TLP521-1_TLP521-4_en_datasheet_071001.pdf-资料库

TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP521−1,TLP521−2,TLP521−4 TLP521−1,TLP521−2,TLP521−4 Unit in mm Programmable Controllers AC/DC−Input Module Solid State Relay The TOSHIBA TLP521−1, −2 and −4 consist of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode. The TLP521−2 offers two isolated channels in an eight lead plastic DIP package, while the TLP521−4 provides four isolated channels in a sixteen plastic DIP package. • Collector−emitter voltage: 55 V (min) • Current transfer ratio: 50% (min) Rank GB: 100% (min) Isolation voltage: 2500 Vrms (min) • • UL recognized made in Japan: UL1577, file No. E67349 made in Thailand: UL1577, file No. E152349 Pin Configurations (top view) TLP521-1 TLP521-2 TLP521-4 1 2 1 : Anode 2 : Cathode 3 : Emitter 4 : Collector 4 3 1 2 3 4 1, 3 : Anode 2, 4 : Cathode 5, 7 : Emitter 6, 8 : Collector 8 7 6 5 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 TOSHIBA Weight: 0.26 g 11−5B2 TOSHIBA Weight: 0.54 g 11−10C4 1, 3, 5, 7 2, 4, 6, 8 9, 11, 13, 15 10, 12, 14, 16 : Anode : Cathode : Emitter : Collector TOSHIBA Weight: 1.1 g 11−20A3 1 2007-10-01

Absolute Maximum Ratings (Ta = 25°C) TLP521−1,TLP521−2,TLP521−4 Characteristic t e D r o t c e D E L Forward current Forward current derating Pulse forward current Reverse voltage Junction temperature Collector−emitter voltage Emitter−collector voltage Collector current Collector power dissipation (1 circuit) Collector power dissipation derating (1 circuit Ta ≥ 25°C) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature Total package power dissipation Total package power dissipation derating (Ta ≥ 25°C) Isolation voltage Symbol IF ΔIF /°C IFP VR Tj VCEO VECO IC PC ΔPC /°C Tj Tstg Topr Tsol PT ΔPT /°C BVS Rating TLP521−1 70 TLP521−2 TLP521−4 50 Unit mA −0.93 (Ta ≥ 50°C) −0.5 (Ta ≥ 25°C) mA /°C 1 (100μ pulse, 100pps) 5 125 55 7 50 125 −55~125 −55~100 260 (10 s) 150 −1.5 250 −2.5 100 −1.0 150 −1.5 A V °C V V mA mW mW /°C °C °C °C °C mW mW /°C 2500 (AC, 1min., R.H.≤ 60%) (Note 1) Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two terminal device: LED side pins shorted together and detector side pins shorted together. Recommended Operating Conditions Characteristic Symbol Supply voltage Forward current Collector current Operating temperature VCC IF IC Topr Min ― ― ― −25 Typ. Max Unit 5 16 1 ― 24 25 10 85 V mA mA °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2007-10-01

Type Classi− fication (*1) A Rank Y Rank GR Rank BL Rank GB A Rank GB TLP521 TLP521−2 TLP521−4 Current Transfer Ratio (%) (IC / IF) IF = 5mA, VCE = 5V, Ta = 25°C Min 50 50 100 200 100 50 100 Max 600 150 300 600 600 600 600 TLP521−1,TLP521−2,TLP521−4 Marking Of Classification Blank, Y, Y■, G, G■, B, B■, GB Y, Y■ G, G■ B, B■ G, G■, B, B■, GB Blank, GR, BL, GB GR, BL, GB *1: Ex. rank GB: TLP521−1 (GB) (Note): Application type name for certification test, please use standard product type name, i.e. TLP521−1 (GB): TLP521−1, TLP521−2 (GB): TLP521−2 3 2007-10-01

Individual Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit TLP521−1,TLP521−2,TLP521−4 Forward voltage Reverse current Capacitance Collector−emitter breakdown voltage Emitter−collector breakdown voltage Collector dark current D E L r o t c e t e D Capacitance (collector to emitter) VF IR CT IF = 10 mA VR = 5 V V = 0, f = 1 MHz V(BR) CEO IC = 0.5 mA V(BR) ECO IE = 0.1 mA ICEO CCE VCE = 24 V VCE = 24 V, Ta = 85°C V = 0, f = 1 MHz Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Current transfer ratio Saturated CTR Collector−emitter saturation voltage IC / IF IF = 5 mA, VCE = 5 V Rank GB IC / IF (sat) IF = 1 mA, VCE = 0.4 V Rank GB VCE (sat) IC = 2.4 mA, IF = 8 mA IC = 0.2 mA, IF = 1 mA Rank GB Isolation Characteristics (Ta = 25°C) 1.0 1.15 1.3 — 30 — — 10 2 10 10 — — — 100 50 — V μA pF V V nA μA pF Typ. Max Unit — — 60 — — 0.2 — 600 600 — — 0.4 — 0.4 % % V — — 55 7 — — — MIn 50 100 — 30 — — — Characteristic Symbol Test Condition Min Typ. Max Unit Capacitance (input to output) Isolation resistance Isolation voltage CS RS BVS VS = 0, f = 1 MHz VS = 500 V, R.H.≤ 60% AC, 1 minute AC, 1 second, in oil DC, 1 minute, in oil — 0.8 — 2500 — — 1011 — 5000 5000 — — — — — pF Ω Vrms Vdc 4 2007-10-01

