DS28E01中文资料.pdf-资料库

Rev 5; 7/10 ® ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ °° ♦ VCC μC RPUP IO DS28E01-100 GND PART DS28E01P-100+ DS28E01P-100+T DS28E01G-100+T&R TEMP RANGE -40°C to +85°C -40°C to +85°C -40°C to +85°C DS28E01Q-100+T&R -40°C to +85°C PIN-PACKAGE 6 TSOC 6 TSOC 2 SFN 6 TDFN-EP* (2.5k pcs) + * 本文是英文数据资料的译文，文中可能存在翻译上的不准确或错误。如需进一步确认，请在您的设计中参考英文资料。有关价格、供货及订购信息，请联络Maxim亚洲销售中心：10800 852 1249 (北中国区)，10800 152 1249 (南中国区)，或访问Maxim的中文网站：china.maximintegrated.com。AVAILABLEDS28E01-100

ABSOLUTE MAXIMUM RATINGS IO Voltage Range to GND .......................................-0.5V to +6V IO Sink Current ...................................................................20mA Operating Temperature Range ...........................-40°C to +85°C Junction Temperature......................................................+150°C Storage Temperature Range .............................-55°C to +125°C Lead Temperature (TSOC, TDFN only; soldering, 10s)...+300°C Soldering Temperature (reflow) TSOC, TDFN .................................................................+260°C SFN .......Refer to Application Note 4132: Attachment Methods for the Electro-Mechanical SFN Package. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS (TA = -40°C to +85°C.) (Note 1) SYMBOL CONDITIONS MIN TYP MAX UNITS PARAMETER IO PIN: GENERAL DATA 1-Wire Pullup Voltage 1-Wire Pullup Resistance Input Capacitance Input Load Current High-to-Low Switching Threshold Input Low Voltage Low-to-High Switching Threshold Switching Hysteresis Output Low Voltage Recovery Time (Notes 2,12) Rising-Edge Hold-Off Time (Notes 5, 13) VPUP RPUP CIO IL VTL VIL VTH VHY VOL tREC tREH (Note 2) (Notes 2, 3) (Notes 4, 5) IO pin at VPUP (Notes 5, 6, 7) (Notes 2, 8) (Notes 5, 6, 9) (Notes 5, 6, 10) At 4mA current load (Note 11) Standard speed, RPUP = 2.2k Overdrive speed, RPUP = 2.2k Overdrive speed, directly prior to reset pulse; RPUP = 2.2k Standard speed Overdrive speed Standard speed Overdrive speed 2.8 0.3 0.05 0.46 1.0 0.21 5 2 5 0.5 5.25 2.2 1000 6.7 VPUP - 1.8 0.5 VPUP - 1.1 1.70 0.4 5.0 Not applicable (0) 65 8 V k pF μA V V V V V μs μs μs μs μs μs μs Time Slot Duration (Notes 2, 14) IO PIN: 1-Wire RESET, PRESENCE-DETECT CYCLE tSLOT Reset Low Time (Note 2) Presence-Detect High Time Presence-Detect Low Time Presence-Detect Sample Time (Notes 2, 15) tRSTL tPDH tPDL tMSP Standard speed Overdrive speed Standard speed Overdrive speed Standard speed Overdrive speed Standard speed Overdrive speed 480 48 15 2 60 8 60 6 640 80 60 6 240 24 75 10 DS28E01-1002Maxim Integrated2

ELECTRICAL CHARACTERISTICS (continued) (TA = -40°C to +85°C.) (Note 1) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS IO PIN: 1-Wire WRITE Write-Zero Low Time (Notes 2, 16, 17) Write-One Low Time (Notes 2, 17) IO PIN: 1-Wire READ Read Low Time (Notes 2, 18) Read Sample Time (Notes 2, 18) EEPROM Programming Current Programming Time Write/Erase Cycles (Endurance) (Notes 21, 22) Data Retention (Notes 23, 24, 25) SHA-1 ENGINE Computation Current Computation Time (Notes 5, 26) tW0L tW1L tRL tMSR Standard speed Overdrive speed, VPUP > 4.5V Overdrive speed Standard speed Overdrive speed Standard speed Overdrive speed Standard speed Overdrive speed IPROG tPROG NCY (Notes 5, 19) (Note 20) At +25°C At +85°C (worst case) tDR At +85°C (worst case) 60 5 6 1 1 5 1 tRL + tRL + 200k 50k 40 ILCSHA tCSHA Refer to the full data sheet. 120 15.5 15.5 15 2 15 - 2 - 15 2 0.8 10 μs μs μs μs mA ms Years mA ms Note 1: Note 2: Note 3: Maximum allowable pullup resistance is a function of the number of 1-Wire devices in the system and 1-Wire recovery times. Specifications at TA = -40°C are guaranteed by design only and not production tested. System requirement. The specified value here applies to systems with only one device and with the minimum 1-Wire recovery times. For more heavily loaded systems, an active pullup such as that found in the DS2482-x00, DS2480B, or DS2490 may be required. Note 4: Maximum value represents the internal parasite capacitance when VPUP is first applied. If a 2.2kΩ pullup resistor is used, the parasite capacitance does not affect normal communications 2.5μs after VPUP has been applied. Note 5: Guaranteed by design, characterization, and/or simulation only. Not production tested. Note 6: VTL, VTH, and VHY are a function of the internal supply voltage, which is a function of VPUP, RPUP, 1-Wire timing, and capacitive loading on IO. Lower VPUP, higher RPUP, shorter tREC, and heavier capacitive loading all lead to lower values of VTL, VTH, and VHY. Voltage below which, during a falling edge on IO, a logic 0 is detected. The voltage on IO must be less than or equal to VILMAX at all times the master is driving IO to a logic 0 level. Voltage above which, during a rising edge on IO, a logic 1 is detected. Note 7: Note 8: Note 9: Note 10: After VTH is crossed during a rising edge on IO, the voltage on IO must drop by at least VHY to be detected as logic 0. Note 11: The I-V characteristic is linear for voltages less than 1V. Note 12: Applies to a single device attached to a 1-Wire line. Note 13: The earliest recognition of a negative edge is possible at tREH after VTH has been reached on the preceding rising edge. Note 14: Defines maximum possible bit rate. Equal to tW0LMIN + tRECMIN. Note 15: Interval after tRSTL during which a bus master is guaranteed to sample a logic 0 on IO if there is a DS28E01-100 present. Minimum limit is tPDHMAX; maximum limit is tPDHMIN + tPDLMIN. Note 16: Numbers in bold are not in compliance with legacy 1-Wire product standards. See the Comparison Table. Maxim Integrated3DS28E01-100

