP PAGE (80h-10h) ................................................................................................................ 109 PROTECT OTP AREA (80h-10h) .................................................................................................................. 110 READ OTP PAGE (00h-30h) ........................................................................................................................ 111 Multi-Plane Operations ................................................................................................................................. 112 Multi-Plane Addressing ............................................................................................................................. 112 Interleaved Die (Multi-LUN) Operations ......................................................................................................... 113 Error Management ........................................................................................................................................ 114 Output Drive Impedance ............................................................................................................................... 115 AC Overshoot/Undershoot Specifications ....................................................................................................... 118 Synchronous Input Slew Rate ......................................................................................................................... 119 Output Slew Rate ........................................................................................................................................... 120 Electrical Specifications ................................................................................................................................. 121 Electrical Specifications – DC Characteristics and Operating Conditions (Asynchronous) ................................. 124 Electrical Specifications – DC Characteristics and Operating Conditions (Synchronous) ................................... 125 Electrical Specifications – DC Characteristics and Operating Conditions (VCCQ) ............................................... 125 Electrical Specifications – AC Characteristics and Operating Conditions (Asynchronous) ................................. 126 Electrical Specifications – AC Characteristics and Operating Conditions (Synchronous) ................................... 128 Electrical Specifications – Array Characteristics .............................................................................................. 131 Asynchronous Interface Timing Diagrams ...................................................................................................... 132 Synchronous Interface Timing Diagrams ........................................................................................................ 143 Revision History ............................................................................................................................................ 165 Rev. F Production – 5/12 ............................................................................................................................ 165 Rev. E Production – 4/12 ............................................................................................................................ 165 Rev. D Production – 6/11 ............................................................................................................................ 165 Rev. C – 12/10 ............................................................................................................................................ 165 Rev. B – 7/10 .............................................................................................................................................. 165 Rev. A – 2/10 .............................................................................................................................................. 166 PDF: 09005aef83e0bed4 M73A_32Gb_64Gb_128Gb_256Gb_AsyncSync_NAND.pdf Rev. F 5/12 EN 4 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved.
Micron Confidential and Proprietary 32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND Features List of Tables Table 1: Asynchronous and Synchronous Signal Definitions .............................................................................. 9 Table 2: Array Addressing for Logical Unit (LUN) ............................................................................................ 31 Table 3: Asynchronous Interface Mode Selection ............................................................................................ 32 Table 4: Synchronous Interface Mode Selection .............................................................................................. 42 Table 5: Command Set .................................................................................................................................. 54 Table 6: Read ID Parameters for Address 00h .................................................................................................. 60 Table 7: Read ID Parameters for Address 20h .................................................................................................. 60 Table 8: Parameter Page Data Structure .......................................................................................................... 62 Table 9: Feature Address Definitions .............................................................................................................. 73 Table 10: Feature Address 01h: Timing Mode .................................................................................................. 75 Table 11: Feature Addresses 10h and 80h: Programmable Output Drive Strength .............................................. 76 Table 12: Feature Addresses 81h: Programmable R/B# Pull-Down Strength ...................................................... 76 Table 13: Feature Addresses 90h: Array Operation Mode ................................................................................. 77 Table 14: Status Register Definition ................................................................................................................ 78 Table 15: OTP Area Details ............................................................................................................................ 109 Table 16: Error Management Details ............................................................................................................. 114 Table 17: Output Drive Strength Conditions (VCCQ = 1.7–1.95V) ...................................................................... 115 Table 18: Output Drive Strength Impedance Values (VCCQ = 1.7–1.95V) ........................................................... 115 Table 19: Output Drive Strength Conditions (VCCQ = 2.7–3.6V) ....................................................................... 116 Table 20: Output Drive Strength Impedance Values (VCCQ = 2.7–3.6V) ............................................................ 