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XM8A51216V33(8M)(芯片资料).pdf

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Features
Selection Guide
Functional Description
Logic Block Diagram
Pin Configurations
Pin Definitions
Truth Table
Maximum Ratings
Operating Range
Electrical Characteristics
Capacitance
Thermal Resistance
AC Test Loads and Waveforms
Switching Characteristics
Switching Waveforms
Switching Waveforms (continued)
Ordering Code Definitions
Package Diagrams
Acronyms
Document Conventions
Document Revision History
XM8A01M08V33A XM8A51216V33A January 2019 Selection Guide Description Maximum access time Maximum operating current Maximum CMOS standby current Spec Unit 10/12 ns 75 35 mA mA 8 Mbit (512K×16/1Mx8) Asynchronous XRAM Features  Asynchronous XRAM Memory  High speed access time  tAA = 10/12 ns  Low active power  ICC = 55 mA at 80 MHz  Low CMOS standby current  ISB2 = 20 mA (Typ)  Operating voltage range: 2.2 V to 3.6 V  Automatic power-down when deselected  TTL-compatible inputs and outputs  Available in 44-pin TSOP II, 48-pin TSOP I package and 48-ball FBGA package Functional Description The XRAM is a new memory architecture designed to provide high-density and high-performance RAM at competitive price. The XRAM uses advanced DRAM technology and self-refresh architecture to significantly improve the memory density, performance and also simplify the user interface. The XM8A51216V33A/XM8A01M08V33A XRAM, which is functionally equivalent to asynchronous SRAM, is a high-performance, 8Mbits CMOS memory organized as 512K words by 16 bits and 1024K words by 8bits that supports an asynchronous SRAM memory interface. To write to the device, take Chip Enables (CE) and Write Enable (WE) input LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (DQ0 through DQ7), is written into the location specified on the address pins (A0 through A18). If Byte High Enable (BHE) is LOW, then data from I/O pins (DQ8 through DQ15) is written into the location specified on the address pins (A0 through A18). To read from the device, take Chip Enables (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins appears on DQ0 to DQ7. If Byte High Enable (BHE) is LOW, then data from memory appears on DQ8 to DQ15. See the Truth Table on page 8 for a complete description of Read and Write modes. The input or output pins (DQ0 through DQ15) are placed in a high impedance state when the device is deselected (CE), the outputs are disabled (OE HIGH), the BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE and WE LOW). A burst mode pin (MODE) defines the order of the burst sequence. When tied HIGH, the interleaved burst sequence is selected. When tied LOW, the linear burst sequence is selected. Note: Descriptions about BLE and BHE do not apply to XM8A01M08V33A XRAM. *Products and specifications discussed herein are subject to change by XingMem without notice. XingMem Technology Corporation Floor 11, Guoren Building, Nanshan District, Shenzhen, China +86-755-8633-6223 www.xingmem.com Document Number: 002-00008 Rev. A2 Revised Jan, 2019
Logic Block Diagram XM8A01M08V33A XM8A51216V33A Figure 1 Logic Block Diagram - XM8A51216V33A Figure 2 Logic Block Diagram - XM8A01M08V33A Document Number: 002-00008 Rev. A2 Page 2 of 25 1M x 8Memory ArrayDecoderI/OCircuitA0-A19CEnOEnDQ0-DQ7VDDWEnControlCircuitColumn I/OVss512K x 16Memory ArrayDecoderI/OCircuitA0-A18CEnOEnWEnBLEnDQ0-DQ15VDDBHEnControlCircuitColumn I/OVss
Contents Features .................................................................. 1 Selection Guide ...................................................... 1 Functional Description .......................................... 1 Logic Block Diagram .............................................. 2 Pin Configurations ................................................. 4 Pin Definitions ......................................................... 8 Truth Table ............................................................... 8 Maximum Ratings ................................................... 9 Operating Range .................................................... 