ELECTRICAL CHARACTERISTICS (continued) (TA = -40°C to +85°C.) (Note 1) Note 17: ε in Figure 12 represents the time required for the pullup circuitry to pull the voltage on IO up from VIL to VTH. The actual maximum duration for the master to pull the line low is tW1LMAX + tF - ε and tW0LMAX + tF - ε, respectively. Note 18: δ in Figure 12 represents the time required for the pullup circuitry to pull the voltage on IO up from VIL to the input-high threshold of the bus master. The actual maximum duration for the master to pull the line low is tRLMAX + tF. Note 19: Current drawn from IO during the EEPROM programming interval or SHA-1 computation. Note 20: Refer to the full data sheet for this note. Note 21: Write-cycle endurance is degraded as TA increases. Note 22: Not 100% production tested; guaranteed by reliability monitor sampling. Note 23: Data retention is degraded as TA increases. Note 24: Guaranteed by 100% production test at elevated temperature for a shorter time; equivalence of this production test to the data sheet limit at operating temperature range is established by reliability testing. Note 25: EEPROM writes can become nonfunctional after the data-retention time is exceeded. Long-term storage at elevated tem- Note 26: peratures is not recommended; the device can lose its write capability after 10 years at +125°C or 40 years at +85°C. Refer to the full data sheet for this note. LEGACY VALUES DS28E01-100 VALUES PARAMETER STANDARD SPEED OVERDRIVE SPEED STANDARD SPEED OVERDRIVE SPEED (μs) (μs) (μs) (μs) tSLOT (including tREC) tRSTL tPDH tPDL tW0L MIN 61 480 15 60 60 MAX MIN MAX (undefined) (undefined) 60 240 120 7 48 2 8 6 (undefined) 80 6 24 16 MIN 65* 480 15 60 60 MAX (undefined) 640 60 240 120 MIN 8* 48 2 8 6 MAX (undefined) 80 6 24 15.5 * DS28E01-1004Maxim Integrated4

TSOC TDFN-EP SFN 1 2 3 2 3, 4, 5, 6 1, 4, 5, 6 — EP 2 1 — — GND IO N.C. EP Maxim Integrated5DS28E01-100

PARASITE POWER 1-Wire NET 1-Wire FUNCTION CONTROL 64-BIT LASERED ROM MEMORY AND SHA-1 FUNCTION CONTROL UNIT DS28E01-100 CRC-16 GENERATOR DATA MEMORY 4 PAGES OF 256 BITS EACH REGISTER PAGE 512-BIT SECURE HASH ALGORITHM ENGINE 64-BIT SCRATCHPAD SECRETS MEMORY 64 BITS ® DS28E01-1006Maxim Integrated6

COMMAND LEVEL: AVAILABLE COMMANDS: DATA FIELD AFFECTED: DS28E01-100 1-Wire ROM FUNCTION COMMANDS (SEE FIGURE 10) READ ROM MATCH ROM SEARCH ROM SKIP ROM RESUME OVERDRIVE-SKIP ROM OVERDRIVE-MATCH ROM 64-BIT REG. #, RC-FLAG 64-BIT REG. #, RC-FLAG 64-BIT REG. #, RC-FLAG RC-FLAG RC-FLAG RC-FLAG, OD-FLAG 64-BIT REG. #, RC-FLAG, OD-FLAG DEVICE-SPECIFIC MEMORY FUNCTION COMMANDS (SEE FIGURE 8) Refer to the full data sheet. MSB MSB 8-BIT CRC CODE LSB MSB 48-BIT SERIAL NUMBER 8-BIT FAMILY CODE LSB MSB LSB LSB POLYNOMIAL = X8 + X5 + X4 + 1 1ST STAGE 2ND STAGE 3RD STAGE 4TH STAGE 5TH STAGE 6TH STAGE 7TH STAGE 8TH STAGE X0 X1 X2 X3 X4 X5 X6 X7 X8 INPUT DATA Maxim Integrated7DS28E01-100

BIT # 7 TARGET ADDRESS (TA1) T7 6 T6 5 T5 4 T4 3 T3 2 T2 (0) 1 T1 (0) 0 T0 (0) TARGET ADDRESS (TA2) T15 T14 T13 T12 T11 T10 T9 T8 ENDING ADDRESS WITH DATA STATUS (E/S) (READ ONLY) AA 1 PF 1 1 E2 (1) E1 (1) E0 (1) DS28E01-1008Maxim Integrated8

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