Switching Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit TLP521−1,TLP521−2,TLP521−4 Rise time Fall time Turn−on time Turn−off time Turn−on time Storage time Turn−off time tr tf ton toff tON ts tOFF VCC = 10 V IC = 2 mA RL = 100Ω RL = 1.9 kΩ (Fig.1) VCC = 5 V, IF = 16 mA — — — — — — — 2 3 3 3 2 15 25 — — — — — — — μs μs Fig.1 : SWITCHING TIME TEST CIRCUIT IF RL VCC VCE IF VCE tON tS VCC 4.5V 0.5V tOFF 5 2007-10-01

t n e r r u c d r a w r o f l e b a w o l l A ) A m ( F I r e w o p r o t c e l l l o c e b a w o l l A ) W m ( C P n o i t i a p s s d i TLP521−1,TLP521−2,TLP521−4 TLP521-1 100 IF – Ta TLP521-2 TLP521-4 100 IF – Ta 80 60 40 20 0 -20 t n e r r u c d r a w r o f l e b a w o ) A m ( F I l l A 0 20 40 60 80 100 Ambient temperature Ta (°C) TLP521-1 PC – Ta 240 200 160 120 80 40 0 -20 0 20 40 60 80 100 Ambient temperature Ta (°C) r e w o p r o t c e l l l o c e b a w o l l A ) W m ( C P n o i t i a p s s d i 80 60 40 20 0 -20 0 20 40 60 80 100 Ambient temperature Ta (°C) TLP521-2 TLP521-4 PC – Ta 120 100 80 60 40 20 0 -20 0 20 40 60 80 100 Ambient temperature Ta (°C) d r a w r o f l e s u p e b a w o l l l A ) A m ( P F I t n e r r u c TLP521-1 3000 IFP – DR Pulse width ≤ 100μs Ta = 25°C TLP521-2 TLP521-4 3000 IFP – DR Pulse width ≤ 100μs Ta = 25°C 1000 500 300 100 50 30 10 3 d r a w r o f l e s u p e b a w o l l l ) A m ( P F I t n e r r u c A 10-3 3 10-2 3 10-1 3 100 Duty cycle ratio DR 1000 500 300 100 50 30 10 3 10-3 3 10-2 3 10-1 3 100 Duty cycle ratio DR 6 2007-10-01

) A m ( F I t n e r r u c d r a w r o F IF – VF Ta=25°C 100 50 30 10 5 3 1 0.5 0.3 TLP521−1,TLP521−2,TLP521−4 ΔVF/ΔTa – IF -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 ) C ° / V m ( t e r u a r e p m e t e g a t l o v d r a w r o F / a T Δ F V Δ t i n e c i f f e o c 0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -0.4 0.1 0.3 ) A m ( P F I t n e r r u c d r a w r o f l e s u P ) A m ( C I t n e r r u c r o t c e l l o C Forward voltage VF (V) IFP – VFP Pulse width ≤10μs Repetitive frequency =100Hz Ta = 25°C 0.4 0.8 1.2 1.6 2.0 2.4 Pulse forward voltage VFP (V) IC – VCE Ta=25°C 50mA 30mA 20mA 15mA 10mA PC(MAX.) IF=5mA 4 2 8 Collector-emitter voltage VCE (V) 6 10 1000 500 300 100 50 30 10 5 3 1 0 80 60 40 20 0 0 1 10 Forward current IF (mA) 3 30 ) A μ ( O E C I t n e r r u c k r a d r o t c e l l o C ) A m ( C I t n e r r u c r o t c e l l o C 101 100 10-1 10-2 10-3 10-4 0 25 20 15 10 5 0 0 ICEO – Ta 10V 5V VCE=24V 40 80 120 160 Ambient temperature Ta (℃) IC – VCE 50mA Ta=25°C 40mA 30mA 20mA 10mA 5mA IF=2mA 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Collector-emitter voltage VCE (V) 7 2007-10-01

) A m ( C I t n e r r u c r o t c e l l o C ) A m ( C I t n e r r u c r o t c e l l o C IC – IF Ta = 25°C VCE=5V VCE=0.4V Sample A Sample B 100 50 30 10 5 3 1 0.5 0.3 0.1 0.05 0.03 0.3 100 50 30 10 5 3 1 0.5 0.3 0.1 -20 1 3 10 30 100 Forward current IF (mA) VCE = 5V IC – Ta 25mA 10mA 5mA 1mA IF = 0.5mA 20 0 Ambient temperature Ta (℃) 60 40 80 100 TLP521−1,TLP521−2,TLP521−4 IC/IF – IF Sample A Sample B Ta = 25°C VCE=5V VCE=0.4V 1 3 10 30 100 Forward current IF (mA) VCE(sat) – Ta IF = 5mA IC = 1mA 500 300 100 50 30 10 5 0.3 0.20 0.16 0.12 0.08 0.04 0 -20 20 0 Ambient temperature Ta (℃) 60 40 80 100 o i t a r r e f s n a r t t n e r r u C ) % ( F I / C I n o i t t a r u a s r e t t i m e - r o t c e l l o C ) V ( ) t a s ( E C V e g a t l o v ) s μ ( e m i t i g n h c t i w S 1000 500 300 100 50 30 10 5 3 1 1 RL – Switching Time Ta = 25°C IF = 16mA VCC= 5V tOFF tS tON 3 10 30 100 300 Load resistance RL (kΩ) 8 2007-10-01

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TLP521-1_TLP521-4_en_datasheet_071001.pdf

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