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5G射频功放的技术趋势及测试.pdf

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Keysight Technologies JULY 23, 2018 王文斌 wenbin.wang@keysight.com
➢ 5G时代PA的技术趋势 ➢ PA射频特性测试 ➢ PA系统级指标测试 ➢ PA自动化验证 2
B R O A D R A N G E O F N E W S E R V I C E S A N D C O N N E C T I V I T Y P A R A D I G M S Courtesy of METIS: 2014 Enhanced Mobile Broadband (eMBB) Ultra Reliability and Low Latency (URLLC) Massive Machine Communication (mMTC) • All data, all the time • 2 billion people on social media • Ultra high-reliability • 30 billion “things” connected • Ultra-low latency • Low cost, low energy 3GPP Rel-15 coverage 3
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• • The BF module not only integrates the active antenna array to realize beamforming, but also enables frequency conversion for both uplink and downlink converting the mmWave frequency to the IF frequency directly and immediately on a BF module minimizes the front-end insertion loss z H G 6 - b u s Application Processor (AP) BaseBand IC (BB-IC) w m m Application Processor (AP) BB & RFIC IQ IF RF Transceiver (RF-IC) PA/FEM Phased-array Transceiver IC • From IEEE Document 5G Cellular User Equipment: From Theory to Practical Hardware Design 19 Jul2017 5
Industry Challenge W I D E B A N D W I D T H S F O R H I G H D A T A T H R O U G H P U T  C R E A T E S N E W I S S U E S 5G Industry Drivers Move to cm & mmWave for more bandwidth Massive growth in demand for mobile data 100 GHz emerging 5G research Up to 5 GHz BW for 5G signals 0 10 20 30 40 50 60 70 80 90 100 GHz Design and measurement challenges Challenging very wideband mmWave measurements • Phase noise, IQ & freq response errors worse at mmW • Wide bandwidth means more noise, more spurs, worse EVM 6
Base Station Handset IoT Device 各种半导体技术都将有一席之地 Application /Technology GaAs HBT GaAs HEMT InP HBT GaN HEMT ☺ SiGe(BiCMOS) CMOS,Si SOI Sub- 6GHz mmW Sub- 6GHz ☺ ☺ ☺ mmW ☺ ☺ Sub- 6GHz ☺ ☺ mmW ☺ ☺ ▪ 基站:高压&性能驱动,高 Vdd —— GaN HEMT ▪ 终端:效率驱动——HBT&HEMT ▪ 物联网:成本——SiGe & CMOS 7
• 多制式、多功能——测试项目繁复 • 应用速度(研发到交付)——研发与产测结果一致性验证 • 单元电路间的协同——基本指标与系统级指标同时关注 We’re here 更好的性能 ET/DPD, Noise Figure 一体化的设计 测试项目更加复杂 更多的频段 10倍以上的测试项目 宽带应用 mmW和宽带测试带来的挑战 更高的集成度 在片测试 先进的封装 OTA测试 基本参数测试 EVM, Channel power, ACP, IM3, Harmonics, Gain, Isolations, Matching, etc. 8
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