logo资料库

高通骁龙820芯片手册.pdf

发布时间：2022-06-21 发布人：admin 分类：说明书 资料大小：2.27M 资料格式：pdf 举报 版权申诉
第1页 / 共139页
第2页 / 共139页
第3页 / 共139页
第4页 / 共139页
第5页 / 共139页
第6页 / 共139页
第7页 / 共139页
第8页 / 共139页
资料共139页，剩余部分请下载后查看
    Qualcomm Technologies, Inc. MSM8996/APQ8096/MSM8996SG/APQ8096SG Device Specification 80-NT204-1 Rev. P February 9, 2016 For additional information or to submit technical questions go to https://createpoint.qti.qualcomm.com Confidential and Proprietary – Qualcomm Technologies, Inc. NO PUBLIC DISCLOSURE PERMITTED: Please report postings of this document on public servers or websites to: DocCtrlAgent@qualcomm.com. Restricted Distribution: Not to be distributed to anyone who is not an employee of either Qualcomm Technologies, Inc. or its affiliated companies without the express approval of Qualcomm Configuration Management. Not to be used, copied, reproduced, or modified in whole or in part, nor its contents revealed in any manner to others without the express written permission of Qualcomm Technologies, Inc. Fluence, MSM, Qualcomm Adreno, Qualcomm Secure Execution Environment, Qualcomm Hexagon, Qualcomm Kryo, Qualcomm RF360, and Qualcomm Snapdragon are products of Qualcomm Technologies, Inc. Qualcomm IZat is a product of Qualcomm Atheros, Inc. Other Qualcomm products referenced herein are products of Qualcomm Technologies, Inc. or its subsidiaries. Adreno, Fluence, Hexagon, MSM, Qualcomm, Qualcomm RF360, and Snapdragon are trademarks of Qualcomm Incorporated, registered in the United States and other countries. IZat and Kryo are trademarks of Qualcomm Incorporated. Other product and brand names may be trademarks or registered trademarks of their respective owners. This technical data may be subject to U.S. and international export, re-export, or transfer (“export”) laws. Diversion contrary to U.S. and international law is strictly prohibited. Qualcomm Technologies, Inc. 5775 Morehouse Drive San Diego, CA 92121 U.S.A. © 2014-2016 Qualcomm Technologies, Inc. All rights reserved.
    Revision history Bars appearing in the margin (as shown here) indicate where technical changes have occurred for this revision. The following table lists the technical content changes for all revisions. Revision Date Description A B C February 2015 November 11, 2014 Initial release November 12, 2014 Section 2.2.2 Pin descriptions – MSM bottom: Removed an incorrect table on GPIO functions  Section 1.1 Documentation overview: Updated the software reference document to MSM8996 Hardware Register Description (80-NT204-2X)  Section 1.2 MSM8996 introduction:  Updated the block diagram and package designator  Removed QFE2520 from supported devices  Removed QCA1990A from supported devices  Section 1.3 MSM8996 features: Updated the APC and LPDDR4 target frequencies  Figure 2-3 High-level view of MSM8996 bottom pin assignments (from above, through package): Updated the bottom pin assignments diagram  Table 2-5 Pin descriptions – connectivity functions: Changed the naming convention for the additional BLSP chip selects  Table 2-10 Pin descriptions – chipset interface functions: Removed QCA1990A from interfaces  Table 2-12 Pin descriptions – general-purpose input/output ports: Changed the naming convention for the additional BLSP chip selects  Table 2-13 Pin descriptions – no connection, do not connect, and reserved pins: Updated the NC, DNC, and RSVD pin connections to match the changes in bottom pin assignments in Figure 2-3  Table 2-14 Pin descriptions – power supply pins: Updated the power supply pin connections to match the changes in bottom pin assignments in Figure 2-3  Table 2-15 Pin descriptions – ground pins: Updated the GND pin connections to match the changes in bottom pin assignments in Figure 2-3  Section 4.1 Device physical dimensions: Updated the package details with download link to the package outline drawing  Section 1.3.1, New features integrated into the MSM8996 and Table 1-2, Summary of MSM8996 device features:  Changed the name CPU to Kryo  Changed the Fast CPU target frequency to 2.1-2.25 GHz  Added the modem name as X12 D March 2015 80-NT204-1 Rev. P Confidential and Proprietary – Qualcomm Technologies, Inc. MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 2
