高速放大芯片资料.pdf-资料库

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA2771 MMIC wideband amplifier Product speciﬁcation Supersedes data of 2001 Oct 19 2002 Aug 06

Philips Semiconductors MMIC wideband ampliﬁer FEATURES • Internally matched • Wide frequency range • Very flat gain • High output power • High linearity • Unconditionally stable. APPLICATIONS • Cable systems • LNB IF amplifiers • General purpose • ISM. DESCRIPTION Product speciﬁcation BGA2771 DESCRIPTION PINNING PIN 1 2, 5 3 4 6 VS GND2 RF out GND1 RF in 6 5 4 1 6 3 1 2 3 4 2, 5 Top view MAM455 Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. Marking code: G4-. Fig.1 Simplified outline (SOT363) and symbol. QUICK REFERENCE DATA SYMBOL VS IS s21 2 NF PL(sat) PARAMETER CONDITIONS TYP. MAX. UNIT DC supply voltage DC supply current insertion power gain noise ﬁgure saturated load power f = 1 GHz f = 1 GHz f = 1 GHz CAUTION 4 3 33.3 21.4 4.5 13.2 V mA dB dB dBm This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2002 Aug 06 2 - - - -

Philips Semiconductors MMIC wideband ampliﬁer Product speciﬁcation BGA2771 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VS IS Ptot Tstg Tj PD PARAMETER CONDITIONS MIN. MAX. UNIT DC supply voltage supply current total power dissipation storage temperature operating junction temperature maximum drive power RF input AC coupled Ts £ 80 C - 65 4 50 200 +150 150 10 V mA mW C C dBm THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to solder point CONDITIONS Ptot = 200 mW; Ts £ 80 C VALUE 300 UNIT K/W CHARACTERISTICS VS = 3 V; IS = 33 mA; f = 1 GHz; Tj = 25 C; unless otherwise speciﬁed. SYMBOL IS s21 2 PARAMETER supply current insertion power gain RL IN return losses input RL OUT return losses output NF noise ﬁgure BW PL(sat) bandwidth saturated load power PL 1 dB load power IP3(in) input intercept point IP3(out) output intercept point CONDITIONS MIN. TYP. 29 f = 1 GHz f = 2 GHz f = 1 GHz f = 2 GHz f = 1 GHz f = 2 GHz f = 1 GHz f = 2 GHz at s21 2 - 3 dB below ﬂat gain at 1 GHz - f = 1 GHz f = 2 GHz at 1 dB gain compression; f = 1 GHz at 1 dB gain compression; f = 2 GHz f = 1 GHz f = 2 GHz f = 1 GHz f = 2 GHz 33.3 21.4 20.8 17 13 9 9 4.5 4.7 2.4 13.2 10.5 12.1 8.4 0.5 - 4.3 21.9 16.5 MAX. 45 UNIT mA dB dB dB dB dB dB dB dB GHz dBm dBm dBm dBm dBm dBm dBm dBm 2002 Aug 06 3 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -

Philips Semiconductors MMIC wideband ampliﬁer APPLICATION INFORMATION Figure 2 shows a typical application circuit for the BGA2771 MMIC. The device is internally matched to 50 W and therefore does not need any external matching. The value of the input and output DC blocking capacitors C2 and C3 should be not more than 100 pF for applications above 100 MHz. However, when the device is operated below 100 MHz, the capacitor value should be increased. , The nominal value of the RF choke L1 is 100 nH. At frequencies below 100 MHz this value should be increased to 220 nH. At frequencies above 1 GHz a much lower value must be used (e.g. 10 nH) to improve return losses. For optimal results, a good quality chip inductor such as the TDK MLG 1608 (0603), or a wire-wound SMD type should be chosen. Both the RF choke L1 and the 22 nF supply decoupling capacitor C1 should be located as closely as possible to the MMIC. Separate paths must be used for the ground planes of the ground pins GND1 and GND2, and these paths must be as short as possible. When using vias, use multiple vias per pin in order to limit ground path inductance. handbook, halfpage Vs C1 C2 RF input Vs RF in RF out L1 C3 RF output GND1 GND2 MGU436 Fig.2 Typical application circuit. Figure 3 shows two cascaded MMICs. This configuration doubles overall gain while preserving broadband characteristics. Supply decoupling and grounding conditions for each MMIC are the same as those for the circuit of Fig.2. The excellent wideband characteristics of the MMIC make it and ideal building block in IF amplifier applications such as LBNs (see Fig.4). As a buffer amplifier between an LNA and a mixer in a receiver circuit, the MMIC offers an easy matching, low noise solution (see Fig.5). 2002 Aug 06 4 Product speciﬁcation BGA2771 In Fig.6 the MMIC is used as a driver to the power amplifier as part of a transmitter circuit. Good linear performance and matched input and output offer quick design solutions in such applications. handbook, halfpage DC-block 100 pF DC-block 100 pF DC-block 100 pF input output MGU437 Fig.3 Simple cascade circuit. handbook, halfpage from RF circuit mixer to IF circuit or demodulator wideband amplifier MGU438 oscillator Fig.4 IF amplifier application. handbook, halfpage antenna mixer to IF circuit or demodulator MGU439 LNA wideband amplifier oscillator Fig.5 RF amplifier application. handbook, halfpage from modulation or IF circuit mixer oscillator to power amplifier MGU440 wideband amplifier Fig.6 Power amplifier driver application.