116 Table 21: Pull-Up and Pull-Down Output Impedance Mismatch ..................................................................... 117 Table 22: Asynchronous Overshoot/Undershoot Parameters .......................................................................... 118 Table 23: Synchronous Overshoot/Undershoot Parameters ............................................................................ 118 Table 24: Test Conditions for Input Slew Rate ................................................................................................ 119 Table 25: Input Slew Rate (VCCQ = 1.7–1.95V) ................................................................................................. 119 Table 26: Test Conditions for Output Slew Rate .............................................................................................. 120 Table 27: Output Slew Rate (VCCQ = 1.7–1.95V) ............................................................................................... 120 Table 28: Output Slew Rate (VCCQ = 2.7–3.6V) ................................................................................................ 120 Table 29: Absolute Maximum Ratings by Device ............................................................................................ 121 Table 30: Recommended Operating Conditions ............................................................................................. 121 Table 31: Valid Blocks per LUN ...................................................................................................................... 121 Table 32: Capacitance: 100-Ball BGA Package ................................................................................................ 122 Table 33: Capacitance: 132-Ball BGA Package ................................................................................................ 123 Table 34: Capacitance: 48-Pin TSOP Package ................................................................................................. 123 Table 35: Capacitance: 52-Pad LGA Package .................................................................................................. 123 Table 36: Test Conditions .............................................................................................................................. 124 Table 37: DC Characteristics and Operating Conditions (Asynchronous Interface) .......................................... 124 Table 38: DC Characteristics and Operating Conditions (Synchronous Interface) ............................................ 125 Table 39: DC Characteristics and Operating Conditions (3.3V VCCQ) ............................................................... 125 Table 40: DC Characteristics and Operating Conditions (1.8V VCCQ) ............................................................... 126 Table 41: AC Characteristics: Asynchronous Command, Address, and Data ..................................................... 126 Table 42: AC Characteristics: Synchronous Command, Address, and Data ...................................................... 128 Table 43: Array Characteristics ...................................................................................................................... 131 PDF: 09005aef83e0bed4 M73A_32Gb_64Gb_128Gb_256Gb_AsyncSync_NAND.pdf Rev. F 5/12 EN 5 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved.
Micron Confidential and Proprietary 32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND Features List of Figures Figure 1: Part Numbering ................................................................................................................................ 2 Figure 2: 48-Pin TSOP Type 1 (Top View) ........................................................................................................ 11 Figure 3: 52-Pad LGA (Top View) .................................................................................................................... 12 Figure 4: 100-Ball BGA (Ball-Down, Top View) ................................................................................................ 13 Figure 5: 132-Ball BGA (Ball-Down, Top View) ................................................................................................ 14 Figure 6: 48-Pin TSOP – Type 1 CPL (Package Code: WP) ................................................................................. 15 Figure 7: 52-Pad VLGA ................................................................................................................................... 16 Figure 8: 100-Ball VBGA – 12mm x 18mm (Package Code: H1) ......................................................................... 17 Figure 9: 100-Ball TBGA – 12mm x 18mm (Package Code: H2) ......................................................................... 18 Figure 10: 100-Ball LBGA – 12mm x 18mm (Package Code: H3) ....................................................................... 19 Figure 11: 132-Ball VBGA – 12mm x 18mm (Package Code: J1) ......................................................................... 20 Figure 12: 132-Ball TBGA – 12mm x 18mm (Package Code: J2) ......................................................................... 21 Figure 13: 132-Ball LBGA – 12mm x 18mm (Package Code: J3) ......................................................................... 22 Figure 14: NAND Flash Die (LUN) Functional Block Diagram .......................................................................... 23 Figure 15: Device Organization for Single-Die Package (TSOP/BGA) ................................................................ 24 Figure 16: Device Organization for Two-Die Package (TSOP) ........................................................................... 25 Figure 17: Device Organization for Two-Die Package (BGA) ............................................................................. 26 Figure 18: Device Organization for Four-Die Package (TSOP) .......................................................................... 27 Figure 19: Device Organization for Four-Die Package with CE# and CE2# (BGA/LGA) ....................................... 28 Figure 20: Device Organization for Four-Die Package with CE#, CE2#, CE3#, and CE4# (BGA/LGA) ................... 29 Figure 21: Device Organization for Eight-Die Package (BGA/LGA) ................................................................... 30 Figure 22: Array Organization per Logical Unit (LUN) ..................................................................................... 31 Figure 23: Asynchronous Command Latch Cycle ............................................................................................ 33 Figure 24: Asynchronous Address Latch Cycle ................................................................................................ 34 Figure 25: Asynchronous Data Input Cycles .................................................................................................... 35 Figure 26: Asynchronous Data Output Cycles ................................................................................................. 