第1页 / 共9页
第2页 / 共9页
第3页 / 共9页
第4页 / 共9页
第5页 / 共9页
第6页 / 共9页
第7页 / 共9页
第8页 / 共9页
irf3205(智能车电机驱动).pdf
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
G
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current Q
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche CurrentQ
Repetitive Avalanche EnergyQ
Peak Diode Recovery dv/dt S
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
RθJC
RθCS
RθJA
www.irf.com
PD-91279E
IRF3205
HEXFET® Power MOSFET
D
S
VDSS = 55V
RDS(on) = 8.0mΩ
ID = 110AU
TO-220AB
Max.
110 U
80
390
200
1.3
± 20
62
20
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf in (1.1N m)
Typ.
–––
0.50
–––
Max.
0.75
–––
62
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Units
°C/W
1
01/25/01
IRF3205
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
V(BR)DSS
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
RDS(on)
Gate Threshold Voltage
VGS(th)
gfs
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
LS
Ciss
Coss
Crss
EAS
µA
nA
nC
ns
–––
–––
V
Conditions
VGS = 0V, ID = 250µA
mΩ VGS = 10V, ID = 62AT
V
S
Min. Typ. Max. Units
55
––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA
–––
2.0
44
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
8.0
–––
4.0
–––
–––
–––
25
–––
250
–––
–––
100
––– -100
–––
146
35
–––
54
–––
–––
14
101
–––
–––
50
65
–––
VDS = VGS, ID = 250µA
VDS = 25V, ID = 62AT
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 62A
VDS = 44V
VGS = 10V, See Fig. 6 and 13
VDD = 28V
ID = 62A
RG = 4.5Ω
VGS = 10V, See Fig. 10 T
Between lead,
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
IAS = 62A, L = 138µH
G
D
S
Internal Drain Inductance
–––
4.5
–––
nH
Internal Source Inductance
–––
7.5
–––
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche EnergyR
3247 –––
–––
781
211
–––
–––
–––
pF
–––
––– 1050V 264W mJ
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
ISM
VSD
trr
Qrr
ton
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)Q
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Notes:
Q Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
R Starting TJ = 25°C, L = 138µH
RG = 25Ω, IAS = 62A. (See Figure 12)
S ISD ≤ 62A, di/dt ≤ 207A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
–––
–––
110
–––
–––
390
–––
–––
–––
–––
69
143
1.3
104
215
A
V
ns
nC
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 62A, VGS = 0V T
TJ = 25°C, IF = 62A
di/dt = 100A/µs T
G
D
S
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
T Pulse width ≤ 400µs; duty cycle ≤ 2%.
U Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
V This is a typical value at device destruction and represents
operation outside rated limits.
WThis is a calculated value limited to TJ = 175°C.
2
www.irf.com
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
TOP
)
A
(
t
BOTTOM
100
n
e
r
r
u
C
e
c
r
u
o
S
10
-
o
i
t
-
n
a
r
D
,
I
D
1
0.1
4.5V
20µs PULSE WIDTH
T = 25 C
J
°
1
10
100
V , Drain-to-Source Voltage (V)
DS
1000
TOP
)
A
(
t
BOTTOM
100
n
e
r
r
u
C
e
c
r
u
o
S
10
-
o
i
t
-
n
a
r
D
,
I
D
1
0.1
IRF3205
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
20µs PULSE WIDTH
T = 175 C
J
°
1
10
100
V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
)
A
(
t
100
n
e
r
r
u
C
e
c
r
u
o
S
10
-
o
t
-
n
a
r
i
D
,
I
D
1
4
T = 25 C
°
J
T = 175 C
°
J
e
c
n
a
i
t
s
s
e
R
n
O
e
c
r
u
o
S
-
o
i
t
-
n
a
r
D
)
d
e
z
i
l
a
m
r
o
N
(
DS
V = 25V
20µs PULSE WIDTH
8
10
12
)
n
o
(
,
S
D
R
I =
D
107A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
6
GS
V , Gate-to-Source Voltage (V)
V
GS
=
10V
20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
°
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRF3205
6000
5000
4000
3000
2000
1000
)
F
p
(
e
c
n
a
t
i
c
a
p
a
C
,
C
0
1
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
100
VDS, Drain-to-Source Voltage (V)
)
V
(
e
g
a
t
l
o
V
e
c
r
u
o
S
-
o
t
-
e
t
a
G
,
S
G
V
16
14
12
10
8
6
4
2
0
0
I =D 62A
V
V
V
= 44V
= 27V
= 11V
DS
DS
DS
20
40
100
Q , Total Gate Charge (nC)
60
80
G
120
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
T = 175 C
°
J
10000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
1000
)
A
(
t
100
1000
)
)
A
A
(
(
t
t
n
n
e
e
r
r
r
r
u
u
C
C
n
n
a
a
r
r
i
i
100
D
D
,
,
I
I
D
10
= 25 C°
T
C
°
T
= 175 C
J
Single Pulse
1
1
10us
100us
1ms
10ms
10
100
1000
V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
www.irf.com
i
n
e
r
r
u
C
n
a
r
D
e
s
r
e
v
e
R
,
I
D
S
10
1
0.1
0.2
T = 25 C
°
J
V = 0 V
GS
0.8
1.4
2.0
2.6
V ,Source-to-Drain Voltage (V)
SD
Fig 7. Typical Source-Drain Diode
Fig 7. Typical Source-Drain Diode
Forward Voltage
Forward Voltage
4
120
100
)
A
(
t
n
e
r
r
u
C
n
a
r
D
i
,
I
D
80
60
40
20
0
25
LIMITED BY PACKAGE
50
75
150
T , Case Temperature ( C)
C
100
125
°
IRF3205
RD
D.U.T.