    MSM8996/APQ8096/MSM8996SG/APQ8096SG Device Specification Revision history Revision D (cont.) Date March 2015 E June 2, 2015 Description  Figure 2-3, High-level view of MSM8996 bottom pin assignments (from above, through package); Table 2-13, Pin descriptions – no connection, do not connect, and reserved pins; Table 2-14, Pin descriptions – power supply pins; Figure 2-6, High-level view of MSM8996 top pin assignments (from above); Table 2-19, Pin description – UFS memory:  Changed some DNC and RSVD pins to support UFS POP (uPOP)  Added Section 3.2, Operating conditions  Figure 1-1 MSM8996 functional block diagram and example application: Removed the UFS (optional) block and renamed eUFS to UFS  Section 1.3.1 New features integrated into the MSM8996  Updated the Kryo core targets and Qualcomm Adreno GPU speeds  Changed X12 modem support to LTE CAT12  Changed the DSI DPHY version to 1.2  Table 1-2 Summary of MSM8996 device features  Updated the Kryo core targets and Adreno GPU speeds  Updated the video and camera feature support  Changed the DSI DPHY version to 1.2  Table 1-3 Key X12 modem features: Updated the LTE category feature description  Figure 2-3 Pin descriptions – memory support functions  Corrected the pin name for D26 to EBI_ZQ2  Changed UFS-POP related pin names to DNC as uPOP has been defeatured  Corrected GPIO_9, GPIO_50, and GPIO_54 default pull state in Table 2-5 Pin descriptions – connectivity functions, Table 2-7 Pin descriptions – internal functions, Table 2-8 MSM8996 wakeup pins for MSM power management (MPM), and Table 2-12 Pin descriptions – general-purpose input/output ports  Table 2-12 Pin descriptions – general-purpose input/output ports: Removed QSPI functions  Updated Figure 4-1 994C MNSP (15.6 × 15 × 0.69 mm) outline drawing  Added content to the following sections or chapters for the first time:  Section 3.3 Power distribution network through Section 3.11 Internal functions  Section 4.2 Part marking  Section 4.3 Device ordering information  Section 4.4 Device moisture sensitivity level  Section 4.5 Thermal characteristics  Chapter 5 Carrier, handling, and storage information  Chapter 6 PCB mounting guidelines 80-NT204-1 Rev. P Confidential and Proprietary – Qualcomm Technologies, Inc. MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 3
    MSM8996/APQ8096/MSM8996SG/APQ8096SG Device Specification Revision history Revision Date F June 5, 2015 G July 2015 Description  Removed (Advance Information) from the document title  Figure 1-1, MSM8996 functional block diagram and example application: changed the TD-HSPA to 256 QAM  Section 1.2, MSM8996 introduction:  Changed the TD-HSPA to 256 QAM  Updated LTE support to Cat 12 and data rates to 600 Mbps download, 150 Mbps upload  Added reference to PoP requirement document 80-VP300-9  Added WTR3950 reference documents family number  Table 1-2, Summary of MSM8996 device features: Corrected DSI DPHY to DPHY1.2 and VESA DSC to 1.1  Figure 2-3, High-level view of MSM8996 bottom pin assignments (from above, through package): Corrected pad name for BF20 to HDMI_REXT  Table 2-12, Pin descriptions – general-purpose input/output ports: Added function and description PA_INDICATOR to GPIO_116  Figure 2-6, High-level view of MSM8996 top pin assignments (from above): Changed uPOP pins on the top side to DNC  Table 2-17, Pin descriptions – no connection, do not connect, and reserved pins: Added uPOP pins on the top side to DNC  Deleted Table 2-19 Pin Description – UFS Memory  Section 1.3.1 New features integrated into the MSM8996 and Table 1-2 Summary of MSM8996 device features: Increased the gold applications processor cluster target from 2.0 GHz to 2.15 GHz  Figure 2-3 High-level view of MSM8996 bottom pin assignments (from above, through package): Corrected the pin name of pad AM8 from PCIE0_REXT to PCIE_REXT  Table 3-4 MSM8996 PDN specifications – EBI: Split the maximum impedance values to reflect both lumped and distributed DC and added a footnote  Section 3.4 Power sequencing: Swapped steps 6 and 8  Figure 4-3 Device identification code and Table 4-2 Device identification details: Corrected the feature code from AC to AB  Updated document links in the following locations:  Section 4.1 Device physical dimensions  Section 4.5 Thermal characteristics 80-NT204-1 Rev. P Confidential and Proprietary – Qualcomm Technologies, Inc. MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 4