9 Electrical Characteristics ..................................... 10 Capacitance .......................................................... 11 XM8A01M08V33A XM8A51216V33A Thermal Resistance .............................................. 11 AC Test Loads and Waveforms ............................ 12 Switching Characteristics .................................... 13 Switching Waveforms ........................................... 14 Switching Waveforms (continued) ...................... 15 Ordering Information ............................................ 17 Ordering Code Definitions ................................... 19 Package Diagrams ................................................ 20 Acronyms .............................................................. 23 Document Conventions ........................................ 24 Document Revision History ................................. 25 Document Number: 002-00008 Rev. A2 Page 3 of 25
Pin Configurations XM8A01M08V33A XM8A51216V33A Figure 3 XM8A01M08V33A (1M × 8) 44-pin TSOP II pinout Figure 4 XM8A51216V33A (512K × 16) 44-pin TSOP II pinout Document Number: 002-00008 Rev. A2 Page 4 of 25 1324657981012111315141618171921202244424341394038363735333432303129272826242523NCNCA0A1A2A3A4CSnDQ0DQ1VDDVSSDQ2DQ3WEnA5A6A7A8A9NCNCNCNCNCA18A17A16A15OEnDQ7DQ6VSSVDDDQ5DQ4A14A13A12A11A10A19NCNC1324657981012111315141618171921202244424341394038363735333432303129272826242523A0A1A2A3A4CEnDQ0DQ1DQ2DQ3VDDVSSDQ4DQ5DQ6DQ7WEnA5A6A7A8A9A17A16A15OEnBHEnBLEnDQ15DQ14DQ13DQ12VSSVDDDQ11DQ10DQ9DQ8A18A14A13A12A11A10
XM8A01M08V33A XM8A51216V33A Figure 5 XM8A51216V33A (512K × 16) 48-pin TSOP I pinout Document Number: 002-00008 Rev. A2 Page 5 of 25 132465798101211131514161817192120222423484647454344424041393738363435333132302829272526A0A1A2A3A4NCCEnDQ0DQ1DQ2DQ3VDDVSSDQ4DQ5DQ6DQ7WEnNCA5A6A7A8A9A17A16A15NCOEnBHEnBLEnDQ15DQ14DQ13DQ12VSSVDDDQ11DQ10DQ9DQ8NCA18A14A13A12A11A10
XM8A01M08V33A XM8A51216V33A Figure 6 XM8A01M08V33A (1M × 8) 48-Ball FBGA Single Chip Enable Package Code: BG Figure 7 XM8A51216V33A (512 × 16) 48-Ball FBGA Single Chip Enable Package Code: BG Document Number: 002-00008 Rev. A2 Page 6 of 25 ACBDEFGH123456NCOEnA0A1A2NCA3A4A6A5A17A7A16A14A15A12A13A9A10A8A18NCA11NCCEnWEnVSSVDDVDDVSSA19DQ0DQ1DQ2DQ3DQ4DQ5DQ6DQ7NCNCNCNCNCNCNCNCNCACBDEFGH123456BLEnOEnA0A1A2NCA3A4A6A5A17A7A16A14A15A12A13A9A10A8A18NCA11BHEnCEnWEnVSSVDDVDDVSSNCDQ0DQ1DQ2DQ3DQ4DQ5DQ6DQ7DQ8DQ9DQ10DQ11DQ12NCDQ13DQ14DQ15
XM8A01M08V33A XM8A51216V33A Figure 8 XM8A01M08V33A (1M × 8) 48-Ball FBGA Single Chip Enable Package Code: B2 Figure 9 XM8A51216V33A (512 × 16) 48-Ball FBGA Single Chip Enable Package Code: B2 Document Number: 002-00008 Rev. A2 Page 7 of 25 ACBDEFGH123456NCOEnA0A1A2CE2A3A4A6A5A17A7A16A14A15A12A13A9A10A8A18NCA11NCCE1nWEnVSSVDDVDDVSSA19DQ0DQ1DQ2DQ3DQ4DQ5DQ6DQ7NCNCNCNCNCNCNCNCNCACBDEFGH123456BLEnOEnA0A1A2CE2A3A4A6A5A17A7A16A14A15A12A13A9A10A8A18NCA11BHEnCE1nWEnVSSVDDVDDVSSNCDQ0DQ1DQ2DQ3DQ4DQ5DQ6DQ7DQ8DQ9DQ10DQ11DQ12NCDQ13DQ14DQ15
XM8A01M08V33A XM8A51216V33A Pin Definitions Name VDD VSS BLEn, BHEn A0-A19 CEn, CE1n, CE2 OEn WEn DQ0-DQ15 I/O Supply Supply Input Input Input Input Input I/O Description Power. Ground. Byte write enable signal, active LOW. Address inputs. Chip enable signal, active LOW. Output enable signal, active LOW. Write enable signal, active LOW. Data inputs/outputs. Note: For all dual chip enable device, CEn represents the logical combination of CE1n and CE2. When CEn is LOW, CE1n is LOW, CE2 is HIGH. When CEn is HIGH, CE1n is LOW or CE2 is HIGH. Truth Table The Truth Table for parts XM8A01M08V33A/XM8A51216V33A is as follows*. Mode WEn BLEn BHEn CEn OEn DQ0-DQ7 DQ8-DQ15 Not Selected Output Disabled Read Read Read Write Write Write X H H H H L L L X X L L H L L H X X L H L L H L H L L L L L L L X H L L L H H H High-Z High-Z High-Z High-Z Data Out Data Out High-Z Data Out Data Out Data In Data In High-Z High-Z Data In High-Z Data In Note: Descriptions about BLEn and BHEn do not apply to XM8A01M08V33A XRAM. Document Number: 002-00008 Rev. A2 Page 8 of 25
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