D.U.T.
+
VDD
-
VDS
VDS
VGS
VGS
RG
RG
10V
10V
Pulse Width ≤ 1 µs
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
Fig 10a. Switching Time Test Circuit
VDS
VDS
90%
90%
10%
10%
VGS
VGS
175
Fig 9. Maximum Drain Current Vs.
Fig 9. Maximum Drain Current Vs.
Case Temperature
Case Temperature
td(on)
td(on)
tr
tr
td(off)
td(off)
tf
tf
Fig 10b. Switching Time Waveforms
Fig 10b. Switching Time Waveforms
1
0.1
)
C
J
h
t
Z
(
e
s
n
o
p
s
e
R
l
a
m
r
e
h
T
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
P
DM
2
Notes:
1. Duty factor D = t / t
1
x Z
2. Peak T = P
DM
J
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
TOP
BOTTOM
ID
25A
44A
62A
100
125
150
175
75
J
IRF3205
15V
500
)
J
m
V D S
L
D R IV E R
R G
20V
D .U .T
IA S
tp
0.01Ω
+
- VD D
A
Fig 12a. Unclamped Inductive Test Circuit
l
(
y
g
r
e
n
E
e
h
c
n
a
a
v
A
e
s
u
P
e
g
n
S
l
l
i
400
300
200
100
V (B R )D S S
tp
,
S
A
E
0
25
50
Starting T , Junction Temperature ( C)
°
I A S
Fig 12b. Unclamped Inductive Waveforms
QG
QGS
QGD
10 V
VG
Charge
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
12V
.2µF
50KΩ
.3µF
VGS
3mA
+
VDS
-
D.U.T.
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
www.irf.com
IRF3205
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
R
-
Q
RG
+
S
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
T
+
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
VDD
Reverse
Recovery
Current
Re-Applied
Voltage
Driver Gate Drive
P.W.
Period
D = P.W.
Period
D.U.T. ISD Waveform
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Body Diode
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
VGS=10V
*
VDD
ISD
www.irf.com
7
IRF3205
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
2.87 (.11 3)
2.62 (.10 3)
10.54 (.415)
10.29 (.405)
3.7 8 (.149 )
3.5 4 (.139 )
- A -
4.69 (.185 )
4.20 (.165 )
- B -
1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
1.15 (.04 5)
M IN
4.06 (.160)
3.55 (.140)
1 2 3
LE A D A S S IG N M E N TS
1 - G A TE
2 - DR A IN
3 - S O U R C E
4 - DR A IN
3X
0.93 (.037)
0.69 (.027)
0.36 (.014) M B A M
3X
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
15.24 (.60 0)
14.84 (.58 4)
14.09 (.55 5)
13.47 (.53 0)
3X
1 .40 (.0 55)
1 .15 (.0 45)
2.54 (.100)
2 X
N O TE S :
1 D IME N S IO N IN G & TO LE R A N C ING P E R A N S I Y 14.5M , 1 982. 3 O U TLIN E C O N F O R MS TO JE D E C O U T LIN E T O -2 20A B .
2 C O N TR O LLING D IM E N S IO N : INC H 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O NO T IN C LU D E B U R R S .
Part Marking Information
TO-220AB
E XA M P L E : TH IS IS A N IR F1 0 10
W ITH A S S E M B L Y
L O T C O D E 9 B 1M
IN TE R N A TION A L
R E C TIFIE R
LO G O
A S S E M B L Y
L O T C O D E
IR F 10 10
9 24 6
9B 1 M
A
P A R T N U M B E R
D A TE C O D E
(YYW W )
YY = YE A R
W W = W E E K
Data and specifications subject to change without notice.
This product has been designed and qualified for the automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.01/01
www.irf.com
8