    MSM8996/APQ8096/MSM8996SG/APQ8096SG Device Specification Revision history Revision Date H August 2015 Description  Global change: Updated the package size from 15.6 × 15 × 0.69 mm to 15.6 × 15 × 0.64 mm  Table 1-2 Summary of MSM8996 device features: Updated the LTE air interface capability  Table 2-8 MSM8996 wakeup pins for MSM power management (MPM): Updated the description for all SSC_IRQ interrupts  Added Table 3-1 Operating conditions for voltage rails with AVS Type-1  Table 3-2 Operating voltages:  Moved voltage rails with AVS Type-1 to Table 3-1  Updated minimum and maximum values throughout the table  Moved VDD_QFPROM_PRG to VDD_A2  Added thermal condition parameters and a related footnote  Section 4.1 Device physical dimensions:  Updated the outline drawing DCN and link  Added a note about the MSM8996 bottom package  Figure 4-1 994C MNSP (15.6 × 15 × 0.64 mm) outline drawing: Updated the diagram  Section 6.2.1 Land pad and stencil design: Updated the document link  Section 6.3 Daisy chain components: Updated the document link Revision I was omitted in accordance with QTI document conventions. 80-NT204-1 Rev. P Confidential and Proprietary – Qualcomm Technologies, Inc. MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 5
    MSM8996/APQ8096/MSM8996SG/APQ8096SG Device Specification Revision history Revision Date J September 2015 Description  Global change: Replaced QCA9500 with QCA6320/QCA6310 as the WiGig component standard throughout document  Section 1.1 Documentation overview: Added note to indicate that certain features are applicable to the MSM8996 device but not the APQ8096 device. This includes the following sections:  Section 1.3.3 Air interface features  Table 1-2 Summary of MSM8996 device features  Table 1-3 Key X12 modem features (Not applicable to APQ8096)  Added new figure Figure 1-2 APQ8096 functional block diagram and example application  Section 1.3.1 New features integrated into the MSM8996 and Table 1-2 Summary of MSM8996 device features: Updated frequencies for gold and silver Kryo core clusters  Table 2-7 Pin descriptions – internal functions: Updated pad type characteristics for JTAG interface functions  Table 2-10 Pin descriptions – chipset interface functions: Updated the following:  Added footnotes regarding Qualcomm interfaces as they relate to the APQ8096 device  Added notes after the Rx baseband interface, the Tx baseband interface, and the GSM transmit phase adjust signals, as they relate to the APQ8096 device  Section 3.7.1 EBI0 and EBI1 memory support: Added description of EBI0 and EBI1 ports dedicated to the PoP LPDDR4 SDRAM memory  Added Section 4.3 APQ8096 part marking  Added Figure 4-3 APQ8096 device marking (top view, not to scale)  Table 4-3 P1: MSM8996 device identification details:  Added new identification details for ES3.0 sample and additional rows describing new ES3.1 samples  Added Table 4-4 APQ8096 device identification details  Section 7.2 Qualification sample description: Updated device name 80-NT204-1 Rev. P Confidential and Proprietary – Qualcomm Technologies, Inc. MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 6
