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Computational Lithography 计算光刻
Computational Lithography
Contents
Preface
Acknowledgments
Acronyms
1 Introduction
1.1 OPTICAL LITHOGRAPHY
1.1.1 Optical Lithography and Integrated Circuits
1.1.2 Brief History of Optical Lithography Systems
1.2 RAYLEIGH’S RESOLUTION
1.3 RESIST PROCESSES AND CHARACTERISTICS
1.4 TECHNIQUES IN COMPUTATIONAL LITHOGRAPHY
1.4.1 Optical Proximity Correction
1.4.2 Phase-Shifting Masks
1.4.3 Off-Axis Illumination
1.4.4 Second-Generation RETs
1.5 OUTLINE
2 Optical Lithography Systems
2.1 PARTIALLY COHERENT IMAGING SYSTEMS
2.1.1 Abbe’s Model
2.1.2 Hopkins Diffraction Model
2.1.3 Coherent and Incoherent Imaging Systems
2.2 APPROXIMATION MODELS
2.2.1 Fourier Series Expansion Model
2.2.2 Singular Value Decomposition Model
2.2.3 Average Coherent Approximation Model
2.2.4 Discussion and Comparison
2.3 SUMMARY
3 Rule-Based Resolution Enhancement Techniques
3.1 RET TYPES
3.1.1 Rule-Based RETs
3.1.2 Model-Based RETs
3.1.3 Hybrid RETs
3.2 RULE-BASED OPC
3.2.1 Catastrophic OPC
3.2.2 One-Dimensional OPC
3.2.3 Line-Shortening Reduction OPC
3.2.4 Two-Dimensional OPC
3.3 RULE-BASED PSM
3.3.1 Dark-Field Application
3.3.2 Light-Field Application
3.4 RULE-BASED OAI
3.5 SUMMARY
4 Fundamentals of Optimization
4.1 DEFINITION AND CLASSIFICATION
4.1.1 Definitions in the Optimization Problem
4.1.2 Classification of Optimization Problems
4.2 UNCONSTRAINED OPTIMIZATION
4.2.1 Solution of Unconstrained Optimization Problem
4.2.2 Unconstrained Optimization Algorithms
4.3 SUMMARY
5 Computational Lithography with Coherent Illumination
5.1 PROBLEM FORMULATION
5.2 OPC OPTIMIZATION
5.2.1 OPC Design Algorithm
5.2.2 Simulations
5.3 TWO-PHASE PSM OPTIMIZATION
5.3.1 Two-Phase PSM Design Algorithm
5.3.2 Simulations
5.4 GENERALIZED PSM OPTIMIZATION
5.4.1 Generalized PSM Design Algorithm
5.4.2 Simulations
5.5 RESIST MODELING EFFECTS
5.6 SUMMARY
6 Regularization Framework
6.1 DISCRETIZATION PENALTY
6.1.1 Discretization Penalty for OPC Optimization
6.1.2 Discretization Penalty for Two-Phase PSM Optimization
6.1.3 Discretization Penalty for Generalized PSM Optimization
6.2 COMPLEXITY PENALTY
6.2.1 Total Variation Penalty
6.2.2 Global Wavelet Penalty
6.2.3 Localized Wavelet Penalty
6.3 SUMMARY
7 Computational Lithography with Partially Coherent Illumination
7.1 OPC OPTIMIZATION
7.1.1 OPC Design Algorithm Using the Fourier Series Expansion Model
7.1.2 Simulations Using the Fourier Series Expansion Model
7.1.3 OPC Design Algorithm Using the Average Coherent Approximation Model
7.1.4 Simulations Using the Average Coherent Approximation Model
7.1.5 Discussion and Comparison
7.2 PSM OPTIMIZATION
7.2.1 PSM Design Algorithm Using the Singular Value Decomposition Model
7.2.2 Discretization Regularization for PSM Design Algorithm
7.2.3 Simulations
7.3 SUMMARY
8 Other RET Optimization Techniques
8.1 DOUBLE-PATTERNING METHOD
8.2 POST-PROCESSING BASED ON 2D DCT
8.3 PHOTORESIST TONE REVERSING METHOD
8.4 SUMMARY
9 Source and Mask Optimization
9.1 LITHOGRAPHY PRELIMINARIES
9.2 TOPOLOGICAL CONSTRAINT
9.3 SOURCE–MASK OPTIMIZATION ALGORITHM
9.4 SIMULATIONS
9.5 SUMMARY
10 Coherent Thick-Mask Optimization
10.1 KIRCHHOFF BOUNDARY CONDITIONS
10.2 BOUNDARY LAYER MODEL
10.2.1 Boundary Layer Model in Coherent Imaging Systems
10.2.2 Boundary Layer Model in Partially Coherent Imaging Systems
10.3 LITHOGRAPHY PRELIMINARIES
10.4 OPC OPTIMIZATION
10.4.1 Topological Constraint
10.4.2 OPC Optimization Algorithm Based on BL Model Under Coherent Illumination
10.4.3 Simulations
10.5 PSM OPTIMIZATION
10.5.1 Topological Constraint
10.5.2 PSM Optimization Algorithm Based on BL Model Under Coherent Illumination
10.5.3 Simulations
10.6 SUMMARY
11 Conclusions and New Directions of Computational Lithography
11.1 CONCLUSION
11.2 NEW DIRECTIONS OF COMPUTATIONAL LITHOGRAPHY
11.2.1 OPC Optimization for the Next-Generation Lithography Technologies
11.2.2 Initialization Approach for the Inverse Lithography Optimization
11.2.3 Double Patterning and Double Exposure Methods in Partially Coherent Imaging System
11.2.4 OPC and PSM Optimizations for Inverse Lithography Based on Rigorous Mask Models in Partially Coherent Imaging System
11.2.5 Simultaneous Source and Mask Optimization for Inverse Lithography Based on Rigorous Mask Models
11.2.6 Investigation of Factors Influencing the Complexity of the OPC and PSM Optimization Algorithms
Appendix A: Formula Derivation in Chapter 5
Appendix B: Manhattan Geometry
Appendix C: Formula Derivation in Chapter 6
Appendix D: Formula Derivation in Chapter 7
Appendix E: Formula Derivation in Chapter 8
Appendix F: Formula Derivation in Chapter 9
Appendix G: Formula Derivation in Chapter 10
Appendix H: Software Guide
References
Index