技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF200R12KT4
Turn-ondelaytime,inductiveload
上升时间(电感负载)
Risetime,inductiveload
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
下降时间(电感负载)
Falltime,inductiveload
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
短路数据
SCdata
结-外壳热阻
Thermalresistance,junctiontocase
外壳-散热器热阻
Thermalresistance,casetoheatsink
在开关状态下温度
Temperatureunderswitchingconditions
VGE = ±15 V
RGon = 2,4 W
IC = 200 A, VCE = 600 V
VGE = ±15 V
RGon = 2,4 W
IC = 200 A, VCE = 600 V
VGE = ±15 V
RGoff = 2,4 W
IC = 200 A, VCE = 600 V
VGE = ±15 V
RGoff = 2,4 W
IC = 200 A, VCE = 600 V, LS = 30 nH
VGE = ±15 V, di/dt = 4000 A/µs (Tvj = 150°C)
RGon = 2,4 W
IC = 200 A, VCE = 600 V, LS = 30 nH
VGE = ±15 V, du/dt = 4500 V/µs (Tvj = 150°C)
RGoff = 2,4 W
VGE £ 15 V, VCC = 900 V
VCEmax = VCES -LsCE ·di/dt
tP £ 10 µs,
Tvj = 125°C
Tvj = 150°C
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Tvj = 150°C
每个IGBT/perIGBT
每个IGBT/perIGBT
l Paste=1W/(m·K)/l grease=1W/(m·K)
tr
td off
tf
Eon
Eoff
ISC
RthJC
RthCH
0,17
0,18
0,04
0,045
0,50
0,45
0,52
0,54
0,10
0,16
0,16
10,0
15,0
17,0
14,0
20,0
23,0
800
0,135 K/W
0,034
K/W
Tvj op
-40
150
62mmC-SerienModulmitschnellemTrench/FeldstoppIGBT4undoptimierterEmitterControlledDiode
62mmC-seriesmodulewithfasttrench/fieldstopIGBT4andoptimizedEmitterControlleddiode
初步数据
PreliminaryData
preparedby:MK
approvedby:WR
dateofpublication:2013-11-04
revision:2.0
1
W
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF200R12KT4
初步数据
PreliminaryData
preparedby:MK
approvedby:WR
dateofpublication:2013-11-04
revision:2.0
2
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF200R12KT4
初步数据
PreliminaryData
preparedby:MK
approvedby:WR
dateofpublication:2013-11-04
revision:2.0
3
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF200R12KT4
初步数据
PreliminaryData
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=150°C
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
400
360
320
280
240
200
160
120
80
40
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
400
360
320
280
240
]
A
[
C
I
200
160
120
80
40
0
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
0,0
0,5
1,0
1,5
2,0
2,5
VCE [V]
3,0
3,5
4,0
4,5
5,0
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=2.4W
,RGoff=2.4W
,VCE=600V
400
360
320
280
240
]
A
[
C
I
200
160
120
80
40
0
5
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
6
7
8
9
VGE [V]
10
11
12
13
]
J
m
[
E
50
45
40
35
30
25
20
15
10
5
0
preparedby:MK
approvedby:WR
dateofpublication:2013-11-04
revision:2.0
4
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
0
50
100
150
200
IC [A]
250
300
350
400
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF200R12KT4
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
初步数据
PreliminaryData
瞬态热阻抗IGBT,逆变器
transientthermalimpedanceIGBT,Inverter
ZthJC=f(t)
1
ZthJC : IGBT
0,1
]
W
K
/
[
C
J
h
Z
t
0,01
0
2
4
6
8
10 12 14 16 18 20 22 24
0,001
0,001
0,01
i:
ri[K/W]:
i[s]:
1
0,0081
0,01
2
0,04455
0,02
3
0,0432
0,05
4
0,03915
0,1
0,1
t [s]
1
10
100
90
80
70
60
50
40
30
20
10
0
反偏安全工作区IGBT,逆变器(RBSOA)
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=2.4W
,Tvj=150°C
正向偏压特性二极管,逆变器(典型)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
IC, Modul
IC, Chip
450
400
350
300
250
200
150
100
50
]
A
[
C
I
0
0
200
400
400
360
320
280
240
]
A
[
F
I
200
160
120
80
40
0
1000
1200
1400
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4
VF [V]
600
800
VCE [V]
preparedby:MK
approvedby:WR
dateofpublication:2013-11-04
revision:2.0
5
t
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF200R12KT4
初步数据
PreliminaryData
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=200A,VCE=600V
Erec, Tvj = 125°C
Erec, Tvj = 150°C
0
2
4
6
8
10 12 14 16 18 20 22 24
RG [W
]
24
20
16
12
8
4
0
Erec, Tvj = 125°C
Erec, Tvj = 150°C
0
50
100
150
200
250
300
350
400
]
J
m
[
E
22
20
18
16
14
12
10
8
6
4
2
0
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
ZthJC=f(t)
ZthJC : Diode
1
0,1
]
W
K
/
[
C
J
h
Z
t
0,01
i:
ri[K/W]:
i[s]:
1
0,012
0,01
2
0,066
0,02
3
0,064
0,05
4
0,058
0,1
0,001
0,001
0,01
0,1
t [s]
1
10
preparedby:MK
approvedby:WR
dateofpublication:2013-11-04
revision:2.0
6
t
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
封装尺寸/packageoutlines
FF200R12KT4
初步数据
PreliminaryData
preparedby:MK
approvedby:WR
dateofpublication:2013-11-04
revision:2.0
7
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FF200R12KT4
Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill
havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch
application.
Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.Anysuchwarrantyisgranted
exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits
characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered.
Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof
ourproduct,pleasecontactthesalesoffice,whichisresponsibleforyou(seewww.infineon.com).Forthosethatarespecifically
interestedwemayprovideapplicationnotes.
Duetotechnicalrequirementsourproductmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactthe
salesoffice,whichisresponsibleforyou.
ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please
note,thatforanysuchapplicationsweurgentlyrecommend
-toperformjointRiskandQualityAssessments;
-theconclusionofQualityAgreements;
-toestablishjointmeasuresofanongoingproductsurvey,andthatwemaymakedeliverydependedon
therealizationofanysuchmeasures.
Ifandtotheextentnecessary,pleaseforwardequivalentnoticestoyourcustomers.
Changesofthisproductdatasheetarereserved.
初步数据
PreliminaryData
preparedby:MK
approvedby:WR
dateofpublication:2013-11-04
revision:2.0
8