    MSM8996/APQ8096/MSM8996SG/APQ8096SG Device Specification Revision history Revision Date K November 3, 2015 Description  Table 1-3 Key X12 modem features (not applicable to APQ8096): Removed simultaneous voice and data  Table 2-1 I/O description (pad type) parameters: Added the drive strength for the UIM 1.8 V pads  Section 2.2.1 Pin map – MSM bottom: Added document link for MSM8996 Pin Assignments (80-NT204-1A)  Table 3-1 Operating conditions for voltage rails with AVS Type-1: Added the operating conditions for the rails of the MSM8996 device with AVS type 1  Added:  Section 3.2.1 Core and memory voltage minimization (retention mode)  Section 3.4.1 Average operating current  Section 3.4.2 Dhrystone and rock bottom maximum power  Table 3-9 Dhrystone and rock bottom maximum power for MSM8996 devices  Figure 4-2 MSM8996 device marking (top view, not to scale): Updated the layout and descriptions  Table 4-1 MSM8996 marking line definitions: Updated numbering and descriptions  Figure 4-3 APQ8096 device marking (top view, not to scale): Updated the layout and descriptions  Table 4-2 APQ8096 marking line definitions: Updated numbering and descriptions  Table 4-3 MSM8996 device identification details: Added ES3.1.3/CS device identification details and the date code for the MSM8996 CS parts; removed LPDDR4 1866 MHz from comments  Table 4-4 APQ8096 device identification details: Added ES3.1.3/CS device identification details and the date code for the APQ8096 CS parts; removed LPDDR4 1866 MHz from comments; added A530 GPU frequency in comments  Section 6.2 SMT assembly guidelines: Replaced SMT parameters section with this new section per guidelines  Removed sections 6.4 and 6.5 per guidelines which can be obtained from document references in Section 6.2 L November 10, 2015  Figure 2-3 High-level view of MSM8996 bottom pin assignments (from above, through package): Corrected the pin name for BF40 from EBI_RF to VREF_EBI  Section 4.1 Device physical dimensions: Changed the coplanarity specification to 130 µm and corrected the link to NT90-NU784-3  Table 4-1 MSM8996 marking line definitions, Table 4-2 APQ8096 marking line definitions: Added Amkor, Japan to assembly site code  Figure 5-1 Carrier tape drawing with part orientation: Modified drawing by removing “Qualcomm” logo and corrected pin 1 location M December 2015  Added Section 7.1 Reliability qualifications summary 80-NT204-1 Rev. P Confidential and Proprietary – Qualcomm Technologies, Inc. MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 7
    MSM8996/APQ8096/MSM8996SG/APQ8096SG Device Specification Revision history Revision Date N January 2016 Description  Revised the document title and Section 1.1 Documentation overview to include MSM8996Pro and APQ8096Pro  Added Section 1.3.2 New features integrated into the MSM8996Pro chipset  Revised VDD_EBI_x values and added SVS2 values in Table 3-1 Operating conditions for voltage rails with AVS Type-1  Revised the VDD_DDR_CORE_1P2 parameter description from 1.155 V to VDD2 in Table 3-2 Operating voltages  Replaced TBDs with values in Table 7-1 Silicon reliability results  Revised result details in Table 7-2 Package reliability results Revision O was omitted in accordance with QTI document conventions. P February 2016  Revised the document title and Section 1.1 Documentation overview to change MSM8996Pro/APQ8096Pro to MSM8996SG/APQ8096SG  Table 3-11 Digital I/O characteristics for VDD_P7 = 1.8 V nominal (SDC1): Removed the VDD_Px parameter  Table 3-12 Digital I/O characteristics for VDD_P2 = 2.95 V nominal (SDC2): Removed the VDD_Px parameter  Table 3-13 Digital I/O characteristics for VDD_P2 = 1.8 V nominal (SDC2): Removed the VDD_Px parameter  Table 3-14 Digital I/O characteristics for VDD_Px = 2.95 V nominal (UIM1 and UIM2 – Class B): Removed the VDD_Px parameter  Table 3-15 Digital I/O characteristics for VDD_Px = 1.8 V nominal (UIM1 and UIM2 – Class B): Removed the VDD_Px parameter  Section 4.4 MSM8996SG part marking: Added device marking for MSM8996SG  Section 4.5 APQ8096SG part marking: Added device marking for APQ8096SG  Table 4-5 MSM8996SG device identification details: Added MSM8996SG sample devices  Table 4-6 APQ8096SG device identification details: Added APQ8096SG sample devices 80-NT204-1 Rev. P Confidential and Proprietary – Qualcomm Technologies, Inc. MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION 8
    分享到：
    赞 收藏

    相关推荐

    资料库

    移动开发

    共收录1376份资料，累计14个分类，关注成员有19位，主要包括：IOS,Symbian,webOS,WindowsPhone,小程序,Flash,BlackBerry,bada,JavaME,HTML5,iOS,Android,QT,其它

    热门标签

    IOS Symbian webOS WindowsPhone 小程序 Flash BlackBerry bada JavaME HTML5 iOS Android QT 其它

    最新资料