36 Figure 27: Asynchronous Data Output Cycles (EDO Mode) ............................................................................. 37 Figure 28: READ/BUSY# Open Drain .............................................................................................................. 38 Figure 29: tFall and tRise (VCCQ = 2.7-3.6V) ...................................................................................................... 39 Figure 30: tFall and tRise (VCCQ = 1.7-1.95V) .................................................................................................... 39 Figure 31: IOL vs Rp (VCCQ = 2.7-3.6V) ............................................................................................................ 40 Figure 32: IOL vs Rp (VCCQ = 1.7-1.95V) .......................................................................................................... 40 Figure 33: TC vs Rp ........................................................................................................................................ 41 Figure 34: Synchronous Bus Idle/Driving Behavior ......................................................................................... 44 Figure 35: Synchronous Command Cycle ....................................................................................................... 45 Figure 36: Synchronous Address Cycle ........................................................................................................... 46 Figure 37: Synchronous DDR Data Input Cycles ............................................................................................. 47 Figure 38: Synchronous DDR Data Output Cycles ........................................................................................... 49 Figure 39: R/B# Power-On Behavior ............................................................................................................... 50 Figure 40: Activating the Synchronous Interface ............................................................................................. 53 Figure 41: RESET (FFh) Operation .................................................................................................................. 56 Figure 42: SYNCHRONOUS RESET (FCh) Operation ....................................................................................... 57 Figure 43: RESET LUN (FAh) Operation .......................................................................................................... 58 Figure 44: READ ID (90h) with 00h Address Operation .................................................................................... 59 Figure 45: READ ID (90h) with 20h Address Operation .................................................................................... 59 Figure 46: READ PARAMETER (ECh) Operation .............................................................................................. 61 Figure 47: READ UNIQUE ID (EDh) Operation ............................................................................................... 72 Figure 48: SET FEATURES (EFh) Operation .................................................................................................... 74 Figure 49: GET FEATURES (EEh) Operation .................................................................................................... 74 Figure 50: READ STATUS (70h) Operation ...................................................................................................... 80 PDF: 09005aef83e0bed4 M73A_32Gb_64Gb_128Gb_256Gb_AsyncSync_NAND.pdf Rev. F 5/12 EN 6 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved.
Micron Confidential and Proprietary 32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND Features Figure 51: READ STATUS ENHANCED (78h) Operation ................................................................................... 80 Figure 52: CHANGE READ COLUMN (05h-E0h) Operation ............................................................................. 81 Figure 53: CHANGE READ COLUMN ENHANCED (06h-E0h) Operation .......................................................... 82 Figure 54: CHANGE WRITE COLUMN (85h) Operation ................................................................................... 83 Figure 55: CHANGE ROW ADDRESS (85h) Operation ...................................................................................... 85 Figure 56: READ PAGE (00h-30h) Operation ................................................................................................... 89 Figure 57: READ PAGE CACHE SEQUENTIAL (31h) Operation ......................................................................... 90 Figure 58: READ PAGE CACHE RANDOM (00h-31h) Operation ....................................................................... 92 Figure 59: READ PAGE CACHE LAST (3Fh) Operation ..................................................................................... 93 Figure 60: READ PAGE MULTI-PLANE (00h-32h) Operation ............................................................................ 95 Figure 61: PROGRAM PAGE (80h-10h) Operation ............................................................................................ 97 Figure 62: PROGRAM PAGE CACHE (80h–15h) Operation (Start) ..................................................................... 99 Figure 63: PROGRAM PAGE CACHE (80h–15h) Operation (End) ...................................................................... 99 Figure 64: PROGRAM PAGE MULTI-PLANE (80h–11h) Operation ................................................................... 101 Figure 65: ERASE BLOCK (60h-D0h) Operation ............................................................................................. 102 Figure 66: ERASE BLOCK MULTI-PLANE (60h–D1h) Operation ...................................................................... 103 Figure 67: COPYBACK READ (00h-35h) Operation ......................................................................................... 105 Figure 68: COPYBACK READ (00h–35h) with CHANGE READ COLUMN (05h–E0h) Operation ......................... 105 Figure 69: COPYBACK PROGRAM (85h–10h) Operation ................................................................................. 106 Figure 70: COPYBACK PROGRAM (85h-10h) with CHANGE WRITE COLUMN (85h) Operation ........................ 106 Figure 71: COPYBACK PROGRAM MULTI-PLANE (85h-11h) Operation .......................................................... 107 Figure 72: PROGRAM OTP PAGE (80h-10h) Operation ................................................................................... 109 Figure 73: PROGRAM OTP PAGE (80h-10h) with CHANGE WRITE COLUMN (85h) Operation ......................... 110 Figure 74: PROTECT OTP AREA (80h-10h) Operation ..................................................................................... 111 Figure 75: READ OTP PAGE (00h-30h) Operation ........................................................................................... 111 Figure 76: Overshoot .................................................................................................................................... 