Philips Semiconductors MMIC wideband ampliﬁer Product speciﬁcation BGA2771 handbook, full pagewidth 90 +1 135 +0.5 45 +2 180 0 +0.2 - 0.2 0.2 0.5 3 GHz 100 MHz 2 1 5 1.0 0.8 0.6 0.4 0.2 0 +5 - 5 0 - 0.5 - 135 - 2 - 45 - 1 - 90 MGU457 1.0 IS = 33.4 mA; VS = 3 V; PD = - 30 dBm; ZO = 50 W. Fig.7 Input reflection coefficient (s11); typical values. handbook, full pagewidth 90 +1 135 +0.5 45 +2 +0.2 3 GHz 100 MHz 180 0 0.2 1 2 5 1.0 0.8 0.6 0.4 0.2 0 +5 - 5 0 - 0.2 - 0.5 - 135 - 2 - 45 MGU458 1.0 - 1 - 90 IS = 33.4 mA; VS = 3 V; PD = - 30 dBm; ZO = 50 W. Fig.8 Output reflection coefficient (s22); typical values. 2002 Aug 06 5

Philips Semiconductors MMIC wideband ampliﬁer Product speciﬁcation BGA2771 handbook, halfpage 0 MGU459 handbook, halfpage 30 MGU460 2 s12 (dB) - 20 - 40 - 60 0 1000 2000 3000 f (MHz) 2 s21 (dB) 20 10 0 0 1000 2000 3000 f (MHz) IS = 33.4 mA; VS = 3 V; PD = - 30 dBm; ZO = 50 W. IS = 33.4 mA; VS = 3 V; PD = - 30 dBm; ZO = 50 W. Fig.9 Isolation ( s12 2) as a function of frequency; typical values. Fig.10 Insertion gain ( s21 2) as a function of frequency; typical values. handbook, halfpage 20 MGU461 handbook, halfpage 20 MGU462 PL (dBm) 10 0 - 10 PL (dBm) 10 0 - 10 - 20 - 40 - 30 - 20 - 10 0 PD (dBm) - 20 - 40 - 30 - 20 - 10 0 PD (dBm) VS = 3 V; f = 1 GHz; ZO = 50 W. VS = 3 V; f = 2 GHz; ZO = 50 W. Fig.11 Load power as a function of drive power at Fig.12 Load power as a function of drive power at 1 GHz; typical values. 2 GHz; typical values. 2002 Aug 06 6

Philips Semiconductors MMIC wideband ampliﬁer Product speciﬁcation BGA2771 handbook, halfpage 10 NF (dB) 8 6 4 2 0 0 MGU463 handbook, halfpage 5 MGU464 K 4 3 2 1 0 0 1000 2000 f (MHz) 3000 1000 2000 f (MHz) 3000 IS = 33.4 mA; VS = 3 V; ZO = 50 W. IS = 33.4 mA; VS = 3 V; ZO = 50 W. Fig.13 Noise figure as a function of frequency; Fig.14 Stability factor as a function of frequency; typical values. typical values. Scattering parameters IS = 33.4 mA; VS = 3 V; PD = - 30 dBm; ZO = 50 W ; Tamb = 25 C. s21 MAGNITUDE f (MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 s11 MAGNITUDE (ratio) 0.09328 0.09722 0.10224 0.10707 0.12009 0.13693 0.15676 0.17873 0.20322 0.21560 0.20901 0.18846 0.14965 0.11394 0.11394 0.13292 ANGLE (deg) 62.11 25.33 5.155 - 1.282 - 0.985 1.692 3.594 4.299 3.166 0.032 - 2.617 - 5.529 - 1.870 11.81 36.35 50.28 s12 MAGNITUDE (ratio) 0.02953 0.02687 0.02437 0.02288 0.02176 0.02174 0.02229 0.02341 0.02492 0.02645 0.02676 0.02653 0.02605 0.02388 0.02139 0.01987 ANGLE (deg) 13.71 6.556 0.870 1.273 3.809 8.643 11.84 13.89 15.56 13.77 11.10 9.411 6.749 3.622 6.039 12.49 s22 MAGNITUDE (ratio) 0.50404 0.35904 0.31417 0.32541 0.34755 0.36785 0.37169 0.36720 0.35425 0.33802 0.32517 0.32259 0.33529 0.37019 0.39826 0.44613 ANGLE (deg) 29.78 16.09 - 10.34 - 29.56 - 44.52 - 56.69 - 68.24 - 79.76 - 92.62 - 107.7 - 125.3 - 145.1 - 164.4 178.5 165.2 156.5 ANGLE (deg) 25.98 5.910 - 13.69 - 27.51 - 40.46 - 53.00 - 65.95 - 79.54 - 93.52 - 108.7 - 124.7 - 140.3 - 156.2 - 169.3 - 178.5 174.2 (ratio) 10.336 11.266 11.693 11.806 11.851 11.931 11.990 12.036 11.953 11.755 11.224 10.499 9.2991 7.8388 6.7932 5.9348 2002 Aug 06 7

Philips Semiconductors MMIC wideband ampliﬁer PACKAGE OUTLINE Plastic surface mounted package; 6 leads Product speciﬁcation BGA2771 SOT363 D B E A X y 6 1 5 4 pin 1 index 2 bp e1 e w BM 3 0 HE v M A A A1 Q c Lp detail X 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.30 0.20 c 0.25 0.10 D 2.2 1.8 E e e1 1.35 1.15 1.3 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q v w y 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 2002 Aug 06 REFERENCES IEC JEDEC EIAJ SC-88 8 EUROPEAN PROJECTION ISSUE DATE 97-02-28

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