118 Figure 77: Undershoot .................................................................................................................................. 118 Figure 78: RESET Operation .......................................................................................................................... 132 Figure 79: RESET LUN Operation .................................................................................................................. 132 Figure 80: READ STATUS Cycle ..................................................................................................................... 133 Figure 81: READ STATUS ENHANCED Cycle .................................................................................................. 133 Figure 82: READ PARAMETER PAGE ............................................................................................................. 134 Figure 83: READ PAGE .................................................................................................................................. 134 Figure 84: READ PAGE Operation with CE# “Don’t Care” ............................................................................... 135 Figure 85: CHANGE READ COLUMN ............................................................................................................ 136 Figure 86: READ PAGE CACHE SEQUENTIAL ................................................................................................ 137 Figure 87: READ PAGE CACHE RANDOM ...................................................................................................... 138 Figure 88: READ ID Operation ...................................................................................................................... 139 Figure 89: PROGRAM PAGE Operation .......................................................................................................... 139 Figure 90: PROGRAM PAGE Operation with CE# “Don’t Care” ........................................................................ 140 Figure 91: PROGRAM PAGE Operation with CHANGE WRITE COLUMN ......................................................... 140 Figure 92: PROGRAM PAGE CACHE .............................................................................................................. 141 Figure 93: PROGRAM PAGE CACHE Ending on 15h ........................................................................................ 141 Figure 94: COPYBACK .................................................................................................................................. 142 Figure 95: ERASE BLOCK Operation .............................................................................................................. 142 Figure 96: SET FEATURES Operation ............................................................................................................ 143 Figure 97: READ ID Operation ...................................................................................................................... 144 Figure 98: GET FEATURES Operation ............................................................................................................ 145 Figure 99: RESET (FCh) Operation ................................................................................................................ 146 Figure 100: READ STATUS Cycle ................................................................................................................... 147 Figure 101: READ STATUS ENHANCED Operation ......................................................................................... 148 Figure 102: READ PARAMETER PAGE Operation ............................................................................................ 149 PDF: 09005aef83e0bed4 M73A_32Gb_64Gb_128Gb_256Gb_AsyncSync_NAND.pdf Rev. F 5/12 EN 7 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved.
Micron Confidential and Proprietary 32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND Features Figure 103: READ PAGE Operation ................................................................................................................ 150 Figure 104: CHANGE READ COLUMN ........................................................................................................... 151 Figure 105: READ PAGE CACHE SEQUENTIAL (1 of 2) ................................................................................... 152 Figure 106: READ PAGE CACHE SEQUENTIAL (2 of 2) ................................................................................... 153 Figure 107: READ PAGE CACHE RANDOM (1 of 2) ......................................................................................... 154 Figure 108: READ PAGE CACHE RANDOM (2 of 2) ......................................................................................... 154 Figure 109: Multi-Plane Read Page (1 of 2) ..................................................................................................... 155 Figure 110: Multi-Plane Read Page (2 of 2) ..................................................................................................... 156 Figure 111: PROGRAM PAGE Operation (1 of 2) ............................................................................................. 157 Figure 112: PROGRAM PAGE Operation (2 of 2) ............................................................................................. 157 Figure 113: CHANGE WRITE COLUMN ......................................................................................................... 158 Figure 114: Multi-Plane Program Page ........................................................................................................... 159 Figure 115: ERASE BLOCK ............................................................................................................................ 160 Figure 116: COPYBACK (1 of 3) ..................................................................................................................... 160 Figure 117: COPYBACK (2 of 3) ..................................................................................................................... 161 Figure 118: COPYBACK (3 of 3) ..................................................................................................................... 161 Figure 119: READ OTP PAGE ......................................................................................................................... 162 Figure 120: PROGRAM OTP PAGE (1 of 2) ...................................................................................................... 163 Figure 121: PROGRAM OTP PAGE (2 of 2) ...................................................................................................... 163 Figure 122: PROTECT OTP AREA ................................................................................................................... 164 PDF: 09005aef83e0bed4 M73A_32Gb_64Gb_128Gb_256Gb_AsyncSync_NAND.pdf Rev. F 5/12 EN 8 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved.
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